• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.18-27
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• 1998

Molecular dynamicsinvestigations of ion implantation considering point defect generation were performed with ion energies in the range of ~1keV, Simulation starts perfect diamond cubic lattice site. Stillinger-Weber potential and ZBL potential were used to calculate forces between atoms. We have simulated slowing-down of ion velocity, ion trajectory and coupled-coing between ion and silicon. We also discussed distribution of point defect using rdial distribution function. We found that interstitial produced by ion bombardment mainly formed interstitial cluster.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.1
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• pp.57-61
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• 2006

The research on surface modification technology has been advanced to improve the properties of engineering materials. Ion implantation is a novel surface modification technology that enhances the mechanical, chemical and electrical properties of substrate's surface using accelerated ions. In this research, nitrogen ions were implanted into AC7A aluminum substrates which would be used as molds for rubber molding. The composition of nitrogenion implanted aluminum and distribution of nitrogen ions were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimen was higher than that of untreated specimen. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that implantation of nitrogen ions enhances the mechanical properties of aluminum mold.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.471-478
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• 2002

Vacuum evaporated cadmium sulphide (CdS) thin films were implanted with $Ar^+$ and $N^+$ for different doses. The properties of the ion implanted CdS thin films have been analysed using XRD, optical transmittance spectra, and Raman scattering studies. Formation of Cd metallic clusters were observed in ion implanted films. The band gap of $Ar^+$ doped films decreased from 2.385 eV of the undoped film to 2.28 eV for the maximum doping. In the case of $N^+$ doped film the band gap decreased from 2.385 to 2.301 eV, whereas the absorption coefficient values increased with the increase of implantation dose. On implantation of both types of ions, the Raman peak position appeared at $299\textrm{cm}^{-1}$ and the FWHM changed with the ion dose.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.251-259
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• 2010

We proposed a tail function parameter extraction procedure for the establishment of a robust ion implantation database. We showed that, for the expression of ion implantation profiles, there are many local minimum values set for the third and fourth moment parameters of $\gamma$ and $\beta$ for the Pearson function that comprises the standard dual Pearson and tail functions. We proposed the use of a joined tail function as a mediate function to extract $\gamma$ and $\beta$, and demonstrated that this enables us to extract the parameters uniquely. Other parameters associated with channeling phenomena can also be simply and uniquely extracted by our procedure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.237.1-237.1
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• 2011

Resistivity of GaN has been investigated under the influence of ion implantation. n-type, p-type and also undoped GaN has been used here. A ring shape pattern of Au was fabricated on GaN film by the photolithography technique. H, He and Ar were used for implantation. The ion implantation energy, fluence and post-implant annealing temperature varied in this research. Because of the making barrier in some selected area using ions, the resistivity changed in all the samples with the change of both fluence and energy. At room temperature, the resistivity of n-type GaN has been increased from $1.9{\times}10-2$ to $17.7{\times}10-2\;{\Omega}-cm$. This is high for He ion. But undoped and p-type GaN showed some anomalous character.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.1-12
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• 1997

A new three-dimensional (3D) Monte Carlo ion implantation simulator, TRICSI, has been developed to investigate 3D mask effects in the typical mask structure for ion implantation into crystalline silicon. We present the mask corner and mask size effects of implanted boron range profiles, and also show the calculated damage distributions by applying the modified Kinchin-Pease equation in the single-crystal silicon target. The simulator calculates accurately and efficiently the implanted-boron range profiles under the relatively large implanted area, using a newly developed search algorithm for the collision partner in the single-crystal silicon. All of the typical implant parameters such as dose, tilt and rotation angles, in addition to energy can be used for the 3D simulation of ion implantation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.293-297
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• 1998

The influence of ion implantation on surface properties of polymers was studied. We investigated microhardness, friction, wear and wettablility of polyimide. Energies of 50, 200keV were used with doses range from $1{\times}10^{13} to 1{\times}10^{16} [ions/cm^2]$. The implanted ion species were B, N and Ar. The microhardness of polyimide was increased after implantation for doses of $1{\times}10^{15}\; [ions/cm^2]$. A reduction of the friction coefficient was in most case correlated with a reduction of wear. The contact angles of water for $B^+,N^+$ implanted polyimide decreased from $76^{\circ}C$ to zero, as the fluencies increased at energies of 50 and 200 KeV. However, the contact angle of Ar ion implanted polyimide did not change under ambient room conditions even if the time elapsed. SEM measurement was performed to characterize the modified surface layer.

• Journal of Radiation Industry
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• v.6 no.4
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• pp.323-328
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• 2012

In this study, a facile method to fabricate superhydrophobic surfaces on perfluoroalkoxy (PFA) films using ion implantation was developed. PFA films were implanted at 100 keV with a fluence ranging from $4{\times}10^{16}$ to $7{\times}10^{16}ions\;cm^{-2}$. The surface properties of the implanted films were investigated in terms of their surface morphology, wettability, and chemical composition. As the fluence increased to $6{\times}10^{16}ions\;cm^{-2}$, the surface morphology and surface roughness of the PFA films were dramatically changed. The PFA surface implanted at a fluence of $6{\times}10^{16}ions\;cm^{-2}$ showed a maximum contact angle (CA) of $157.1^{\circ}$, while the control CA of the smooth PFA surface was $103.6^{\circ}$. Thus, the superhydrophobic surface was successfully fabricated by ion implantation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.100-105
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120keV to a total dose range of $1\times 10^{17}$ions/$\textrm{cm}^2$ to $1\times 10^{18}$ions/$\textrm{cm}^2$ at various temperatures between $270^{\circ}C$ and $671^{\circ}C$. The microstructure changes by nitrogen implantation were analyzed by XRD and AES and wear behavior was evaluated by performing ball-on-disc type wear testing at various loads and sliding velocities under unlubricated condition. Nitrogen implantation produced ZrNx nitride above $3\times 10^{17}$ions/$\textrm{cm}^2$ as well as heavy dislocations, which resluted in an increase in microhardness of the implanted surface of up to 1400 $H_k$ from 200 $H_k$ of unimplanted substrate. Hardness was also found to be increased with increasing implantation temperature up to 1760 $H_k$ at $620^{\circ}C$. The wear resistance was greatly improved as total ion dose and implantation temperature increased. The effective enhancement of wear resistance at high dose and temperature is believed to be due to the significant hardening associated with high degree of precipitation of Zr nitrides and generation of prismatic dislocation loops.