• 대한치과보철학회지
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• 제30권2호
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• pp.135-154
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• 1992

This study was performed to analyze bond strength, the alterations of the interfaces between metal films which are populary used and considered to contribute to the chemical reaction with porcelain, according to constant ion- beam- mixing, and the relation between interfacial chemical reactions and bond strength in metal/porcelain specimens. For this study, three seperate metals : selected-gold, indium and tin were chosen ; each to be bonded to a seperate body porcelain. Bonding occurs when the metal is deposited to the body porcelain using a vacuum evaporator. The vacuum evaporator used $10^{-5}\sim10^{-6}$ Torr vacuum states for the evaporation of various metals (Au, Sn, In). Ion-beam-mixing of the porcelain/metal interfaces caused reactions when the Ar+ was implanted into thin films using a 80 KeV accelerator. These ion-beam-mixed specimens were then compared with an unmixed control group. An analysis of bond strength and ionic changes between the the metal and porcelain was performed by electron spectroscopy of chemical analysis (ESCA) and scratch test. The finding led to the following conclusions : 1. Light microscopic views of the scratch test : The ion-beam-mixed Au/porcelain specimen showed narrower scratched streams than the unmixed specimen. However, the Sn/porcelain, In/porcelain specimens showed no differences in the two conditions. 2. Acoustic emissions in scratch tests : The ion-mixed Au/porcelain, In/porcelain specimens showed signals closer to the metal/porcelain interfaces than unmixed specimens. Conversely, the ion-mixed Sn/porcelain specimen showed more critical signals in superficial portions than unmixed specimens. 3. After ion- beam-mixing, the Au/porcelain specimen showed apparently increased bond strength, and the In/porcelain specimen showed very slightly increased bond strength. However, the Sn/porcelain specimen showed no differences between ion mixed specimen and the unmixed one. 4. ESCA analysis : The ion-beam-mixed Au/porcelain specimen showed a higher peak separated value (4.3eV) than that of the unmixed specimen(3.65eV), the ion-beam-mixed In/porcelain specimen showed a higher peak separated value (9.43eV) than that of the unmixed specimen(7.6eV) and the ion-beam-mixed Sn/porcelain specimen showed a higher peak separated value (8.79eV) than that of the unmixed specimen(8.5eV). 5. Interfacial changes were observed in the ion-mixed Au/porcelain, In/porcelain and Sn/porcelain specimens. Especially, significant interfacial changes were measured in the ion- mixed Sn/porcelain specimen. Tin dioxide(SnO2) and a combination of pure tin and tin dioxide (Sn+SnO2) were produced. 6. In the Au/porcelain specimen, the interfacial chemical reaction showed increased bond strength between gold and porcelain substrate. But, in the In/porcelain, Sn/porcelain specimens, interfacial chemical reactions did not affected the bond strength between metal and porcelain substrate. Especially, bonding strength on the ion mixed Sn/porcelain specimen showed the least amount of difference.

• 한국응용과학기술학회지
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• 제7권1호
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• pp.93-105
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• 1990

