• Title/Summary/Keyword: Ion Source

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Characterization of Cold Hollow Cathode Ion Source by Modification of Electrode Structure (전극 구조 변화에 따른 Cold Hollow Cathode Ion Source의 특성 변화)

  • Seok, Jin-Woo;Chernysh, V.S.;Han, Sung;Beag, Young-Hwoan;Koh, Seok-Keun;Yoon, Ki-Hyun
    • Journal of the Korean Ceramic Society
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    • v.40 no.10
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    • pp.967-972
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    • 2003
  • The inner-diameter 5 cm cold hollow cathode ion source was designed for the high current density and the homogeneous beam profile of ion beam. The ion source consisted of a cylindrical cathode, a generation part of magnetic field, a plasma chamber, convex type ion optic system with two grid electrode, and DC power supply system. The cold hollow cathode ion sources were classified into standard type (I), electron output electrode modified type (II). The operation of the ion source was done with discharge current, ion beam potential and argon gas flow rate. The modification of electron output electrode resulted in uniform plasma generation and uniform area of ion beam was extended from 5 cm to 20 cm. Improved ion source was evaluated with beam uniformity, ion current, team extraction efficiency, and ionization efficiency.

Experimental and simulation study on the backstreaming positive ions on the quarter-size negative ion source for CRAFT NNBI test facility

  • Yongjian Xu;Yuwen Yang;Jianglong Wei;Ling Yu;Wen Deng;Rixin Wang;Yuming Gu;Chundong Hu;Yahong Xie
    • Nuclear Engineering and Technology
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    • v.56 no.2
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    • pp.546-551
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    • 2024
  • As an effective methods of plasma heating, neutral beam injection (NBI) systems based on negative hydrogen ion sources will be utilized in future magnetic-confinement nuclear fusion experiments. Because of the collisions between the fast negative ions and the neutral background gas, the positive ions are inevitable created in the acceleration region in the negative NBI system. These positive ions are accelerated back into the ion source and become high energy backstreaming ions. In order to explore the characters of backstreaming ions, the track and power deposition of backstreaming H+ beam is estimated using the experimental and simulation methods at NNBI test facility. Results show that the flux of backstreaming positive ions is 1.93 % of that of negative ion extraction from ion source, and the magnet filed in the beam source has an effect on the backstreaming positive ions propagation.

Development and Test of ion Source with Small Orifice Cold Cathode

  • G. E. Bugrov;S. K. Kondranin;E. A. Kralkina;V. B. Pavlov;K. V. Vavilin;Lee, Heon-Ju
    • Journal of Korean Vacuum Science & Technology
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    • v.5 no.1
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    • pp.19-24
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    • 2001
  • The paper represents the results of the development and the test of "cold cathode" ion source model with 5 cm aperture where the glow discharge is utilized for generation of electrons in the cathode of the ion source. The results of probe measurements of the ion source are represented. The integral parameters such as electron energy distribution function(EEDF), electron density and mean electron energy, discharge voltage-current characteristics, and distribution of ion beam were studied.

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Neutral Beam Evolution in the KSTAR NBI Test Stand

  • In, S.R.;Shim, H.J.
    • Journal of Korean Vacuum Science & Technology
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    • v.7 no.1
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    • pp.1-7
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    • 2003
  • The pressure distributions in the test stand built for developing KSTAR NBI ion sources were obtained using a network system composed of conductance elements modeling the ion source, the neutralizer, and other beam line components. The allowable regime was defined on the coordinates of the gas supply rate to the ion source and the neutralizer, considering the proper conditions of the three critical parameters, the ion source pressure for good arc discharge, the pressure integral in the neutralizer for sufficient neutralization, and the chamber pressure for minimum neutral beam loss. The neutral beam evolution along the path from the ion source extraction grid to the calorimeter through the neutralizer, the bending magnet and the vacuum chamber was estimated for typical pressure distributions.

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Development of Large-Area RF Ion Source for Neutral Beam Injector in Fusion Devices

  • Chang, Doo-Hee;Jeong, Seung Ho;Kim, Tae-Seong;Park, Min;Lee, Kwang Won;In, Sang Ryul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.179.2-179.2
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    • 2013
  • A large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER device. Negative hydrogen ion sources are major components of neutral beam injection (NBI) systems in future large-scale fusion experiments such as ITER and DEMO. The RF sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck-Institute for Plasma Physics), Garching, for the ASDEX-U and W7-AS neutral beam heating systems. Ion sources of the first NBI system (NBI-1) for the KSTAR tokamak have been developed successfully with a bucket plasma generator based on the filament arc discharge, which have contributed to achieve a good plasma performance such as 15 sec H-mode operation with an injection of 3.5 MW NB power. There is a development plan of RF ion source at the KAERI to extract the positive ions, which can be used for the second NBI system (NBI-2) of the KSTAR and to extract the negative ions for future fusion devices such as Fusion Neutron Source and Korea-DEMO. The development progresses of RF ion source at the KAERI are described in this presentation.

