• 제목/요약/키워드: Ion Source

검색결과 969건 처리시간 0.03초

Structural and component characterization of the B4C neutron conversion layer deposited by magnetron sputtering

  • Jingtao Zhu;Yang Liu;Jianrong Zhou;Zehua Yang;Hangyu Zhu;Xiaojuan Zhou;Jinhao Tan;Mingqi Cui;Zhijia Sun
    • Nuclear Engineering and Technology
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    • 제55권9호
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    • pp.3121-3125
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    • 2023
  • Neutron conversion detectors that use 10B-enriched boron carbide are feasible alternatives to 3He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B4C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the 10B-enriched B4C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

통계분석을 이용한 경산 지역의 초미세먼지(PM2.5) 농도 특성 파악 (Characteristics of PM2.5 in Gyeongsan Using Statistical Analysis)

  • 이개초;황인조
    • 한국대기환경학회지
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    • 제31권6호
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    • pp.520-529
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    • 2015
  • The ambient $PM_{2.5}$ samples were collected by $PM_{2.5}$ sampler from September 2010 to December 2012 at Daegu University, Gyeongsan. A total of 260 samples were collected and 27 species were analyzed by inductively coupled plasma, ion chromatography, and thermal optical reflectance methods. Factor analysis identified four sources such as biomass burning source/secondary aerosol source, soil source, industry source, and incinerator source/mobile source. Also, backward trajectories were calculated using HYSPLIT 4 (Hybrid single-particle lagrangian integrated trajectory) model and PSCF (Potential source contribution function) model was applied to identify the possible source locations of carbonaceous species and water soluble ions species. PSCF results showed that the possible source locations of most chemical constituents measured in Gyeongsan were the industrial areas in the eastern coast of China, northeast regions of China, the Gobi Desert, and east sea of Korea.

대기압 플라즈마를 이용한 결정질 태양전지 표면 식각 공정 (Dry Etching Using Atmospheric Plasma for Crystalline Silicon Solar Cells)

  • 황상혁;권희태;김우재;최진우;신기원;양창실;권기청
    • 한국재료학회지
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    • 제27권4호
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    • pp.211-215
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    • 2017
  • Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29 % (RIE texturing).

POLYMER SURFACE MODIFICATION WITH PLASMA SOURCE ION IMPLANTATION TECHNIQUE

  • Han, Seung-Hee;Lee, Yeon-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon;Kim, Hai-Dong;Kim, Gon-ho;Kim, GunWoo
    • 한국표면공학회지
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    • 제29권5호
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    • pp.345-349
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    • 1996
  • The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.

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유한 오름 시간을 갖는 음전위 펄스에서 시변환 플라즈마 덮개의 거동 연구 (Measurement of time-dependent sheath for the negative voltage pulse with a finite rise time)

  • 김곤호;김영우;김건우;한승희;홍문표
    • 한국진공학회지
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    • 제8권3B호
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    • pp.361-367
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    • 1999
  • It was observed that the time-dependent sheath which was formed around the planar target biased by negatively voltage pulse with a finite rise time in the plasma source ion implantation. F\Results show that the time-dependent sheath consisted of two parts: the ion matrix sheath development during the pulse rise time and the dynamic sheath motion after attaining the full pulse. The ion matrix sheath development which is in proportion to square root of the pulse time and the pulse rise rate over the plasma density but independent of the ion mass. The dynamic sheath propagates with approximately the ion sound speed.

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The Prospect and Future of Li-ion Battery

  • Lee, Sung-Joon;Jeong, Seung-Hwan;You, Chung-Yeol;Soh, Dea-Wha;Hong, Sang-Jeen
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.627-628
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    • 2005
  • In recent years, the rapid growth of portable electronic device market requires higher density characteristics of batteries. The speed at which portability and mobility is advancing hinges much on the battery. What is important is this energy source that engineers design handled devices around the battery, rather than the other way around. Much improvement has been made in reducing the power consumption of portable devices. Currently, the most popular secondary battery is Li-ion battery. Li-ion has won the limelight and become the most prominent battery. This paper reviews the prospect and future of the Li-ion battery.

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FIB를 이용한 다이아몬드 기판 위의 나노급 미세 패턴의 형상 가공 (Nano-scale Patterning on Diamond substrates using an FIB)

  • 송오성;김종률
    • 한국산학기술학회논문지
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    • 제7권6호
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    • pp.1047-1055
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    • 2006
  • 필드이온빔(FIB) 가공기를 써서 초고강도의 벌크다이아몬드를 가공하기 위해 이온 소오스의 종류와 가공 조건에 따른 나노급 미세 선폭의 최적조건을 알아보고 이에 근거한 2차원적인 텍스트의 가공과 3차원적인 박막요소의 가공을 시도하였다. 다이아몬드 기판과 실리콘 기판을 Ga과 $H_2O$ 소오스를 이용하는 FIB를 써서 30 kV 빔 전류를 10 pA $\sim$ 5 nA로 변화시키면서 패터닝하고 이때 각각 20 ${\mu}m$ 길이로 생성되는 선형 패턴의 선폭, 깊이, 에치속도, 에치형상, 깊이선폭비 (aspect ratio)를 확인하였다. 다이아몬드도 실리콘 기판과 마찬가지로 나노급 패턴의 형성이 가능하였다. $H_2O$ 소오스를 채용한 경우가 에치 깊이가 2배 정도 증가하였으며 동일한 가공 조건에서는 실리콘에 비해 다이아몬드의 에치 선폭이 감소는 경향이 있었다. 특히 다이아몬드는 절연성 때문에 차지가 축적되어 가공 중 이온빔이 불안정해지는 문제가 있었으나 차지 중화 모드를 이용하여 성공적으로 sub-100 nm급 선폭의 미세 가공이 가능하였다. 확인된 선폭가공 조건에 근거하여 2차원적으로 0.3carat의 보석용 다이아몬드의 거들부에 300여개의 글자를 FIB를 활용하여 선폭 240 nm정도로 명확히 기록하는 것이 가능하였다. $Ga^+$이온과 30 eV-30 pA로 조건에서 비교적 넓은 선폭과 Z축 depth 고정범위에서 많은 개인정보의 기록이 영구적으로 가능하였으며 전자현미경으로 재생이 가능하였다. 3차원적으로 두께 $1{\mu}m$의 박막요소를 FIB가공과 백금 용접으로 떼어낸 후 FIB가공으로 두께가 100 nm가 되도록 한 후 투과전자현미경을 이용하여 성분 분석을 하는 것이 성공적으로 수행될 수 있었다.

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