• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.31-31
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• 2005

• 한국진공학회지
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• 제6권S1호
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• pp.110-114
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• 1997

Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

• KSBB Journal
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• 제6권2호
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• pp.207-213
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• 1991

In this study poly (1-methyl-4-vinylpyridinium iodide-co-styrene) membrane with pyridinium cation as a fixed carrier was synthesized and the transport characteristics of the membrane was examined over various factors. As the concentration of the fixed carrier in the membrane was increased, the water content was increased. Meanwhile, the counter current of the organic anion and the chloride ion, the following results were obtained. Initial flux of Cl-, organic anion and Na+ decreased with the increasing thickness of membrane, and as the concentration of the fixed carrier increases, the initial flux of Cl- and organic anion increase but the initial flux of Na+ decreased. The flux equation of the organic anion, CCl3COO- was obtained from saturation kinetics as follows;$V_{o}=\frac{(8.67{\times}10^{-5}){\cdot}[NaCl]}{9.63{\times}10^{-2}+[NaCl]} mol/cm^2h$

• 멤브레인
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• 제18권3호
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• pp.250-255
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• 2008

열적, 기계적, 화학적 안정성이 우수한 제올라이트 분리막의 물/에탄올 선택도를 이온교환 실험을 통해 더욱 효과적으로 높이고자 하였다. KA형 제올라이트 분리막을 직접 합성하는 것은 용이하지 않으므로 NaA형 제올라이트 분리막을 합성한 후 이를 다시 이온교환 하여 KA형 제올라이트 분리막을 제조하였다. 공급되는 에탄올의 농도 변화 및 투과 증발실험 온도의 변화가 투과플럭스와 물 선택도에 미치는 영향을 고찰하였다. 이온교환 실험 후 전체 투과플럭스는 감소하였고 물 선택도는 증가함을 관찰할 수 있었다.

• 상하수도학회지
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• 제31권4호
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• pp.311-319
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• 2017

Scale formation is inevitable problem when seawater is treated by vacuum membrane distillation. The reason is the high concentration of calcium ion($Ca^{2+}$), sulfate ion(${SO_4}^{2-}$) and bicarbonate ion(${HCO_3}^-$). These ions form calcium sulfate($CaSO_4$) and calcium carbonate($CaCO_3$) on the membrane. The scale formed on membrane has to be removed, because the flux can be severely reduced and membrane wetting can be incurred. This study was carried out to investigate scale formation and effectiveness of acid cleaning in vacuum membrane distillation for SWRO brine treatment. It was found that permeate flux gradually declined until volume concentration factor(VCF) reached around 1.55 and membrane wetting started over VCF over 1.6 in the formation of precipitates containing $CaSO_4$ during VMD operation. In contrast, when calcium carbonate formed on membrane, permeate flux was gradually reduced until VCF 3.0. The precipitates containing both $CaSO_4$ and $CaCO_3$ were formed on the membrane surface and in the membrane pore.

• 멤브레인
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• 제14권1호
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• pp.26-36
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• 2004

상전환 방법으로 제조된 음이온 성 Poly(his[4-(3-aminophenoxy)phenyl]sulfone pyromellite)imide(ACPI) 한외여과막의 순수 투과유속과 용질 배재도 측정치로 투과성능을 연구하였다. ACPI 한외여과막의 투과성능은 캐스팅 용액의 조성과 막 제조 및 측정조건에 영향을 받았다. Bovine serum albumin (BSA) 용액을 pH 2.5-9.0 상태에서 ACPI 한외여과 막의 상대투과유속과 membrane filtration index (MFI) 측정한 결과 BSA의 등전점에서 멀어 질수록 상대투과유속은 증가하고 막 오염정도를 나타내는 MFI는 감소하였다. 또한, 친수성인 ACPI 한외여과막의 이온교환용량(IEC)이 증가할수록 상대투과유속은 증가하고, MFI는 감소하였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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• pp.48-48
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• 2001

• 천문학논총
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• 제2권1호
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• pp.13-20
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• 1985

Magnetic reconnect ion is studied numerically by means of a two dimensional MHD code. The initial magnetic field configuration is the two-dimensional dipole field, and the simulation model involves magnetic reconnect ion driven by the magnetized plasma flow. Strong plasma jetting, plasmoid formation and its fast ejection are observed in the downstream region. The dependence of reconnection rate on the incoming energy flux is found to be very sensitive, while the magnitude of the resistivity does not influence much on the reconnection rate. The simulation results are discussed in the context of the geomagnetic substorm.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국산학기술학회논문지
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• 제18권4호
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• pp.608-613
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• 2017

본 연구에서는 저품위인 35wt% 금합금에 대해 80.0wt% 이상의 Au를 얻기 위한 건식 정련 공정을 제안하였다. Au35wt%-Ag5wt%-Cu60wt%의 조성을 가진 금합금에 대해 PbO/(PbO+CaO)의 혼합비를 각각 0~1로 변화시키고 플럭스/금합금의 무게비는 1/2로 하여 $1200^{\circ}C$-5시간의 열처리를 진행하였다. 이때 공정 전, 후 시료의 조성 변화는 energy dispersive X-ray spectroscopy(EDS)로 확인하고, 공정이 완료된 후 분리된 플럭스 금속 원소 성분은 time of flight secondary ion mass spectromerty(ToF-SIMS)로 확인하였다. EDS분석 결과 플럭스의 비율이 1(PbO 단일)인 경우 Au의 함량이 35.0wt%에서 86.7wt%로 가장 크게 향상되었고, 다른 플럭스 조성의 경우도 84wt% 이상으로 정련이 가능하였다. 또한 2/3 혼합비의 플럭스에서 Ag가 플럭스부로 빠져나가는 손실이 가장 적었다. 플럭스부의 ToF-SIMS 분석 결과 플럭스의 비율이 1, 0 일 때 $Au^+$의 특성 피크의 강도가 각각 349, 37로 측정되었다. Au의 손실을 고려하였을 때 CaO 단일 플럭스의 사용이 더 유리할 수 있었으나, 이 정도의 신호강도는 무시할 수 있는 정도로 판단되었다. 따라서 혼합플럭스를 이용한 건식 열처리를 통해 효과적인 금의 정련이 가능하여 경제적인 습식제련의 전처리 공정으로 사용될 수 있음을 확인하였다.