• 제목/요약/키워드: Ion suppression

검색결과 83건 처리시간 0.023초

Ultra-fast Generic LC-MS/MS Method for High-Throughput Quantification in Drug Discovery

  • Kim, So-Hee;Yoo, Hye Hyun;Cha, Eun-Ju;Jeong, Eun Sook;Kim, Ho Jun;Kim, Dong Hyun;Lee, Jaeick
    • Mass Spectrometry Letters
    • /
    • 제4권3호
    • /
    • pp.47-50
    • /
    • 2013
  • An ultra-fast generic LC-MS/MS method was developed for high-throughput quantification of discovery pharmacokinetic (PK) samples and its reliability was verified. The method involves a simple protein precipitation for sample preparation and the analysis by ultra-fast generic LC-MS/MS with the ballistic gradient program and selected reaction monitoring (SRM) mode. Approximately 290 new chemical entities (NCEs) (over 10,000 samples) from 5 therapeutic programs were analyzed. The calibration curves showed good linearity in the concentration range of 1, 2 or 5 to 2000 ng/mL. No significant ion suppression was observed in the elution region of all the NCEs. When approximately 300 plasma samples were continuously analyzed, the peak area of internal standard was constant and reproducible. In the repeated analysis of samples, the plasma concentrations and the area under the curve (AUC) were consistent with the results from the first analysis. These results showed that the present ultra-fast generic LC-MS/MS method is reliable in terms of selectivity, sensitivity, and reproducibility and could be useful for high-throughput quantification and other bioanalysis in drug discovery.

Ethanol inhibits Kv7.2/7.3 channel open probability by reducing the PI(4,5)P2 sensitivity of Kv7.2 subunit

  • Kim, Kwon-Woo;Suh, Byung-Chang
    • BMB Reports
    • /
    • 제54권6호
    • /
    • pp.311-316
    • /
    • 2021
  • Ethanol often causes critical health problems by altering the neuronal activities of the central and peripheral nerve systems. One of the cellular targets of ethanol is the plasma membrane proteins including ion channels and receptors. Recently, we reported that ethanol elevates membrane excitability in sympathetic neurons by inhibiting Kv7.2/7.3 channels in a cell type-specific manner. Even though our studies revealed that the inhibitory effects of ethanol on the Kv7.2/7.3 channel was diminished by the increase of plasma membrane phosphatidylinositol 4,5-bisphosphate (PI(4,5)P2), the molecular mechanism of ethanol on Kv7.2/7.3 channel inhibition remains unclear. By investigating the kinetics of Kv7.2/7.3 current in high K+ solution, we found that ethanol inhibited Kv7.2/7.3 channels through a mechanism distinct from that of tetraethylammonium (TEA) which enters into the pore and blocks the gate of the channels. Using a non-stationary noise analysis (NSNA), we demonstrated that the inhibitory effect of ethanol is the result of reduction of open probability (PO) of the Kv7.2/7.3 channel, but not of a single channel current (i) or channel number (N). Finally, ethanol selectively facilitated the kinetics of Kv7.2 current suppression by voltage-sensing phosphatase (VSP)-induced PI(4,5)P2 depletion, while it slowed down Kv7.2 current recovery from the VSP-induced inhibition. Together our results suggest that ethanol regulates neuronal activity through the reduction of open probability and PI(4,5)P2 sensitivity of Kv7.2/7.3 channels.

Mitigating Metal-dissolution in a High-voltage 15 wt% Si-Graphite‖Li-rich Layered Oxide Full-Cell Utilizing Fluorinated Dual-Additives

  • Kim, Jaeram;Kwak, Sehyun;Pham, Hieu Quang;Jo, Hyuntak;Jeon, Do-Man;Yang, A-Reum;Song, Seung-Wan
    • Journal of Electrochemical Science and Technology
    • /
    • 제13권2호
    • /
    • pp.269-278
    • /
    • 2022
  • Utilization of high-voltage electrolyte additive(s) at a small fraction is a cost-effective strategy for a good solid electrolyte interphase (SEI) formation and performance improvement of a lithium-rich layered oxide-based high-energy lithium-ion cell by avoiding the occurrence of metal-dissolution that is one of the failure modes. To mitigate metal-dissolution, we explored fluorinated dual-additives of fluoroethylene carbonate (FEC) and di(2,2,2-trifluoroethyl)carbonate (DFDEC) for building-up of a good SEI in a 4.7 V full-cell that consists of high-capacity silicon-graphite composite (15 wt% Si/C/CF/C-graphite) anode and Li1.13Mn0.463Ni0.203Co0.203O2 (LMNC) cathode. The full-cell including optimum fractions of dual-additives shows increased capacity to 228 mAhg-1 at 0.2C and improved performance from the one in the base electrolyte. Surface analysis results find that the SEI stabilization of LMNC cathode induced by dual-additives leads to a suppression of soluble Mn2+-O formation at cathode surface, mitigating metal-dissolution event and crack formation as well as structural degradation. The SEI and structure of Si/C/CF/C-graphite anode is also stabilized by the effects of dual-additives, contributing to performance improvement. The data give insight into a basic understanding of cathode-electrolyte and anode-electrolyte interfacial processes and cathode-anode interaction that are critical factors affecting full-cell performance.

