• 한국진공학회:학술대회논문집
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• 한국진공학회 1993년도 제5회 학술발표회 논문개요집
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• pp.86-86
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• 1993

• 한국광학회지
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• 제13권3호
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• pp.204-208
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• 2002

본 논문에서는 ITO박막의 면저항과 투과율의 최적 상태를 얻기 위해 이온총에 주입된 Ar:O$_2$혼합비율과 이온빔 발산 각안으로 도입된 $O_2$에 따른 변화를 연구하였다. 기판은 이온빔 발산 각 외부에 위치시켰고, 박막은 상온에서 전자빔으로 증발시킨 ITO와 이온 mixing하여 제작하였다. XRD 측정 결과, 상온에서 제작된 ITO 박막은 모두 비정질이었다. 3$\times$$10^{-5}$ Torr의 산소 분위기에서 이온총에 주입된 Ar:O$_2$비율이 40:60일 때 85%로 가장 높은 투과율을 보였고, 1$\times$$10^{-5}$ Torr에서 Ar:O$_2$비율이 40:60일 때 132 $\Omega$/$\square$ 의 가장 낮은 면 저항을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• 한국진공학회지
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• 제12권S1호
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• pp.7-9
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• 2003

Solid-state reactions in Ni/Si multilayered films (MLF) with an overall stoichiometry of $Ni_2Si$, NiSi and $NiSi_2$, induced by ion-beam mixing (IBM) and thermal annealing, were studied by using spectroscopic ellipsometry and magneto-optical spectroscopy as well as x-ray diffraction (XRD). The mixing was performed with Ar+ ions of an energy of 80 keV and a dose of $1.5 x\times10^{16}$ $Ar^+$/$\textrm{cm}^2$. It was shown that the IBM induces structural changes in the Ni/Si MLF, which cannot be detected by XRD but are confidently recognized by the optical method. A thermal annealing at 673 K of the Ni/Si MLF with an overall stoichiometry of NiSi and $NiSi_2$ causes formation of the first η -NiSi phase. The first trace for $NiSi_2$ phase on the background of NiSi one was detected by XRD after an annealing at 1073 K while, according to the optical results, $NiSi_2$ turns out be the dominant phase for the annealed Ni/Si MLF with an overall stoichiometry of $NiSi_2$.

• 한국표면공학회지
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• 제24권3호
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• pp.137-143
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• 1991

The relation between the ion irradiation induced grain growth and the basic parameters sinvolved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with nuclear energy deposition and thermodynamic properties such as cohesive energy ( Hc) and heat of mixing ( Hm). A model for the grain growth based on the thermal spike induced atomic migration was developed and applied to interpret experimental results.

• 한국진공학회지
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• 제4권S2호
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• pp.148-155
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• 1995

(1) The metastable crystalline(MX) phases formed by ion mixing are classified into 5 types, i.e. the super-saturated solid solutions and the enlarged HCP-I phases reported earlier, and the newly observed FCC-I phases in hcp-based alloys, The FCC-ll and HCP-ll phases in bcc-based alloys. The growth kinetics of the MX phases is discussed. (2) The interfacial free energy in the multilayered films was found to play an important role in ion beam mixing(IM) induced amorphization. By adding sufficient interfaces, amorphous alloys were obtained even in the systems with rather positive heat of formation. (3) Gibbs free energy diagrams of some representative systems were constructed, by calculating the free energy curves of all the competing phases. Steady-state thermal annealing was conducted and the results confirmed the relevance of the constructed diagrams, which were inturn employed to interpret the MX phase formation as well as the glass forming ability upon IM in the binary metal systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 제21회 학술발표회 초록집
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• pp.142-142
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• 2001

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
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• pp.53-54
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• 1994

초정밀 프레스 금형의 주요소재인 SKD 11 소재의 성능향상을 위한 저온표면 경화기술개발을 위해 dynamic ion beam mixing 법을 이용하여 TiN 박막합성 공정 및 내마모 특성에 관해 연구하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.84-84
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• 1993

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.179-179
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• 2002