• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.520-527
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• 2006

A realistic surface model is presented for prediction of various surface phenomena such as polymer deposition, suppression and sputtering as a function of incidence ion energy in high density fluorocarbon plasmas. This model followed ion enhanced etching model using the "well-mixed" or continuous stirred tank reactor (CSTR) assumption to the surface reaction zone. In this work, we suggested ion enhanced polymer formation and decomposition mechanisms that can capture $SiO_2$ etching through a steady-state polymer film on $SiO_2$ under the suppression regime. These mechanisms were derived based on experimental data and molecular dynamic simulation results from literatures. The model coefficients are obtained from fits to available beam and plasma experimental data. In order to show validity of our model, we compared the model results to high density fluorocarbon plasma etching data.

• Mass Spectrometry Letters
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• v.7 no.4
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• pp.111-115
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• 2016

Glycerol was identified and isolated from endogenous interferences during analysis of human urine using high-resolution mass spectrometry (HRMS) for doping control. Urinary sample preparation was simple; the samples were diluted with an organic solvent and then analyzed using a liquid chromatography-mass spectrometry ("dilute and shoot" method). Although the interfering ion peaks were observed at the similar retention time of glycerol, the inference could be identified by isolation with HRMS and further investigation. Thus, creatinine was identified as the endogenous interference for glycerol analysis and it also caused ion suppression resulting in the decrease of glycerol signal. This study reports the first identification and efficient isolation of endogenous interferences in human urine for "dilute and shoot" method. The information about ion suppression could be novel to prevent overestimation or a false result for antidoping analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.237-242
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• 2003

투어멀린(Tourmaline)은 비대칭 쌍극자를 가진 유극성 결정체로 광물 중에서 영구적으로 전기분극 특성을 띄고 있는 유일한 물질로써, 일명 "전기석"이라고 알려져 있다. 자체의 미약 전류(약 0,06mA)와 함께 음이온 및 원적외선의 발생으로 최근 우리 주변에서 건강과 환경정화를 위한 관심 대상의 투어멀린은 육방정계의 압전성 및 초전성을 띄는 붕규산염으로, 물분자를 만나면 수소($H^+$)와 수산기($OH^-$)로 분해하여 친수기와 소수기를 구분하여 발생하며, $H^+$와 $OH^-$는 각각 $H_2O$와 결합하여 활성이 강한 hydronium ion($H_3O^+$)과 계면활성 작용이 있는 hydroxyl ion($H_3O_2^-$)을 생성한다. 물속에서 불안정한 상태로 존재하는 수산기는 hydroxyl (-)ion을 형성하여 약 알카리성($pH{\sim}7.4$)을 띄고, 물의 클러스터(cluster)를 세분화하는 수질개선 기능과 함께 살균, 항균 및 세균번식억제 효과를 갖는 것으로 확인되었다. 따라서 투어멀린 소결체를 활용하여 그 처리수의 특성조사 및 기능개발과 함께 대장균의 번식억제 작용 및 살균작용과 수질개선 기능 등 유용한 결과의 분석으로부터 다양한 응용성을 확보하였다.

• Journal of the Korean Electrochemical Society
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• v.25 no.3
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• pp.113-118
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• 2022

In this study, the effect of polyethylene glycol (PEG) on Cu electrodeposition was analyzed using cyclic voltammetry. The adsorption of PEG was affected by the specific adsorption of sulfate ion (SO₄^2-) or chloride ion (Cl^-). In SO₄^2--based plating solution, the adsorption of PEG was limited by the adsorbed SO₄^2-. Accordingly, the adsorbed PEG could suppress the electron transfer for Cu electrodeposition, but its effect was not significant. Meanwhile, in the plating solution composed of perchlorate ion (ClO₄^-) which does not specifically adsorb on Cu surface, a strong suppression effect of PEG was observed and it was proportional to the molecular weight of PEG. On the other hand, when Cl^- was specifically adsorbed on Cu surface, the suppression effect of PEG was enhanced because PEG and Cl^- formed an interrelated adsorbate. The synergetic effect of PEG and Cl^- depended on the composition of the plating solution, which means that the synergy between PEG and Cl^- is based on the physical interaction. For example, the hydrophobicity of PEG plays an important role in the interaction, as the suppression effect of PEG derivative having a hydrocarbon tail was further enhanced with the addition of Cl^-.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.188-191
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• 2012

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.346-349
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• 2002

High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.22-27
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• 2013

Detailed study on how the plasma process during the sidewall spacer formation suppresses the formation of silicide is done. In non-patterned wafer test, it is found that both fluorocarbon reactive ion etch (RIE) and TEOS plasma-enhanced deposition processes modify the Si surface so that the silicide reaction is chemically inhibited or suppressed. In order to investigate the cause of the chemical modification, we analyze the elements on the silicon surface through Auger Electron Spectroscopy (AES). From the AES result, it is found that the carbon induces chemical modification which blocks the reaction between silicon and nickel. Thus, protecting the surface from the carbon-containing plasma process prior to nickel deposition appears critical in successful silicide formation.

• Journal of Korean Society of societal Security
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• v.3 no.2
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• pp.65-71
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• 2010

This study was conducted to provide a method for fire suppression in a central area inside the roof of a wooden cultural property using a gas extinguishing apparatus, which is used as one of fire suppression methods with view to preventing valuable wooden properties inherited from ancestors from being destructed by fire. For a wooden property, it is very difficult to suppress fire when combustion spreads to a central area inside its roof, so it is impossible to put out a fire without destructing it. Such a fire fighting apparatus as a sprinkler, etc., installed in modern structures, is very effective, but the possibility of damaging a cultural property is highly probable after installment and operation, which leads to its low adaptability to a wooden property. Thus, the necessity of developing a fire suppress ion apparatus was raised to minimize the said problem and to obtain the desired results, and the need of making a plan on the installment was also raised based on the results of a test whose validity was proven. The central area inside a roof is a traditional - architectural style which is found in Korean wooden structures only, so it is impossible to discover similar cases in foreign countries. For this reason, this study was conducted to verify the effectiveness by developing a fixed fire suppression apparatus designed considering the speed and effectiveness in fire suppression. This study was sequentially carried out in the following steps. First, a frame for this study was made and the specific plan on a fire suppression method was established. Then, a fire suppression apparatus was installed. In the first step, the effectiveness for fire suppression was tested by installing valve open - punched - main water pores, and in the second step, the same effectiveness was tested by valve opened - punched - injection ports. For a wooden property similar to "Sungnyemun"(Gate of Exalted Ceremonies), its central area of the roof decides whether the fire suppression is successful or not, so the opinions on how to put out a fire were presented in this study, and thus the objective data to establish a method on fire suppression in a wooden structure(cultural property) was secured. Lastly, a scientific verification in the effectiveness for fire suppression measures was presented by installing a gas - fixed fire suppression apparatus.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.735-736
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• 1998

Reduction of hot carrier degradation in MOS devices has been one of the most serious concerns for MOS-ULSIs. In this paper, three types of LDD structure for suppression of hot carrier degradation, such as spacer-induced degradation and decrease of performance due to increase of series resistance will be investigated. LDD-nMOSFETs used in this study had three different drain structure. (1) conventional ${\underline{S}}urface$ type ${\underline{L}}DD$(SL), (2) ${\underline{B}}uried$ type ${\underline{L}}DD$(BL), (3) ${\underline{S}}urface$urface ${\underline{I}}mplantation$ type LDD(SI). As a result, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structure.