상수, 공업용수, 및 하천수를 활용한 균일한 실리카 나노입자 합성 및 전기감응형 스마트유체로의 응용 (Synthesis of Uniform Silica Nanoparticles using Tap, Industrial, and Stream water and Their Application to Electro-responsive Smart Fluid System)

  • 김하영;제갈석;이능히;사민기;김동현;김민상;김지원;윤창민
    • 유기물자원화
    • /
    • 제31권1호
    • /
    • pp.47-56
    • /
    • 2023
  • 본 연구에서는 증류수를 사용하지 않고 상수, 공업용수 및 하천수를 활용하여 균일한 실리카 나노입자를 성공적으로 제조하는 방법에 대해 제시하였다. 또한, 제조된 실리카 나노입자들은 전기감응형 스마트유체의 분산 물질로 적용하였다. 상세히는, 다양한 종류의 물을 사용하여 500-700nm 사이즈의 실리카 나노입자를 한 번의 실험으로 대량 제조(약 12.0g) 하였으며 증류수를 활용하여 합성한 750nm 사이즈의 실리카 나노입자와 동일한 형태학적 화학적 특성을 가지고 있음을 확인하였다. 다양한 물을 사용하여 제조한 실리카 나노입자의 사이즈는 이온전도도에 따라 변화하였다. 이온전도도가 높으면 높을수록 제조된 실리카 나노입자의 크기가 작아짐을 확인할 수 있었고, 이는 이온들이 실리카 나노입자의 성장을 억제하기 때문이다. 또한, 제조한 실리카 나노입자들을 전기감응형 스마트유체로 응용하였다. 그 결과, 상수, 공업용수 및 하천수를 활용하여 제조한 실리카 나노입자가 증류수를 활용하여 합성한 실리카 나노입자 대비 높은 전단응력을 나타냄을 확인할 수 있었고, 이는 작은 사이즈의 실리카 나노입자가 전기장 하에서 더 강한 사슬 구조를 형성하기 때문이다. 결론적으로, 본 연구를 통해 다양한 물을 증류수와 같이 정제하지 않고 사용하여 실리카 나노입자를 성공적으로 제조할 수 있음을 확인하였고, 해당 입자들이 전기감응형 스마트유체 응용에서 우수한 성능을 나타냄을 확인할 수 있었다.

New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
    • /
    • pp.100-101
    • /
    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

  • PDF

Al2O3 High Dense Single Layer Gas Barrier by Neutral Beam Assisted Sputtering (NBAS) Process

  • 장윤성;홍문표
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
    • /
    • pp.157-157
    • /
    • 2015
  • Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

  • PDF

코발트 염을 이용한 금어초 절화의 수확 후 굴지성 반응 억제 (A Protocol of Cobalt(II)-Based Chemical Treatment for Suppressing Post-harvest Gravitropic Response of Snapdragon (Antirrhinum majus L .) Flower Stalks)

  • 손은규;김용삼;김동헌;정진
    • Applied Biological Chemistry
    • /
    • 제42권4호
    • /
    • pp.288-292
    • /
    • 1999
  • 화경이 긴 절화 등에서 문제가 되는 절화의 수확 후 저장 및 수송기간 중 굴지성 반응을 억제하기 위한 실용적 방법을 개발하고자 본 연구를 수행하였다. 에틸렌 합성 저해제인 코발트 염이 효과적으로 굴지성 반응을 억제한다는 저자들의 이전 보고에 의거하여 본 연구에서는 코발트 염을 주성분으로 하는 굴지성 반응억제제와 그 처리법을 확립하기 위한 일련의 실험을 수행하였다. 굴지성 반응 억제제에 첨가되는 계면활성제로는 수종의 계면활성제를 대상으로 조사한 굴지성 반응 억제효과 및 절화품질에 미치는 영향에 근거하여 Tween-40이 선발되었으며 처리농도로는 0.05%가 적절하다는 것을 확인하였다 코발트염의 음이온 종류에 따른 절화 굴지성 반응 억제효과를 검정한 결과 $CO(NO_3)_2$가 비교적 절화의 품질을 저하시키지 않고 굴지성 반응 억제효과를 증가시키는 것으로 나타났다. 굴지성 반응억제제 처리방법을 개선하기 위하여 절화의 굴지성 반응부위를 직접 억제액에 담그는 침지법과 수평으로 놓인 절화의 굴지성 반응부위에 분무하는 방법등을 시험하였으며 그 결과 처리방법이 간편하고 노동력의 투여가 적은 분무법이 침지법에 비하여 처리효과가 전혀 뒤지지 않았다. 10 mM $CO(NO_3)_2$와 0.05% Tween-40으로 이루어진 억제제를 처리한 금어초 절화의 굴지성 반응 속도를 측정한 결과, 억제제 처리효과는 절화의 굴지성 반응 지연효과임을 관찰할 수 있었고, 절화를 $10^{\circ}C$정도의 저온에서 보관하는 저온처리와 병행하였을때 이러한 지연효과를 증진시킬 수 있음을 확인하였다.

