• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.187-192
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• 2002

Applicability of laser micro welding process to the fabrication of medical devices was investigated. Austenitic stainless steel wire (SUS304) was spot melted and crosswise welded, which is one of the most possible welding process for the fabrication of medical devices, by using a Nd-YAG laser. Effects of welding parameters on the microstructure, tensile strength and corrosion resistance were discussed. In the spot melting, melted metal width decreased with decreasing the input energy and pulse duration. Controlling the laser wave to reduce laser noise which occurred in the early stage of laser irradiation made reasonable welding condition wider in the welding condition of small pulse duration such as 2ms. The microstructure of the melted metal was a cellular dendrite structure and the cell size of the weld metal was about 0.5~3.5 ${\mu}{\textrm}{m}$. Tensile strength increased with the decrease of the melted metal width and reached to a maximum about 660MPa, which is comparable with that for the tempered base metal. Even by immersion test at 318K for 3600ks in quasi biological environment (0.9% NaCl), microstructure of the melted metal and tensile strength hardly changed from those for as melted material. In the crosswise welding, joints morphologies were classified into 3 types by the melting state of lower wire. Fracture load increased with input energy and melted area of lower wire, and reached to a maximum about 80N. However, when input energy was further increased and lower wire was fully melted, fracture load decreased due to the burn out of weld metal.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.1023-1026
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• 2013

위 펄스형 방사선에 노출된 전자장비는 전자소자 내부에서 발생되는 전자-정공쌍(EHP)과 이들이 형성한 순간 광전류로 Upset, Latchup, Burn out 과 같은 다양한 피해를 입게 된다. 이와같은 손상은 군무기체계나 우주항공 장비의 경우 군전력 손실이나 장비의 기능정지로 나타나 국가적으로 큰 손실을 초래할 수 있다. 본 연구에서는 펄스형 감마방사선으로 부터 전자장비/소자를 보호하기 위한 방호기술개발의 일환으로 '방사선 감지 및 제어장치'를 구현하고 대표적으로 군장비에 사용되는 전자소자에 대한 기능검증을 시도하였다. 펄스 방사선에 Latchup 및 Burn out 손상특성을 나타내는 LM118 소자에 개발한 '방사선 감지 및 제어장치'를 적용하여 펄스방사선 조사시험을 수행한 결과 LM118이 안전하게 보호됨을 확인하였다.

• 한국레이저가공학회지
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• 제17권1호
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

• 한국태양에너지학회 논문집
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• 제27권2호
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• pp.19-27
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• 2007

The previous study was conducted to develop an air source multi heat pump system that could be operated with the solar collector and air source heat exchangers as heat source of the system. There is a winter-sowing problems in air source multi heat pump system when the outdoor temperature goes down under freezing point. The winter-sowing problem was solved by adapting R-22 refrigerant as working fluid in the previous study. However, when the system operated at high temperature, another problems are come out such as overheating of the solar collector outlet which lead to the superheat of the compressor inlet of the heat pump system. The condition could deteriorates a compressor in some case. In this study, we installed the anti-superheating devices on the previously developed system. As results of system performance test, COP of the system with anti-superheating technique is 2.4. It is a little improved COP compare to previous study's 2.23. In the results of multi heat source heating system, during operating solar collector, COP is relatively high between $200\;W/m^2$ and $400\;W/m^2$ solar intensity. It is recommended to extend the study on performance optimization with balancing the solar collect and capacity of compressor at higher solar irradiation conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.158-158
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.385-385
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• 2012

Understanding the thermodynamics and structural transformation during the Metal-Insulator Transition (MIT) is critical to better understand the underlying physical origin of phase transition in the vanadiumdioxide ($VO_2$). Here, through the temperature-dependent in-situ high resolutiontransmission electron microscopy (HR-TEM), and systematic electrical transport study, we have shown that the tunable MIT transition of $VO_2$ nanowires is strongly affected by interplay between strain and domain nucleation by ion beam irradiation. Surprsingly, we have also observed that the $VO_2$ rutile (R) metallic phase could form directly in a strain-induced metastable monoclinic (M2) phase. These insights open the door toward more systematic approaches to synthesis for $VO_2$ nanostructures in desired phase and to use for applications including ultrafast optical switching, smart window, metamaterial, resistance RAM and synapse devices.

• 한국재료학회지
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• 제21권2호
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• pp.83-88
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• 2011

Nano-technology is a super microscopic technology to deal with structures of 100 nm or smaller. This technology also involves the developing of $TiO_2$ materials or $TiO_2$ devices within that size. The aim of the present paper is to synthesize $WO_x$ doped nano-$TiO_2$ by the Sonochemistry method and to evaluate the effect of different percentages (0.5-5 wt%) of tungsten oxide load on $TiO_2$ in methylene blue (MB) elimination. The samples were characterized using such different techniques as X-ray diffraction (XRD), TEM, SEM, and UV-VIS absorption spectra. The photo-catalytic activity of tungsten oxide doped $TiO_2$ was evaluated through the elimination of methylene blue using UV-irradiation (315-400nm). The best result was found with 5 wt% $WO_x$ doped $TiO_2$. It has been confirmed that $WO_x-TiO_2$ could be excited by visible light (E<3.2 eV) and that the recombination rate of electrons/holes in $WO_x-TiO_2$ declined due to the existence of $WO_x$ doped in $TiO_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.130-133
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• 2000

The optical characteristics of merocyanine dyes have been investigated widely due to their possible application to the high efficiency photo-electric devices. The optical systems are mostly fabricated using vacuum evaporation. casting and Langmuir-Blodgett method and the arrangement and orientation of dye molecules is one of the most important factors in the study on the optical characteristics. In this study. we fabricated the molecular systems through the LB techniques and investigated the optical characteristics of merocyanine dye LB film using the oscillation characteristics of quartz crystal. It was quite interesting behavior that the resistance and frequency shift at the parallel resonance under the UV irradiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.904-907
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• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area(${\pi}-A$) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. This results suggest that the dendrimers with azobenzene group can be applied to high efficient nano-device of molecular level. And we measured the electrical properties by MIM and STM. The dendrimer with azobenzene group compared trans form and cis form at electrical properties.