• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.149-149
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• 2015

본 연구에서는 Host 물질 Alq3와 Dopant 물질 Ir(piq)3, Zn(BTZ)2를 사용한 ITO/NPB/Alq3+ metal complexes/Alq3/LiF/Al 다층 구조의 PHOLED 소자를 제작하고 특성 변화를 파악하였다. Dopant Ir(piq)3를 발광 영역에 도핑하였을 경우에는 소자의 발광 효율이 감소하였다. 이는 Co-deposition 조건에 따른 분자간의 거리가 충분히 가까워지지 않았기 때문이다. 분자간의 거리가 Co-deposition 조건보다 멀게 되면 Host - Dopant 간의 에너지 전달이 제대로 일어날 수 없게 되며, 결과적으로 Host 영역과 Dopant영역에서 각각 발광을 하게 된다. Dopant Zn(BTZ)2를 도핑하였을 경우에는 Host - Dopant 간의 에너지 전달에 의한 효과로 인해, J-V 특성은 50% 이상, L-V 특성은 20% 이상, L-J 특성은 10% 이상 효율이 증가하였다.

• Bulletin of the Korean Chemical Society
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• v.28 no.10
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• pp.1860-1862
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• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.377-382
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• 2014

We have investigated the effects of spacer layer inserted between blue and red doped emission layers on the emission and efficiency characteristics of phosphorescent OLEDs. N,N'-di-carbazolyl-3,5-benzene (mCP) was used as a host layer. Iridium(III)bis[(4,6-di-fluorophenyl)- pyridinato-N,$C^2$']picolinate (FIrpic) and tris(1-phenyl-isoquinolinato-$C^2$,N)iridium(III) [Ir(piq)3] were used as blue and red dopants, respectively. The emission layer structure was mCP (1-x) nm/mCP:$Ir(piq)_3$ (5 nm, 10%)/mCP (x nm)/mCP:FIrpic (5 nm, 10%). The thickness of mCP spacer layer was varied from 0 to 15 nm. The emission from $Ir(piq)_3$ and the efficiency of the device were dominated by energy transfer from mCP host and FIrpic molecules, and by diffusion of mCP host triplet excitons.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.461-464
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• 2008

We have developed low voltage driving red phosphorescent organic light-emitting devices using a new electron transport layer. $Ir(piq)_3$ and CBP were used as a phosphorescent dopant and an emission host, respectively. The device exhibits a luminance of $1000\;cd/m^2$ at a voltage of 2.8 V. This high luminance at low voltage results from a high electron conduction behavior of the new electron transport layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.34-36
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• 2008

Highly efficient red and green phosphorescent devices comprising a simple bilayer structure are reported. The driving voltage to reach $1000\;cd/m^2$ is 4.5 V in $Bebq_2:\;Ir(piq)_3$ red phosphorescent device. Current and power efficiency values of 9.66 cd/A and 6.90 lm/W in this bi-layered simple structure PHOLEDs are obtained, respectively. While in $Bepp_2:Ir(ppy)_3$ green phosphorescent device, the operating voltage value of 3.3V and current and power efficiencies of 37.89 cd/A and 35.02 lm/W to obtain a luminance of $1000\;cd/m^2$ are noticed, respectively.

• Journal of Information Display
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• v.10 no.2
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• pp.87-91
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• 2009

Highly efficient red phosphorescent OLEDs (PHOLEDs) with a simple, organic, triple-layer structure was developed using the narrow-bandgap fluorescent host material bis(10-hydroxybenzo[h] quinolinato)beryllium complex (Bebq2) and the deep-red dopant tris(1-phenylisoquinoline)iridium (Ir(piq)3). The maximum current and power efficiency values of 12.71 cd/A and 16.02 lm/W, respectively, with an extremely low doping technology of 1%, are demonstrated herein. The results reveal a practical, cost-saving host dopant system for the fabrication of highly efficient PHOLEDs involving the simple structure presented herein, with a reduction of expensive Ir dopants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.76-77
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• 2009

In this paper, We have studied Electron Transport Layer(ETL) in the New Organics applied to Red phosphorescent organic light-emitting devices. The structure of ITO/2-TNATA(15nm)/CBP;$Ir(piq)_3$/DPVBi(30nm)/New ETL(60nm)/LiF(0.5nm)/Al(100nm) has been used, measured changing doping concentration of EML. The results of OLED turn-on voltage at 2.2V, and Maximum Luminance at 2.8V was $1000cd/m^2$. This high luminance at low voltage results from a high electron. conduction of the new electron transport layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.415-417
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• 2009

Color stable and efficient two wavelength white organic light emitting diodes (OLEDs) were fabricated using a iridium(III)[bis(4,6-difluorophenyl)-pyridinato-N,$C^2$'] picolinate (FIrpic) as a blue phosphorescent emitter and a bis(1-phenylisoquinolinato-$C^2$,N)iridium (acetylacetonate) ((piq)$_2$Ir(acac)) as a red phosphorescent emitter. The emitting layers consist of two blue emitting layers and one red emitting layer which is between the two blue layers. The device reaches the peak efficiencies of 7.84 % and 10.3 cd/A at 0.6 mA/$cm^2$. Furthermore, there was little change of EL spectra according to current density change in the device.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.42-45
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• 2009

We report simple structure red phosphorescent devices comprising only single organic layer structure. Maximum current efficiency of 9.44 cd/A and the driving voltage of 5.4 V are obtained in this single layer structure PHOLEDs, respectively. The mixed host system using electron transporting and hole transporting materials doped with $Ir(piq)_3$ provides such high efficiency and reasonable driving voltage. The principal to simplification is the direct charges injection from the metallic electrodes into mixed host materials.