  • PDF

Inhibition of Transient Receptor Potential Melastain 7 Enhances Apoptosis Induced by TRAIL in PC-3 cells

  • Lin, Chang-Ming;Ma, Ji-Min;Zhang, Li;Hao, Zong-Yao;Zhou, Jun;Zhou, Zhen-Yu;Shi, Hao-Qiang;Zhang, Yi-Fei;Shao, En-Ming;Liang, Chao-Zhao
    • Asian Pacific Journal of Cancer Prevention
    • /
    • 제16권10호
    • /
    • pp.4469-4475
    • /
    • 2015
  • Transient receptor potential melastain 7 (TRPM7) is a bifunctional protein with dual structure of both ion channel and protein kinase, participating in a wide variety of diseases including cancer. Recent researches have reported the mechanism of TRPM7 in human cancers. However, the correlation between TRPM7 and prostate cancer (PCa) has not been well studied. The objective of this study was to investigate the potential the role of TRPM7 in the apoptosis of PC-3 cells, which is the key cell of advanced metastatic PCa. In this study, we demonstrated the influence and potential function of TRPM7 on the PC-3 cells apoptosis induced by TNF-related apoptosis inducing-ligand (TRAIL). The study also found a novel up-regulated expression of TRPM7 in PC-3 cells after treating with TRAIL. Suppression of TRPM7 by TRPM7 non-specific inhibitors ($Gd^{3+}$ or 2-aminoethoxy diphenylborate (2-APB) ) not only markedly eliminated TRPM7 expression level, but also increased the apoptosis of TRAIL-treated PC-3 cells, which may be regulated by the phosphatidylinositol 3-kinase/protein kinase B (PI3K/AKT) signaling pathway accompany with up-regulated expression of cleaved Caspase-3, (TRAIL-receptor 1, death receptors 4) DR4, and (TRAIL-receptor 2, death receptors 5) DR5. Taken together, our findings strongly suggested that TRPM7 was involved in the apoptosis of PC-3 cells induced by TRAIL, indicating that TRPM7 may be applied as a therapeutic target for PCa.

Ti 첨가 Al2O3 코팅층의 두께와 열처리 조건이 LiCoO2 양극 박막의 미세구조와 전기화학적 특성에 미치는 영향 (Effect of Ti-Doped Al2O3 Coating Thickness and Annealed Condition on Microstructure and Electrochemical Properties of LiCoO2 Thin-Film Cathode)

  • 최지애;이성래;조원일;조병원
    • 한국재료학회지
    • /
    • 제17권8호
    • /
    • pp.447-451
    • /
    • 2007
  • We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

1018 nm 파장의 고출력 Yb 광섬유 레이저 (High-power Operation of a Yb Fiber Laser at 1018 nm)

  • 오예진;박혜미;박종선;박은지;김진필;정훈;김지원;김태형;정성묵;김기혁;양환석
    • 한국광학회지
    • /
    • 제32권5호
    • /
    • pp.209-214
    • /
    • 2021
  • 본 논문에서는 단파장 영역인 1018 nm에서 최고 출력 626 W를 가진 고출력 이터븀(ytterbium, Yb) 첨가 광섬유 레이저에 대해 보고한다. Yb 광섬유 레이저에서 이득률이 낮은 단파장 영역인 1018 nm에서 레이저를 발진시키기 위한 조건을 이론적으로 조사해보고, 광섬유 끝 단단면 조건에 따른 되먹임 신호를 측정하여 안정적인 레이저 발진 조건에 대하여 연구하였다. 그 결과를 바탕으로 제작한 단일 공진기 구조의 Yb 광섬유 레이저 시스템으로부터 729 W의 펌프 출력에서 최고 출력 626 W의 1018 nm 파장 레이저 출력을 안정적으로 얻을 수 있었으며 그때 기울기 효율은 86.6%로 측정되었다. 본 연구에서 얻은 1018 nm 파장의 Yb 광섬유 레이저 결과는 지금까지 국내에서 보고된 1030 nm 이하 단파장에서 발진된 Yb 광섬유 레이저 출력 중 가장 높은 출력이며, 세계적으로도 상용 Yb 광섬유와 광부품을 사용한 결과 중 가장 높은 출력에 해당된다. 그리고 향후 더 높은 출력을 얻기 위한 방법에 대해 논의하고자 한다.