• Journal of the Speleological Society of Korea
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• no.82
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• pp.1-4
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• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.183-187
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_2$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_3$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_2$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_2$ and 16 % Ar with the $CHF_3$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.202-205
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• 2002

This paper describes the spot scanning with $^{11}$ C beams for the Heavy Ion Medical Accelerator in Chiba (HIMAC). The concave-shaped irradiation field was optimized and the dose distribution was measured by 128-ch ionization chamber. Because of the wide momentum spread inherent in $^{11}$ C beams, the dispersion caused from the beam line and the scanning magnets should be taken into account to calculate the dose distribution of $^{11}$ C beams and their irradiated field. The reconstructed dose distribution is in good agreement with the experimental results.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.118-122
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• 1998

$Al_2O_x$(0$Al_2O_3$ gradient coatings were formed by evaporating pure aluminium(99.9%) in $O_2$ environment with an IBAD facility, 12keV $Ar^+$ was used to irradiate the coatings simultaneously during the deposition. Sample's composition and depth profile were analysed by RBS and AES measurement, and their microhardness and porosity property were also measured in the experiment. Results show that, the oxygen concentration in the deposited coatings has a nearly linear relationship with the inputting gas flow before $O_2$ partial pressure in the target chamber reaches $1.2\times10^{-3}$ mbar under which stoichiometric $Al_2O_3$ could be formed; and sample's microhardness and porosity property is affected significantly by the oxygen concentration in the coatings.

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.215-218
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• 2007

In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.34-38
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• 1999

In this study, molybdenum thin films were etched with the various Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio in an magnetically enhanced reactive ion etching(MERIE) by the etching parameter such as rf power of 185 watts, chamber pressure of 40 mTorr and B-field of 80 gauss. The etch rate was 150 nm/min under Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO$_2$, photoresist were respectively 0.94, 0.50. The surface reaction of the etched Mo thin films was investigated with X - ray photoelectron spectroscopy (XPS).PS).

• The Journal of Korean Society for Radiation Therapy
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• v.22 no.2
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• pp.123-129
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• 2010

Purpose: The purpose of this study was to evaluate dosimetric characteristics of Optically stimulated luminescent dosimeters (OSLD) for dosimetry Materials and Methods: InLight/OSL $NanoDot^{TM}$ dosimeters was used including $Inlight^{TM}MicroStar$ Reader, Solid Water Phantom, and Linear accelerator ($TRYLOGY^{(R)}$) OSLDs were placed at a Dmax in a solid water phantom and were irradiated with 100 cGy of 6 MV X-rays. Most irradiations were carried out using an SSD set up 100 cm, $10{\times}10\;cm^2$ field and 300 MU/min. The time dependence were measured at 10 minute intervals. The dose dependence were measured from 50 cGy to 600 cGy. The energy dependence was measured for nominal photon beam energies of 6, 15 MV and electron beam energies of 4-20 MeV. The dose rate dependence were also measured for dose rates of 100-1,000 MU/min. Finally, the PDD was measured by OSLDs and Ion-chamber. Results: The reproducibility of OSLD according to the Time flow was evaluated within ${\pm}2.5%$. The result of Linearity of OSLD, the dose was increased linearly up to about the 300 cGy and increased supralinearly above the 300 cGy. Energy and dose rate dependence of the response of OSL detectors were evaluated within ${\pm}2%$ and ${\pm}3%$. $PDD_{10}$ and PDD20 which were measured by OSLD was 66.7%, 38.4% and $PDD_{10}$ and $PDD_{20}$ which were measured by Ion-chamber was 66.6%, 38.3% Conclusion: As a result of analyzing characteration of OSLD, OSLD was evaluated within ${\pm}3%$ according to the change of the time, enregy and dose rate. The $PDD_{10}$ and $PDD_{20}$ are measured by OSLD and ion-chamber were evaluated within 0.3%. The OSL response is linear with a dose in the range 50~300 cGy. It was possible to repeat measurement many times and progress of the measurement of reading is easy. So the stability of the system and linear dose response relationship make it a good for dosimetry.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2006.08a
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• pp.62-62
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• 2006

• Journal of Radiation Protection and Research
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• v.33 no.4
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• pp.173-181
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• 2008

To ensure the performance of radon detectors, three passive radon detectors ($RadTrak^{(R)}$, $Radopot^{(R)}$, and $E-PERM^{(R)}$)have been reviewed. The difference ratios of RadTrak and Radopot tested in the radon standard chamber were -13.2% and -6.0%, respectively, which were in good accordance within 20% of the value measured by $AlphaGUARD^{(R)}$. To ensure the performance of the long term measurement, the 3 detectors were installed at the same position of approximately one hundred of dwellings for one year. The correlation curve between RadTrak and Radopot shows good agreement with a correlation coefficient ($R^2$) of 0.91. However, The correlation curve between E-PERM and Radopot shows bad agreement ($R^2$ = 0.021). In addition, the distribution map of annual mean indoor gamma dose rate measured with E-PERM was not in accordance with the distribution map of outdoor gamma dose rate measured by Portable Ion Chamber. According to the results, some requisites for the selection of the radon passive detectors in the large-scale indoor radon survey were discussed.

• Journal of Radiation Protection and Research
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• v.22 no.3
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• pp.207-218
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• 1997

Purpose: The objective of this study is to develop an algorithm for estimation of tumor dose using measured transmission dose as a part of the development of on-line dosimetry system. Materials and Methods: Data of transmission dose were measured under various FS, Tp and PCD with a special water phantom for 6 MV and 10 MV X-ray. SCD (source-chamber distance) was set to 150 cm. Measurements were conducted with a 0.125 cc ion chamber. Results: Using measured data and regression analysis, two algorithms were developed for estimation of expected reading for measured data. Algorithm 1 consisted of the quadratic function of PCD and the tertiary function of AlP (area-perimeter ratio). Algorithm 2 consisted of the tertiary function of log(A/P)and the tertiary function of PCD. Algorithm 2 required less data set and was more accurate in comparing expected and observed dose. Conclusion: Using the algorithm developed, transmission dose can be estimated for any exposure condition, i.e. any given Tp, PCD and FS with high accuracy. To complete this algorithm, further developments are needed regarding the beam modifying device, the tissue inhomogeneity and the irregular body surface.