• Transactions on Electrical and Electronic Materials
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• 제17권6호
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• pp.355-358
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• 2016

We present the alignment characteristics of LC (liquid crystal) molecules on solution-derived HLO (hafnium lanthanum oxide) films fabricated using IB (ion-beam) irradiation. We then demonstrated that LC molecules can be homogeneously and uniformly aligned on the HLO film irradiated at an IB incident energy of 1.2 keV. Physicochemical analysis methods such as atomic force microscopy and X-ray photoelectron spectroscopy were used to verify the LC alignment mechanism on the IB-irradiated HLO film. In addition, the electro-optical performance of a TN (twisted-nematic) cell fabricated using the IB-irradiated HLO film exhibited characteristics superior to those of the conventional TN cell fabricated using a rubbed polyimide layer.

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.285-287
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• 2010

This paper introduces homogeneous liquid crystal (LC) orientations on chemically modulated polystyrene (PS) surfaces using various ion beam (IB) exposure times. Transparent PS was replaced with conventional polyimide material. As a non-contact process, the IB bombardment process induced LC orientation parallel to the IB process. Through x-ray photoelectron spectroscopy, it was shown that the chemical compositional changes of the IB-irradiated PS surfaces were determined as a function of IB exposure time. Using this analysis, the optimal IB bombardment condition was determined at an IB exposure time of up to 15 seconds. Moreover, thermal stability on IB-irradiated PS surfaces were carried out which showed that a relatively high IB exposure time induced a thermally stable LC alignment property.

• Transactions on Electrical and Electronic Materials
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• 제7권6호
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• pp.297-300
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• 2006

The response surface modeling of the pretilt angle control using ion-beam (IB) alignment on nitrogen doped diamond-like carbon (NDLC) thin film layer is investigated. This modeling is used to analyze the variation of the pretilt angle under various process conditions. IB exposure angle and IB exposure time are considered as input factors. The analysis of variance technique is settled to analyze the statistical significance, and effect plots are also investigated to examine the relationships between the process parameters and the response. The model can allow us to reliably predict the pretilt angle with respect to the varying process conditions.

• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.130-135
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• 2021

Wrinkle patterns were fabricated on styrene-butadiene-styrene (SBS) block copolymer substrates using ion-beam (IB) irradiation with various intensities. The wavelength of the wrinkle pattern increased as the IB intensity was increased from 800 to 1,600 eV. IB irradiation-induced changes in the surface properties that were confirmed via physicochemical surface analyses. X-ray photoelectron spectroscopy analysis revealed chemical surface reformation due to the IB irradiation, resulting in C-O/C=O bonds after IB irradiation that were not reported before. These results indicate that the surface chemical modification caused by IB irradiation is strongly related to the surface modulus, which is important when fabricating wrinkle patterns. Furthermore, a strong IB irradiation induced a strong compressive strain; thus the size of the wrinkle pattern was increased.

• 한국진공학회지
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• 제16권5호
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• pp.338-342
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• 2007

MgO는 플라즈마 디스플레이 패널 (Plasma Display Panel, PDP)의 보호막으로 널리 쓰이고 있다. 본 실험에서는 산소 이온 빔을 이용하여 증착된 MgO 보호막의 특성을 조사하였다. MgO 증착 시 보조 산소 이온 빔의 에너지를 변화시킴에 따라 MgO 보호막의 특성과 PDP 패널 발광특성에 미치는 영향을 분석하였다. 본 연구에서는 산소 이온 에너지가 300 eV 일 때 소자의 방전개시전압이 가장 낮게 나타났고, 발광 휘도 및 발광 효율은 가장 높게 나타났다. 또한 산소 이온 빔의 조사에너지에 따라 MgO 박막의 결정성 및 표면조도가 크게 영향을 받는 것을 확인할 수 있었다. 산소 이온 빔 보조 증착 방법을 이용하여 패널의 발광 휘도와 발광 효율 등 발광특성을 개선하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.593-597
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• 2005

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\phi}$ 10nm and smaller is available. Currently FIB is not being applied in the fabrication of this micro part because of some problems to redeposition and charging effect of the substrate causing reduction of accuracy with regards to shape and productivity. Furthermore, the prediction of the material removal rate information should be required but it has been insufficient for micro part fabrication. The paper have the targets that are FIB-CVD characteristic analysis and minimum line pattern resolution achievement fur 3D micro fabrication. We make conclusions with the analysis of the results of the experiment according to beam current, pattern size and scanning parameters. CVD of 8 pico ampere shows superior CVD yield but CVD of 1318 pico ampere shows the pattern sputtered. And dwell time is dominant parameter relating to CVD yield.

