• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.102-102
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• 1996

This paper represents a new type low power High Frequency technological ion source (HF TIS) for ion - beam processing: the surface modification of materials, cleaning of surface, sputtering, coating of thin films, and polishing. The operational principle of HF TIS is based on the excitation of electrostatic waves in plasma located in the external magnetic field. Low power HF TIS with diameter 92 rom gives the opportunity to obtain beams of inert and chemically reactive gases with currents range from 5 to 150 mA (current density $0.015\;~\;3.5\;mA/\textrm{m}^2$) and ion beam energy 100 ~ 2500 eV at a HF power level 10 ~ 150 W. Three grid concave type ion optical system (IOS) is used for extraction and formation ofion beam.n beam.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.482-486
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.328-329
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• 2005

Inorganic alignment layer (IAL) was deposited on an indium-tin-oxide (ITO) by using reactive sputtering deposition method. After deposited, IAL was irradiated by $Ar^+$ ion beam (IB) for liquid crystal (LC) alignment. IAL treated by various conditions such as IB energy, IB incident angle, and IB irradiation time had excellent alignment property and electro-optical property the same as that of PI. We investigated into the stability of ion beam treated IAL after a lapse of long time. However IAL irradiated IB did not occur degradation of electro-optical property. The results implied that IAL irradiated IB was adopted as LC alignment layer instead of rubbed polyimide.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권9호
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• pp.527-532
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with dc bias voltage of -10V showed lower discharge voltage and lower erosion rate byion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardement during deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.280-281
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• 2006

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a Titanium dioxide ($TiO_2$) thin film by rf magnetron sputtering system for 15min under various rf power. A very low pretilt angle by ion beam exposure on the $TiO_2$ thin film was measured. A good LC alignment by the ion beam alignment method on the $TiO_2$ thin film surface was observed at annealing temperature of $200^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $250^{\circ}C$. Consequently, the low NLC pretilt angle and the good thermal stability of LC alignment by the ion beam alignment method on the $TiO_2$ thin film by sputter method as various rf power condition can be achieved.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.147.1-147
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• 2003

• 한국세라믹학회지
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• 제35권8호
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• pp.795-800
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• 1998

• Mass Spectrometry Letters
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• 제12권1호
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• 한국진공학회지
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• 제17권2호
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• pp.81-89
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• 2008

분자동역학을 이용하여 이온빔 스퍼터링 과정에서 원자의 거동을 연구하였다. Ar이온이 Au와 Pd(001) 표면에 다양한 에너지와 입사각도로 충돌할 때, 표면원자들 중 일부는 공간으로 떨어져 나갔으며, 반응 후 일부 원자들은 초기 표면보다 위쪽에 재증착 되는 현상이 관찰되었다. 재증착 원자의 수율은 스퍼터된 원자보다 Au의 경우 약 5배, Pd의 경우 약 3배 많이 입사 에너지와 입사 각도에 상관없이 발생됨을 확인하였다. 연속된 입사계산을 통해, 스퍼터링 과정에 발생되는 다양한 표면 패턴 형성 메커니즘을 식각만으로 설명하고 있는 종래의 개념과는 달리, 이온빔으로 인해 끊임없이 발생되는 재증착 원자들이 표면의 구조를 형성하는데 중요한 역할을 하는 것으로 확인되었다.