• 대한화장품학회:학술대회논문집
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• 대한화장품학회 2003년도 IFSCC Conference Proceeding Book II
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• pp.405-406
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• 2003

DNA is known as the genetic material in cells. Various environmental factors can cause DNA damages. One of them is sunlight. The life on earth depends on the sunlight, but on the other hand, the UV light in sunlight can cause skin DNA damages. When these damages are not fully repaired before replication, they can lead to mutations of oncogenes and tumour suppressor gene and result in photo carcinogenesis, in the end, skin cancer.(omitted)

• 멤브레인
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• 제26권4호
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• pp.310-317
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• 2016

리튬이온 이차전지는 리튬이온이 이동하면서 전기화학적 충방전사이클을 완성하는 에너지변환장치를 의미한다. 리튬이온 이차전지는 높은 에너지밀도와 낮은 자가방전률, 상대적으로 긴 수명주기 등 다양한 장점을 갖는다. 최근 전기차 수요증가는 고용량 리튬이온 이차전지 개발을 촉진하고 있으나 음극에서의 dendrite 형성으로 인한 전기적 단락 현상과 전지 폭발 문제와 같은 심각한 안전문제를 야기한다. 또한, 리튬이온 이차전지 구동시 상승된 온도에서 폴리올레핀계열(예 : 폴리에틸렌과 폴리프로필렌) 격리막의 열수축 문제가 발생한다. 이와 같이 낮은 열 안정성은 리튬이온 이차전지의 성능과 수명의 감소로 이어진다. 본 연구에서는 폴리올레핀계열 함침격리막 제조를 위한 중요한 소재로서 술폰화 폴리아릴렌에테르술폰 랜덤 공중합체를 사용하였으며, 제조된 격리막을 이용하여 dendrite 형성과 관련된 금속이온 흡착 능력과 리튬이온전도성, 열적 내구성이 평가되었다.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.188-191
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• 2012

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

• 천문학회보
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• 제42권2호
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• pp.65.4-65.4
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• 2017

The laboratory astrophysics is a new emerging field of basic sciences, and has tremendous discovery potentials. The laboratory astrophysics investigates the basic physical phenomena in the astrophysical objects in controlled and reproducible manners, which has become possible only recently due to the newly-established intense photon and ion beam facilities worldwide. In this presentation, we will introduce several promising ideas for laboratory astrophysics programs that might be readily incorporated in the Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL). For example, precise spectroscopic measurements using Electron Beam Ion Trap (EBIT) and intense X-ray photons from the PAL-XFEL can be performed to explore the fundamental processes in high energy X-ray phenomena in the visible universe. Besides, in many violent astrophysical events, the energy density of matter becomes so high that the traditional plasma physics description becomes inapplicable. Generation of such high-energy density states can be also be achieved by using the intense photon beams available from the PAL-XFEL.

• 한국진공학회지
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• 제1권1호
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• pp.212-222
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• 1992

To use polycrystalline Si Thin Film Transistor (poly-Si TFT) in high density SRAM instead of High Load Resistor (HLR), TFT is needed to show good electrical characteristics such as large carrier mobility, low leakage current, high driver current and low subthreshold swing. To satisfy these electrical characteristics, the trap state density must be reduced in the channel poly. Technological issues pertinent to the channel poly fabrication process are investigated and discussed. They are solid phase growth (SPG), Si-ion implantation, laser annealing and hydrogenation. The electrical properties of several CVD oxides used as the gate oxide of TFT are compared. The dependence of the electrical characteristics of TFT on source-drain ion-implantation dose, drain offset length and dopant lateral diffusion are also described.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.26-26
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• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• 해양환경안전학회지
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• 제14권4호
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• pp.267-273
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• 2008

본 연구는 영산강유역 농공폐수처리장 방류수중의 유기오염물질 분포를 관찰하였다. 시료채취 지점은 영산강 유역에 존재하는 4지점의 농공단지 폐수처리장을 선정하였다. 본 연구에서 GC-Ion trap MS로 300종의 일반적인 화학물질을 ppt수준에서 검출할 수 있는 방법을 이용하여 분석하였다. 농공폐수처리방류수에서 검출된 주요 유기오염물질은 농약류, CH구조의 방향족, CHO구조의 프탈레이트류, 그리고 CHO(N) 구조의 아로메틱 아민류였다. 또한 diethylphthalate를 포함한 17종의 내분비계장애물질이 검출되었다. XTT assay를 이용한 세포독성 결과는 TV로 나타냈으며, 그들의 세포독성은 A지점에서 27.2, D지점에서 24.4로 가장 높게 나타났다. 한편 화학적 분석 결과와 생물학적 독성도와는 일치하지 않는 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• Mass Spectrometry Letters
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• 제10권2호
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• pp.50-55
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• 2019

The fragmentation statistics of ion trap CID (Collision-Induced Dissociation) spectra using 87,661 tandem mass spectra of doubly charged tryptic peptides are analyzed here. In contrast to the usual method of using intensity information, the frequency of occurrence of fragment ions, with respect to the position of the cleavage site and the residues at these sites is studied in this paper. The analysis shows that the frequency of occurrence of fragment ion peaks is more towards the middle of the peptide than its ends. It was noted that amino acid with an aromatic and basic side chain at N- & C- terminal end of the peptide stimulates more peaks at the lower end of the spectrum. The residue pair effect was shown when the amide bond occurs between acidic and basic residues. The fragmentation at these sites (D/E-H/R/K) stimulates the generation of the y-ion peak. Also, the cleavage site H-H/R/K stimulates the generation of b-ions. K-P environment in the peptide sequence has more tendency to generate y-ions than b-ions. Statistical analysis helps in the visualization of the CID fragmentation pattern. Cleavage pattern along the length of the peptide and the residue pair effects, enhance the knowledge of fragmentation behavior, which is useful for the better interpretation of tandem mass spectra.