• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

• Microbiology and Biotechnology Letters
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• v.38 no.3
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• pp.235-243
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• 2010

For decades, traditional mutation breeding technologies using spontaneous mutation, chemicals, or conventional radiation sources have contributed greatly to the improvement of crops and microorganisms of agricultural and industrial importance. However, new mutagens that can generate more diverse mutation spectra with minimal damage to the original organism are always in need. In this regard, ion beam irradiation, including proton-, helium-, and heavier-charged particle irradiation, is considered to be superior to traditional radiation mutagenesis. In particular, it has been suggested that ion beams predominantly produce strand breaks that often lead to mutations, which is not a situation frequently observed in mutagenesis induced by gamma-ray exposure. In this review, we briefly describe the general principles and history of particle accelerators, and then introduce their successful application in ion beam technology for the improvement of crops and microbes. In particular, a 100-MeV proton beam accelerator currently under construction by the Proton Engineering Frontier Project (PEFP) is discussed. The PEFP accelerator will hopefully prompt the utilization of ion beam technology for strain improvement, as well as for use in nuclear physics, medical science, biology, space technology, radiation technology and basic sciences.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.261-264
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• 2014

$SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.967-972
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• 2003

The inner-diameter 5 cm cold hollow cathode ion source was designed for the high current density and the homogeneous beam profile of ion beam. The ion source consisted of a cylindrical cathode, a generation part of magnetic field, a plasma chamber, convex type ion optic system with two grid electrode, and DC power supply system. The cold hollow cathode ion sources were classified into standard type (I), electron output electrode modified type (II). The operation of the ion source was done with discharge current, ion beam potential and argon gas flow rate. The modification of electron output electrode resulted in uniform plasma generation and uniform area of ion beam was extended from 5 cm to 20 cm. Improved ion source was evaluated with beam uniformity, ion current, team extraction efficiency, and ionization efficiency.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1262-1264
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• 1993

An amorphous $Se_{75}Ge_{25}$ thin film as inorganic resist for the focused ion beam lithography(FIBL) is investigated. This film offers an attractive potential alternative to polymer resists because of a number of advantages, such as the possibility of preparing physically uniform films of thickness as small as 200A and obtaining both positive and negative resist action in the same material, compatibility with dry processing, the sensitivity on optical, e-beam and ion beam exposure, the high-temperature stability, etc. In previous paper, the defocused ion beam-induced characteristics in a-$Se_{75}Ge_{25}$ film has been propose. Practically it is neccesary to know the relation with resist and source ions. For the purpose, the ion stopping power, the ion projected range and ion transmission coefficiency are studied. In this paper, the theoretically calculated values of parameters are presented and compared with theory.

• The Journal of Korean Academy of Prosthodontics
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• v.29 no.2
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• pp.245-265
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• 1991

The purpose of this study was to observe the changes of the elemental transmission and bond strength between the metal and porcelain according to various kinds of ion beam mixing method. ion beam mixing of $meta1/SiO_2$ (silica), $meta1/Al_2O_3$(alumina) interfaces causes reactions when the $Ar^+$ was implanted into bilayer thin films using a 100KeV accelerator which was designed and constructed for this study. A vacuum evaporator used in the $10^{-5}-10^{-6}$ Torr vacuum states for the evaporation. For this study, three kinds of porcelain metal selected, -precious, semiprecious, and non-precious. Silica and alumina were deposited to the metal by the vacuum evaporator, separately. One group was treated by two kinds of dose of the ion beam mixing $(1\times10^{16}ions/cm^2,\;5\times10^{15}ions/cm^2)$, and the other group was not mixed, and analyzed the effects of ion beam mixing. The analyses of bond strength, elemental transmissions were performed by the electron spectroscopy of chemical analysis (ESCA), light and scanning electron microscope, scratch test, and micro Vickers hardness tests. The finding led to the following conclusions. 1. In the scanning electron and light microscopic views, ion beam mixed specimens showed the ion beam mixed indentation. 2. In the micro Vickers hardness and scratch tests, ion beam mixed specimens showed higher strength than that of non mixed specimens, however, nonprecious metal showed a little change in the bond strength between mixed and non mixed specimens. 3. In the scratch test, ion beam mixed specimens showed higher shear strength than that of non treated specimens at the precious and semiprecious groups. 4. In the ESCA analysis, Au-O and Au-Si compounds were formed and transmission of the Au peak was found ion beam mixed $SiO_2/Au$ specimen, simultaneously, in the higher and lower bonded areas, and ion beam mixed $SiO_2/Ni-Cr$ specimen, oxygen, that was transmitted from $SiO_2\;to\;SiO_2/Ni-Cr$ interface combined with 12% of Ni at the interface.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.8
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• pp.84-90
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• 2010

In focused ion beam (FIB) fabrication processes the ion beam intensity with Gaussian profile has a drawback for high resolution machining. In this paper, the fabrication method to modify the beam profile at substrate using silt mask is proposed to increase the machining resolution at high current. Slit mask is utilized to block the part of beam and transmit only high intensity portion. A nano manipulator is utilized to handle the silt mask. Geometrical analysis on fabricated profile through silt mask was conducted. By utilizing proposed method, improvement of machining resolution was achieved.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.538-542
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• 1995

The etching characteristics of magnetic thin films of permalloy and Fe-based alloys are investigated. The thin films are fabricated by rf magnetron sputtering and the substrates used are silicon and glass. Etching is done by ion beam technique and the main process parameters investigated are beam voltage, beam current and accelerating voltage. The etch rate of the magnetic films is proportional to the beam current, but it is not directly related to the accelerating voltage and beam voltage. The dependence of etch rate on the process parameters can be explained by ion current density. It is found that the ion beam etching is effective in obtaining well-developed micro-patterns on the permalloy and Fe- based magnetic thin films.

• Applied Microscopy
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• v.48 no.4
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• pp.122-125
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• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.44-44
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.