Semicarbazone formation of nine monosubstituted benzaldehydes was studied kinetically in 20% methanol buffer solution at 15, 25, 35, and $45^{circ}C$. The rate of p-nitrobenzaldehyde semicarbazone formation is 2.7 times as fast as that of benzaldehyde, while p-hvdroxybenzaldehyde is 3.6 times as slow as that of benzaldehyde. Activation energies for p-chlorobenzaldehyde, benzaldehyde, p-methylbenzaldehyde, p-methoxybenzaldshyde, p-hydroxybenzaldehyde, and p-dimethylaminobenzaldehyde semicarbazone formation are calculated as 5.80, 6.19, 6.57, 7.06, 8.03, and 6.46 kcal/mol respectively. It is concluded from the effect of ionic strength that the reaction is affected by not ions but neutral molecules involving hydrogen bonding between oxygen atom of carbonyl group and hydrogen atom of acid-catalyst, and concerted attack of the necleophilic reagent, free base on carbonyl compound. Also, the effect of solvent composition is small in 20% and 50% methanol (and ethanol) aqueous solutions. The ${\rho}-{\sigma}$ plots for the rates of semicarbazone formation at pH 7.1 show a linear ${\rho}-{\sigma}$ relationship (${\rho}=0.14l$, in contrast to that at pH 2.75 and pH 5.4 corresponding to ${\rho}-{\sigma}$ correlations reparted by Jencks. The rate of semicarbazone formation at pH 5.4 show a relationship which is convex upward, resulting in a break in the curve but at pH 2.75, slight difference from a linear relationship. As a result of studying citric acid catalysis, second-order rate constants increase linearly with citric acid concentration and show a 2 times increase as the catalyst concentration is varied from 0.025 to 0.1 mol/1 at pH 2,9, but slight increase at pH 5.3. The rate-determining step is addition below pH 5 but is dehydration between pH 5 and 7. Conclusively, the rate-determining step of the reaction changes from dehydration to addition in respect to hydrogen ion activity near pH 5. The ortho: para rate ratio of the hydroxybenzaldehydes for semicarbazone formation is about 17 at $15^{\circ}C$. It is concluded that the results constitute strong evidence in favor of greater stabilization of p- than o-hydroxybenzaldehyde by substituent which donate electrons by resonance and is due to hydrogen bonding between the carbon-bound hydrogen of the-CHO group and the oxygen atom of the substituent.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국재료학회지
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• 제19권2호
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• 한국염색가공학회지
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• 제20권6호
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• pp.42-50
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• 2008

The objective of this study is to investigate the efficacy of pomegranate hull colorant as a natural hair coloring dye. The extract of pomegranate hull was concentrated and freeze-dried to get colorant powder. Effect of dyeing condition and mordanting on the dye uptake of hair by using Al, Fe, Cu, Cr, Sn compounds, color change and colorfastness were explored. In addition, tensile strength was measured and the surface of the hair was observed. Dye uptake of hair measured by K/S value (400 nm) indicated that ionic bonding seems to be involved in the sorption of pomegranate colorant to hair. Maximum sorption was obtained at pH 3.5 and the concentration of 50% (on the weight of hair, o.w.h.). Acidic dyeing condition (pH $3.5{\sim}5.0$) showed yellow color however alkaline dyeing condition (pH $7{\sim}11$) gave reddish yellow color. Pomegranate hull colorant produced greyish brown color on hair and the hair mordanted with Fe showed dark brown color. Mordants except Fe did not increase dye uptake significantly. Mordants except Cu increased light fastness and mordants except Cr increased washing fastness level slightly. According to SEM observation and the tensile strength retention measurement, the mordant dyed hair gave more damage to hair by ultraviolet light and washing than the hair dyed without mordanting. Experimental results of K/S value and colorfastness(light and washing) supported that pomegranate hull colorant without mordanting can be used as a semi-permanent natural hair coloring dye.

• 한국정보통신학회논문지
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• 제5권6호
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• pp.1136-1142
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• 2001

$Zn_xSr_{1-x}S$ 박막을 sputtering법에 의해 제작하여 결정구조, 결합상태, 광학적 특성 등의 분석에 의해 고용체 유무를 판단하고 유전체 이론과 비교.검토하였다. 실험 결과 $0.86~0.93{\leq}x{\leq}1$에서 zincblende구조, $0{\leq}x{\leq}0.29$ 범위에서 rocksalt 구조의 고용체로 되었으며, 이들 영역에서는 격자정수, 결합에너지 및 흡수단은 조성에 따라 거의 직선적으로 변화했다. 상분리 영역을 포함한 miscibility gap은 $0.3{\leq}x{\leq}0.86~0.91$범위에서 존재하고 이 영역에서의 격자정수, 결합에너지 및 흡수단은 경계 조성의 값으로 일정했다. 상전이에 관한 실험결과는 Phillips의 유전이론에 기초한 이온성과 일치하였다.

