• Analytical Science and Technology
• /
• v.24 no.6
• /
• pp.533-543
• /
• 2011

The hERG (human ether-a-go-go related gene) ion channel is a main factor for cardiac repolarization, and the blockade of this channel could induce arrhythmia and sudden death. Therefore, potential hERG ion channel inhibitors are now a primary concern in the drug discovery process, and lots of efforts are focused on the minimizing the cardiotoxic side effect. In this study, $IC_{50}$ data of 202 organic compounds in HEK (human embryonic kidney) cell from literatures were used to develop predictive 2D-QSAR model. Multiple linear regression (MLR), Support Vector Machine (SVM), and artificial neural network (ANN) were utilized to predict inhibition concentration of hERG ion channel as machine learning methods. Population based-forward selection method with cross-validation procedure was combined with each learning method and used to select best subset descriptors for each learning algorithm. The best model was ANN model based on 14 descriptors ($R^2_{CV}$=0.617, RMSECV=0.762, MAECV=0.583) and the MLR model could describe the structural characteristics of inhibitors and interaction with hERG receptors. The validation of QSAR models was evaluated through the 5-fold cross-validation and Y-scrambling test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.12
• /
• pp.750-758
• /
• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of Information Display
• /
• v.8 no.1
• /
• pp.1-5
• /
• 2007

We have developed a CMOS LTPS process which requires only five photolithographic masks and only one ion doping step. Drain/Source areas of NMOS TFTs were formed by PECVD deposition of a highly doped precursor layer while PMOS contact areas were defined by ion implantation. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N and p-channel devices reached field effect mobilities of $173cm^2$/Vs and $47cm^2$/Vs, respectively.

• Applied Biological Chemistry
• /
• v.47 no.4
• /
• pp.390-395
• /
• 2004

In order to characterize ion channels present in tomato roots, microsomes were incorporated into an artificial lipid bilayer arranged for electrophysiological analysis. Of the five different ion channels that could be found, a channel of 450 pS conductance was found most frequently. This channel displayed subconductance states of 450, 257 and 105 pS. All subconductance states showed linear current-voltage relationships. At positive holding potentials, high frequency of transient channel openings was observed; however, at negative potentials, the open times were long and open probability high. Po was 0.83 at -40 mV. When an additional 50 mM $K^+\;or\;Na^+$ was added to the cis side of bilayer, the reversal potentials shifted in the negative direction to near -10 mV. Thus, the 450 pS cation channel selects poorly between $K^+\;and\;Na^+$. In the presence of $100\;{\mu}M$ metal ions, the channel activity was severely inhibited by $La^{3+},\;Ba^{2+},\;and\;Zn^{2+}$, and Po was decreased to 0.2 or even less. However, $Al^{3+}\;and\;Cd^{2+}$ decreased the activity by only 20%. Interestingly, each metal ion showed different kinetics of channel inhibition. While $500\;{\mu}M\;La^{3+}$ inhibited the activities of all subconductance state, 1 mM $Zn^{2+}$ inhibited all except the 105 pS state. $Cd^{2+}$ changed the gating of the channel from a long-opening state to brief transient openings even at negative holding potentials. These data represent that the metal ions may have different binding sites on the channel protein and could be useful modulators and probes to investigate structural characteristics as well as the functional roles of the 450 pS channel on the root physiology.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.6
• /
• pp.37-45
• /
• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Korean Journal of Optics and Photonics
• /
• v.12 no.4
• /
• pp.320-326
• /
• 2001

In this paper, we have fabricated asymmetric Y-branch optical power splitters with various optical power splitting ratios by changing the width of one of the output waveguides using $Ag^+-Na^+$ ion change method in BK7 glass. The transmission characteristics of asymmetric Y-branch optical power splitters with different output waveguide width have been investigated using the finitedifference beam propagation method (FD-BPM). We have found the index of the channel waveguide formed by Ag+-Na+ ion change method in BK7 glass and have fabricated channel waveguides to examine the transmission characteristics of channel waveguide. And we have fabricated asymmetric Y-branch optical power splitters with output waveguide width from TEX>$4{\mu}m$ to $6{\mu}m$. /TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.97-98
• /
• 2006

For high performance transistor in the 0.14um generation, high speed sram is using a weak region of SCE(Short Channel Effect). It causes serious SCE problem (Vth Roll-Off and Punch-Through etc). This paper shows improvement of Vth roll-off and Ion/Ioff characteristics through high concentration Pocket implant, LDD(Light Dopped Dram) and low energy Implant to reduce S/D Extension resistance. We achieve stabilized Vth and Improved transistor Ion/Ioff performance of 10%.

• Proceedings of the Korean Biophysical Society Conference
• /
• 1998.06a
• /
• pp.39-39
• /
• 1998

Stretch-activated ion channel that is open by mechanical stress applied on the cell membrane is one of the classes of ion channels. Other than stretch-activated channel itself, it has been also reported that a variety of ion channels could be modulated by a mechanical cell stretch.(omitted)

• Proceedings of the Korean Biophysical Society Conference
• /
• 2001.06a
• /
• pp.36-36
• /
• 2001

Small conductance $Ca^{2＋}$-activated $K^{+}$ channels (or S $K_{Ca}$ channels) are a group of $K^{＋}$-selective ion channels activated by sub-micromolar concentrations of intracellular $Ca^{2＋}$ independent of membrane voltage. We expressed a cloned S $K_{Ca}$ channel, rSK2, in Xenopus oocytes and investigated the monovalent cation selectivity of the channels. We have used site-directed mutagenesis and macro-channel recordings to identify amino acid residues influencing the ion selectivity.(omitted)d)

• Proceedings of the Korean Biophysical Society Conference
• /
• 1999.06a
• /
• pp.22-23
• /
• 1999

Voltage-gated $K^{＋}$ channels represent the most complex group of ion channel genes expressed in cardiovascular system. The human Kv1.5 channel (hKv1.5) represents the $I_{Kur}$ repolarizing current in atrial myocytes. The hKv1.5 channel is functionally modulated by the Kv$\beta$1.3 subunit, which converts it from a delayed rectifier to a channel with rapid inactivation and enhanced voltage sensitivity.(omitted)d)