• 한국공작기계학회논문집
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• 제15권6호
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• pp.71-75
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• 2006

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. The target of this paper is the analysis of FIB sputtering process according to tilt angle, dwell time and overlap for application of 3D micro and pattern fabrication and to find the effective beam scanning conditions using Taguchi method. Therefore we make the conclusions that tilt angle is dominant parameter for sputtering yield. Burr size is reduced as tilt angle is higher.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.544-549
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• 1997

Injector of high voltage or linear ion accelerator is intended to generate, extract and form beam of certain species with required parameters at the entrance of accelerating structure or, for low energy case, directly in the processing chamber (end station). Injector is the main part defining the ion accelerator performance and reliability. Its power supply and control system (PSCS) features are conditioned by placing the injector equipment at high voltage potential and by complexity of the plasma-beam load. The injector's PSCS should provide: - Transmission of electric power onto high voltage (h/v) terminal; - Obtaining of required output characteristics for injector equipment operation; - Transmission of the operational data and start/stop signals from h/v terminal to control cabinet; - Rremote control of injector; - Withstanding the high voltage breakdowns and X-ray radiation; - Compatibility with other equipment. The paper is concerned with analysis of injectors' PSCS structure and description of the system developed for 50 keV, 20 mA heavy ion injector.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.381-387
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• 2008

Neutron production rate in spherically convergent beam fusion(SCBF) device as a portable neutron source strongly depends on the ion current and the grid cathode structure. In this paper, as the process of design and analysis, Design of Experiment(DOE) based on the results by Finite Element Method-Flux Corrected Transport(FEM-FCT) method is employed to calculate the ion current. This method is very useful to find optimal design conditions in a short time. Number of rings, radius of rings, and distance between the grid cathode and center are selected as control factors. From the results in the optimized model, the higher ion current is calculated and deeper potential well is also observed.

• 한국산학기술학회논문지
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• 제7권6호
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• pp.1047-1055
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• 2006

필드이온빔(FIB) 가공기를 써서 초고강도의 벌크다이아몬드를 가공하기 위해 이온 소오스의 종류와 가공 조건에 따른 나노급 미세 선폭의 최적조건을 알아보고 이에 근거한 2차원적인 텍스트의 가공과 3차원적인 박막요소의 가공을 시도하였다. 다이아몬드 기판과 실리콘 기판을 Ga과 $H_2O$ 소오스를 이용하는 FIB를 써서 30 kV 빔 전류를 10 pA $\sim$ 5 nA로 변화시키면서 패터닝하고 이때 각각 20 ${\mu}m$ 길이로 생성되는 선형 패턴의 선폭, 깊이, 에치속도, 에치형상, 깊이선폭비 (aspect ratio)를 확인하였다. 다이아몬드도 실리콘 기판과 마찬가지로 나노급 패턴의 형성이 가능하였다. $H_2O$ 소오스를 채용한 경우가 에치 깊이가 2배 정도 증가하였으며 동일한 가공 조건에서는 실리콘에 비해 다이아몬드의 에치 선폭이 감소는 경향이 있었다. 특히 다이아몬드는 절연성 때문에 차지가 축적되어 가공 중 이온빔이 불안정해지는 문제가 있었으나 차지 중화 모드를 이용하여 성공적으로 sub-100 nm급 선폭의 미세 가공이 가능하였다. 확인된 선폭가공 조건에 근거하여 2차원적으로 0.3carat의 보석용 다이아몬드의 거들부에 300여개의 글자를 FIB를 활용하여 선폭 240 nm정도로 명확히 기록하는 것이 가능하였다. $Ga^+$이온과 30 eV-30 pA로 조건에서 비교적 넓은 선폭과 Z축 depth 고정범위에서 많은 개인정보의 기록이 영구적으로 가능하였으며 전자현미경으로 재생이 가능하였다. 3차원적으로 두께 $1{\mu}m$의 박막요소를 FIB가공과 백금 용접으로 떼어낸 후 FIB가공으로 두께가 100 nm가 되도록 한 후 투과전자현미경을 이용하여 성분 분석을 하는 것이 성공적으로 수행될 수 있었다.