• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.297-300
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• 2006

The response surface modeling of the pretilt angle control using ion-beam (IB) alignment on nitrogen doped diamond-like carbon (NDLC) thin film layer is investigated. This modeling is used to analyze the variation of the pretilt angle under various process conditions. IB exposure angle and IB exposure time are considered as input factors. The analysis of variance technique is settled to analyze the statistical significance, and effect plots are also investigated to examine the relationships between the process parameters and the response. The model can allow us to reliably predict the pretilt angle with respect to the varying process conditions.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.459-463
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• 2000

Direct use of negative ions for modification of materials has opened new research such as charging-free ion implantation and new materials syntheses by pure kinetic bonding reactions. For these purposes, a new solid-state ce-sium ion source has been developed in the laboratory scale. In this paper, diamond like carbon(DLC) films were prepared on silicon wafer by a negative cesium ion gun. This system does not need any gas in the chamber; deposition occurs under high vacuum. The ion source has good control of the C- beam energy(from 80 to 150eV). The result of Raman spectrophotometer shows that the degree of diamond-like character in the films, $sp^3$ fraction, increased as ion beam energy increases. The nanoindentation hardness of the films also increases from 7 to 14 GPa as a function of beam energy. DLC films showed ultra-smooth surface(Ra~1$\AA$)and an impurity-free quality.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.3
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.97-97
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• 2009

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.5-9
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• 2004

Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.27-27
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• 1998

진공기술의 응용과 진공환경의 이용은 더 이상 논하지 않더라도 산업 전반에 그 충요성이 점점 더 커가고 있다. 이러한 여건에도 불구하고 진공율 이용하는 system 개밟의 국산화는 수 입하는 system으$\mid$ 수에 비하여 절대적으로 부족하며, 또한 개발하는 system의 자동화는 거의 이 루어지지 않고 있으며, 자동화된 진공판련 system은 거의 대부분 수입에 의흔하고 있다. 실험 실 규모에서부터 System올 하나하나 개밭하고, 이톨 자동화하는 노력과 일이 진행됨다면 산업 응용에 있어서도 자연스럽게 자동화된 system으$\mid$ 개발이 이루어 질 것이다 .. system 자동화는 상 품수명의 단축과 이에 따른 다품종 소량을 요구하는 시장수요에 대응하고, 인력절감과 고풀짙 화로 생산성 향상의 요구에 대응하기 위하여 필요하다. 본 연 구에 서 는 e-beam evaporator로 evaporation하면 서 ion beam으로 assist하여 thin film율 제 작하는 IBAD vacuum system율 싫 계 및 제 작하고[1,2], PLC[3,떼톨 이 용하여 system 자동화톨 하였다 .. thin film 제작 process는 먼저 기본 진공상태로 만뚫고 난 뒤, e-beam evaporator로 e evaporation하면서 ion beam source로 assist하여 substrate 011 thin film율 제조한다 226;. thin film올 제 조하면서 thickness monitor로 sample의 thickness rate톨 control 하고, sample의 균얼성과 밀착 성을 고려하여 substrate톨 rotation 및 heating 할 수 있도록 싫계, 제작하였다. 양질의 박막올 제조하기 위해서 진공환경이 좋은 상태로 제공되어야 한다. 이톨 위하여 oil free operation 0 I 가 능한 dry pump와 turbo molecular pump로 고진공 배기 하였다. 진공도의 흑점은 thermal effect 툴 고려하여 cold cathode ion gauge률 사용하였고, intro chamber와 main chamber 사이에는 g gate valve톨 설치하여 벌도로 운용되도록 하였다. 이러한 process를 박막의 두께, 진공도, 시 간, 온도, 공정 동의 조건올 기훈으로 자동화한 것이다. 또한 정전과 단수에 대한 interlock 기능 도 고려하였다.하였다.

• Korean Journal of Plant Resources
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• v.18 no.1
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• pp.169-178
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• 2005

Effects of heavy-ion beam$(^{20}Ne)$ irradiation on growth and DNA alteration of tobacco plants were investigated. Seed germination and plant height were decresed as the ion-beam intensity was increased. However, the bolting and flowering were promoted by the low intensities of 5 Gy to 10 Gy treatment. Out of the 100 primers screened, 59 primers generated 336 DNA fragments by RAPD analysis, and one specific DNA fragment that amplified in control but not in the ion-beam irradiated plants was observed. By AFLP analysis, DNA fragment difference related to the ion-beam treatment was not detected but observed among the plant bodys.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.842-848
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• 2008

In this study, we propose a novel micro-ion engine system. Single plasma source is used for both ion beam source and neutralizing electron source. By changing the electrical connection, either operation can be switched. This micro-ion engine system gives translation motion and attitude control to microspacecraft. The major objective of this study is verification of our concept. Small plasma source of 20 mm diameter was developed. Plasma was sustained by microwave power. Using this plasma source, ion beam extraction and electron emission was successively demonstrated.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.166-171
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• 1997

IBED is a very promosing thin film deposition method because of its many advantages, such as excellent adhesion property of films to substrates, room temperature processing, ease of control over the composition and thickness of films, and so on, over the conventional techniques, It has been widely applied in the field of surface modification of materials in the last decade. In our laboratory, many kinds of thin films, such as wear-resistant hard coatings, corrosion and oxidation protective coatings, biomaterial films, buffer layer for high temperature superconductor films, and oxygen sensitive film, have been synthesized by IBED, and several industrial applications of the IBED films have been conducted.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.302-303
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• 2006

The response surface modeling of the pretilt angle control using ion-beam (IB) alignment on nitrogen doped diamond-like carbon (NDLC) thin film layer is investigated. The response surface model is used to analyze the variation of the pretilt angle under various process conditions IB exposure angle and IB exposure time are considered as Input factors. The analysis of variance technique is used to analyze the statistical significance, and effect plots are also investigated to examine the relationships betweenthe process parameters and the response. The model can allow us to reliably predict the pretilt angle with respect to the varying process conditions.