• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.360-364
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• 2010

$Li_4Ti_5O_{12}$ thin film with inverse hemispheric structure was fabricated on a Pt/Ti/$SiO_2$/Si substrate by the sol-gel and dip coating method for use as an anode for 3-dimensional (3D) thin-film batteries. Polystyrene (PS) beads of 400 nm diameter were used to prepare the template for the inverse hemispheric structure. A coating solution prepared using precursor sources was dropped on the template-deposited substrates, which were then calcinated at $400^{\circ}C$. The template was removed by calcination, and the inverse hemispheric structure was successfully formed by an annealing process. The cyclic performance during high-rate charge/discharge processes of the $Li_4Ti_5O_{12}$ film with inverse hemispheric structure was superior to that of the flat $Li_4Ti_5O_{12}$ film.