• Journal of the Korean Electrochemical Society
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• v.14 no.1
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• pp.16-21
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• 2011

$Li_4Sn_xTi_{5-x}O_{12}$ was manufactured by high energy ball milling (HEBM) and used as an anode material for lithium ion battery. Various amount of $SnO_2$was added to $Li_4Ti_5O_{12}$ and heated at different temperatures. The purpose of this research was to see the effect of $SnO_2$ addition into $Li_4Ti_5O_{12}$. Manufactured samples were analyzed by TGA, XRD, SEM, PSA. Battery cycler was used to test the charge/discharge properties of active materials. Heat treatment temperature of $800^{\circ}C$ was needed to make a stable structure of $Li_4Sn_xTi_{5-x}O_{12}$ and the particle size distribution was $0.2{\sim}0.6\;{\mu}m$. Charge/discharge process was repeated for 50 cycles at room temperature. The initial capacity was 168mAh/g and the voltage plateau was observed at 1.55V(Li/$Li^+$).

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.16-21
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• 2016

Silicon/Carbon/CNT composites as anode materials for lithium-ion batteries were synthesized to overcome the large volume change during lithium alloying-de alloying process and low electrical conductivity. Silicon/Carbon/CNT composites were prepared by the fabrication processes including the synthesis of SBA-15, magnesiothermic reduction of SBA-15 to obtain Si/MgO by ball milling, carbonization of phenolic resin with CNT and HCl etching. The prepared Silicon/Carbon/CNT composites were analysed by XRD, SEM, BET and EDS. In this study, the electrochemical effect of CNT content to improve the capacity and cycle performance was investigated by charge/discharge, cycle, cyclic voltammetry and impedance tests. The coin cell using Silicon/Carbon/CNT composite (Si:CNT=93:7 in weight) in the electrolyte of $LiPF_6$ dissolved in organic solvents (EC:DMC:EMC=1:1:1 vol%) has better capacity (1718 mAh/g) than those of other composition coin cells. The cycle performance of coin cell was improved as CNT content was increased. It is found that the coin cell (Si:CNT=89:11 in weight) has best capacity retension (83%) after 2nd cycle.

• Tribology and Lubricants
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• v.22 no.5
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• pp.237-242
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• 2006

Surfaces found in nature, including biological surfaces have been providing inspiration to modify/fabricate artificial surfaces as solutions for tribological applications. As an example, the concept of 'lotus-effect' has motivated tribologists world wide to modify/fabricate surfaces for enhanced tribological performance. These was done by creating nano/micro-scale asperities on various surfaces using ion beam milling and ion-beam assisted roughening. In order to understand the attributes of natural surfaces, which are inspirational to tribologists, we characterized the surface of two natural surfaces-Nelumbo nucifera (lotus) and Colocasia esculenta leaves. Further, we evaluated their micro-scale friction property, both in their fresh and dried conditions. The characterization of surfaces was conducted using a confocal microscope and SEM, which involved the evaluation of size and distribution of protuberances. The micro-scale friction property was evaluated using a ball-on-flat type micro-tribo tester, under reciprocating motion. A soda lime glass ball (2 mm diameter) was used in these tests. Tests were conducted at the applied normal load of $3000{\mu}N$, at a sliding speed of 1 mm/sec for a scan length of 3 mm. All experiments were conducted at ambient temperature ($24{\pm}1^{\circ}C}$) and relative humidity ($45{\pm}5%$). It was observed that the friction behaviour of the natural surfaces was influenced by their surface characteristics (morphology and distribution of protuberances) and also by the condition (fresh or dried) in which they were tested.

• Journal of Electrochemical Science and Technology
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• v.4 no.3
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• pp.113-118
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• 2013

Fluorophosphate, $Na_2MnPO_4F$ as new cathode material was synthesized by carbothermal treatment method. Prepared $Na_2MnPO_4F$ has particle size under 100 nm and residual carbon exists in surface of $Na_2MnPO_4F$. Additional carbon coating was performed in order to increase the electrochemical properties. Even capacity and overpotential were improved by carbon coating using mechanical ball milling, the reduced crystallinity limited the drastic improvement of the electrochemical properties. To solve this problem, re-heat treatment was involved to recover crystallinity and then notable improvement of electrochemical properties was obtained. Specific amount of $Li^+$ that participates in electrochemical $Li^+$ insertion / extraction reaction, was x = 1 in $Li_xNa_{2-x}MnPO_4F$ within the voltage range of 2.0 to 4.8 V. The doubled capacity by 2 electron reaction can be obtained when NMPF is charged to higher voltage over 4.8 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.617-620
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• 1999

In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.43-44
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• 2007

SiO and graphite composite has been prepared by adopting high energy ball milling technique. The anode material shows high initial discharge and charge capacity values of 1138 and 568 mAh/g, respectively. Since the materials formed during initial discharge process the nano silicon/$Li_4SiO_3\;and\;Li_2O$ remains as interdependent, it may be expected that the composite exhibiting higher amount of irreversible capacity$(Li_2O)$ will deliver higher reversible capacity. In this study, pretreatment method of constant current-constant voltage (CC-CV) Provided high coulombic efficiency of SiO/C composite electrode removing the greater part of irreversible capacity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.100-104
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• 2000

Diamond film was deposited on Si substrate by using microwave plasma-enhanced chemical vapor deposition (MPECVD) system. After thinning the cross section between diamond film and Si substrate by ion milling method, we investigated its interface via transmission electron microscopy We could observe that the diamond film was grown either directly on Si substrate or via the interlayer between diamond film and Si substrate. Thickness of the interlayer was varied along the cross section. The interlayer might mainly composed of Sic andlor amorphous carbon. We could observe the well-developed electron diffraction pattern of both Si and diamond around the interface. Based on this result, we can conjecture the initial growth behavior of diamond film on Si substrate.

• Progress in Superconductivity
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• v.4 no.2
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• pp.109-113
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• 2003

We have developed a planar-type single layer second-order $high-T_{c}$ SQUID gradiometer, which can detect the $d^2$$B_{z/}$dxdy of the second-order field gradient. This SQUID gradiometer consists of four-way 'clover-leaf' pick-up loops and is coupled directly to a 4-junction dc SQUID in such a way that the coupling polarity of the two diagonal loops is opposite to that of the other two loops. The pickup loops are intrinsically balanced for both uniform field and the 1 st-order field gradient. The $YBa_2$$Cu_3$$O_{7}$ thin film was made by pulsed laser deposition method on $SrTiO_3$ single crystal substrate and patterned by photolithography with Ar ion milling technique. Response of this gradiometer was tested for both uniform field and the 2nd-order field gradient. Details of the design, fabrication, and results will be discussed.

• Progress in Superconductivity and Cryogenics
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• v.5 no.2
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• pp.41-45
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• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.