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Development and Testing of a Prototype Long Pulse Ion Source for the KSTAR Neutral Beam System

  • Chang Doo-Hee;Oh Byung-Hoon;Seo Chang-Seog
    • Nuclear Engineering and Technology
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    • v.36 no.4
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    • pp.357-363
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    • 2004
  • A prototype long pulse ion source was developed, and the beam extraction experiments of the ion source were carried out at the Neutral Beam Test Stand (NBTS) of the Korea Superconducting Tokamak Advanced Research (KSTAR). The ion source consists of a magnetic bucket plasma generator, with multi-pole cusp fields, and a set of tetrode accelerators with circular apertures. Design requirements for the ion source were a 120kV/65A deuterium beam and a 300 s pulse length. Arc discharges of the plasma generator were controlled by using the emission-limited mode, in turn controlled by the applied heating voltage of the cathode filaments. Stable and efficient arc plasmas with a maximum arc power of 100 kW were produced using the constant power mode operation of an arc power supply. A maximum ion density of $8.3{\times}10^{11}\;cm^{-3}$ was obtained by using electrostatic probes, and an optimum arc efficiency of 0.46 A/kW was estimated. The accelerating and decelerating voltages were applied repeatedly, using the re-triggering mode operation of the high voltage switches during a beam pulse, when beam disruptions occurred. The decelerating voltage was always applied prior to the accelerating voltage, to suppress effectively the back-streaming electrons produced at the time of an initial beam formation, by the pre-programmed fast-switch control system. A maximum beam power of 0.9 MW (i.e. $70\;kV{\times}12.5\;A$) with hydrogen was measured for a pulse duration of 0.8 s. Optimum beam perveance, deduced from the ratio of the gradient grid current to the total beam current, was $0.7\;{\mu}perv$. Stable beams for a long pulse duration of $5{\sim}10\;s$ were tested at low accelerating voltages.

Closed Drift Ion Source 설계를 위한 전극 구조와 자장세기에 따른 방전 특성 연구

  • Kim, Gi-Taek;Lee, Seung-Hun;Gang, Yong-Jin;Kim, Jong-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.216.1-216.1
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    • 2014
  • Closed drift ion source는 그 특성으로 인하여 강판 표면처리, 금속 표면 산화막 형성, 폴리머 혹은 기타 표면 개질 등 다양한 분야에서 사용이 되고 있다. 다양한 환경에서 사용 되는 소스의 특성으로 인하여 각기 다른 공정에 대한 최적의 특성이 요구 되며, 이러한 공정 환경에 맞춘 소스를 설계하기 위해서 ion source내 전극의 구조 및 자기장 세기 등 이온소스의 구조적 특성에 대한 연구가 필요하게 된다. 본 연구에서는 선형 이온소스의 구조 설계를 위한 실험을 소형(이온빔 인출 슬릿 직경: 60 mm) 이온빔 인출 장치를 제작하여 전극 구조에 따른 방전 특성을 우선적으로 평가를 실시하여 소형 이온빔 인출 장치에서 도출된 결과를 바탕으로 0.3 m급 linear closed drift ion source 설계에 대한 변수를 조사 하였다. 실험은 양극-음극(C-A) 간 간격 및 음극 슬릿(C-C) 간격 그리고 자기장 세기 조건에서 방전 전류 및 인출 이온빔 전류량 측정하였으며, 이 결과를 전산모사 결과와 비교 하였다. 방전전압 1~5 kV, 가스유량 10~50 sccm 조건에서 Ar 이온빔 방전 특성을 평가한 결과, 양극-음극(C-A) 간격이 넓을수록, 음극-음극(C-C) 간격이 좁을수록 방전 전류량이 증가함을 확인 하였다. 또한, 공정 가스 압력 및 자기장 세기 변화에 따른 1~5 kV의 방전 전압에 대한 방전 특성의 관찰 결과, 압력 및 자기장 변화에 따라서 방전 전류의 변화를 관찰 할 수 있었으며, 이에 대한 결과를 통하여 이온 소스 구조 내부에서의 방전 영역에 대한 압력과 자기장 세기에 대한 영향을 분석 할 수 있었다.

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EO performance of IPS cell on the inorganic films surface using DuoPIGatron ion source (유기박막표면에 DuoPIGatron 이온소스를 이용한 IPS 셀의 전기광학 특성)

  • Kim, Byoung-Yong;Hwang, Jeoung-Yeon;Kim, Sang-Hun;Han, Jung-Min;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.04a
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    • pp.89-90
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    • 2006
  • Electro-optical (EO) characteristics of in-plane switching (IPS) cell on the polyimide surface using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned IPS-cell on poly imide surface ; the stable VT curve in the ion-beam-aligned IPS cell on a poly imide (PI) surface with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned IPS cell on a polyimide (PI) surface with ion beam exposure using new type IB equipment was obtained.

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EO performance of TN cell on the inorganic films surface using DuoPIGatron ion source on NDLC thin film (무기박막표면에 DuoPIGatron 이온소스를 이용한 TN-LCD 셀의 전기광학 특성)

  • Kim, Byoung-Yong;Hwang, Jeoung-Yeon;Kim, Sang-Hun;Han, Jung-Min;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.432-433
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    • 2006
  • Electro-optical (EO) characteristics of twisted nematic (TN) - liquid crystal display (LCD) on the NDLC thin film using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin film was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-cell on polyimide surface ; the stable VT curve in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained.

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Simulation of 4H-SiC MESFET for High Power and High Frequency Response

  • Chattopadhyay, S.N.;Pandey, P.;Overton, C.B.;Krishnamoorthy, S.;Leong, S.K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.3
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    • pp.251-263
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    • 2008
  • In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.