• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.431-431
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• 2007

In this paper, the LC alignment characteristics of the NDLC thin film deposited by PECVD and sputtering were reported respectively. The NDLC thin film deposited using sputter showed uniform LC alignment at the 1200 eV of the ion beam intensity and pretilt angle was about $2^{\circ}$ while the NDLC thin film deposited using the PECVD showed uniform LC alignment and high pretilt angle at the 1800 eV of the ion beam intensity. Concerning the ion beam intensity, uniform LC alignment of the NDLC thin film deposited by the sputtering was achieved at the lower intensity. And the pretilt angle of the NDLC thin film deposited by sputter was higher than those of NDLC thin film that was deposited using the PECVD. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$, respectively. However, NDLC thin film deposited by the PECVD showed stability at high temperature without defects, compared to NDLC thin film deposited by the sputter.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.538-542
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• 1995

The etching characteristics of magnetic thin films of permalloy and Fe-based alloys are investigated. The thin films are fabricated by rf magnetron sputtering and the substrates used are silicon and glass. Etching is done by ion beam technique and the main process parameters investigated are beam voltage, beam current and accelerating voltage. The etch rate of the magnetic films is proportional to the beam current, but it is not directly related to the accelerating voltage and beam voltage. The dependence of etch rate on the process parameters can be explained by ion current density. It is found that the ion beam etching is effective in obtaining well-developed micro-patterns on the permalloy and Fe- based magnetic thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.324-329
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• 2000

We investigated the effect of hydrogen ion beam on the formation of DLC thin film, which is deposited on the Si substrate with negative carbon ion by $Cs^+$ ion sputtering and positive hydrogen ion by Kauffmann type ion source. The amount of hydrogen in the DLC films increased as increasing hydrogen gas flow rate from 0 sccm to 12 sccm. As increasing hydrogen flow rate, $sp^2$bonding structure increased. The reason is that the hydrogen ions have relatively high energy, although total amount of hydrogen is very small compared with that of CVD process. These results suggest that the physical energy transfer plays a dominant role on the formation of DLC film.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.361-369
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• 2005

InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.104-105
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• 2000

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$_{sub}$, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO phases appeared against T$_{sub}$ and PO$_3$are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$_{sub}$ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS which are related with Gibbs'free energy change for single Bi2212 or Bi2223 phase are performed.ormed.i2212 or Bi2223 phase are performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.64-68
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• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\_$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO phases appeared against T$\_$sub/ and PO$_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$\_$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.304-307
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• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $PO_3$. The correlation diagrams of the BSCCO phases appeared against $T_{sub}$ and $PO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi220l and Bi2223 phases as well as Bi2212 one come out as stable phases depending on $T_{sub}$ and $PO_3$. From these results, the thermodynamic evaluations of ${\Delta}H$ and ${\Delta}S$ S, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.133-135
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• 2006

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.304-307
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• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO Phases appeared against T7ub and PO3 are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable Phases depending on T$\sub$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.104-107
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• 2000

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\_$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO Phases appeared against T$\_$sub/ and PO$_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$\_$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.