• 한국염색가공학회지
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• 제17권2호
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• pp.10-18
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• 2005

Silk fabrics mordanted with $Fe^{2+},\;Ni^{2+},\;and\;Cu^{2+}$ were dyed with the aqueous extract of Cassia tora L. seed which was known to include water soluble colorant kaempferol, one of flavonol compounds. Kaempferol can react with free radicals and chelate transition metal ions, which is thought to catalyze processes leading to the appearance of free radicals and have antioxidant activity. In relation to the coordinating and chelating mechanism of the ions with the silk protein and kaempferol, reasonable conclusions should be made on the colorant uptake and the water fastness of the fabric. The amount of the colorant on the fabric was in the order of $Fe^{2+}>Ni^{2+}>Cu^{2+}$. In case of dyeing through coordinaiton bonds between transition metal ions and silk protein and colorants, it was thought that the ions with the smaller secondary hydration shell, the higher preference to the atoms of the ligand coordinated, and the suitable bonding stability for the substitution of primarily hydrated water molecules for colorants led to the higher colorant uptake. The water fastnsess of the fabric was in the order of $Fe^{2+}>Cu^{2+}>Ni^{2+}$. It should be reasonable to choose transition metal ions with weak and strong tendency to the ionic and the coordination bond, respectively, to the carboxylate anion of the silk protein. Although further research needs to be done, the conclusions above may be generally applied to the natural dyeing through the coordination bond mechanism between transition metal ions and colorants and substrates.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.156-156
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• 2017

In this work, analysis of biocompatible TiO2 oxide multilayer by the XPS depth profiling was researched. the manufacture of the TiO2 barrier-type multilayer was accurately performed in a mixed electrolyte containing HAp, Pd, and Ag nanoparticles. The temperature of the solution was kept at approximatively $32^{\circ}C$ and was regularly rotated by a magnetic stirring rod in order to increase the ionic diffusion rate. The manufactured specimens were carefully analyzed by XPS depth profile to investigate the result of chemical bonding behaviors. From the analysis of chemical states of the TiO2 oxide multilayer using XPS, the peaks are showed with the typical signal of Ti oxide at 459.1 eV and 464.8 eV, due to Ti 2p(3/2) and Ti 2p(1/2), respectively. The Pd-3d peak was split into Pd-3d(5/2) and Pd-3d(3/2)peaks, and shows two bands at 334.7 and 339.9 eV for Pd-3d3 and Pd-3d5, respectively. Also, the peaks of Ag-3d have been investigated. The chemical states consisted of the O-1s, P-2p, and Ti-2p were identified in the forms of PO42- and PO43-. Based on the results of the chemical states, the chemical elements into the TiO2 oxide multilayer were also inferred to be penetrated from the electrolyte during anodic process.The structure characterization of the modified surface were performed by using FE-SEM, and from the result of biological evaluation in simulated body fluid(SBF), the biocompatibility of TiO2 oxide multilayer was effective for bioactive property.

• 한국재료학회지
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• 제23권10호
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• pp.580-585
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• 2013

To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.

• 한국식품영양과학회지
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• 제46권5호
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• pp.653-658
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• 2017

본 연구에서는 동적광산란법을 이용하여 아밀로즈 함량과 용매 조건에 따른 전분 분자 구조 변화를 규명하였다. 분자량이 다른 여러 가지 덱스트란 표준물질을 이용하여 동적광산란법의 정확성을 검증하였으며, 이를 전분에 적용해본 결과 아밀로즈 함량에 따른 전분 분자의 $D_h$ 변화를 규명할 수 있었고 아밀로즈 함량이 높아질수록 전분 분자의 $D_h$ 값이 증가하였다. 또한, 용매 조건에 따른 전분 분자의 $D_h$ 변화를 동적광산란법으로 규명할 수 있었으며, NaCl의 경우 농도가 높아질수록 아밀로펙틴의 $D_h$가 증가했지만, 아밀로즈의 $D_h$는 urea에 더 큰 영향을 받는 것으로 생각된다. 1-Butanol의 경우 전분 분자의 $D_h$를 증가시켰지만 주목할 만한 경향은 관찰하지 못하였다. 또한, 전분의 아밀로즈 함량과 전분 분자의 $D_h$는 유의적인 상관관계를 보였으며, 이를 활용할 경우 전분의 아밀로즈 함량을 예측하는 데 도움이 될 수 있을 것이라고 기대한다.