• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.491.2-491.2
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• 2014

Generally, silicon heterojunction solar cell has intrinsic and n-type of hydrogenated amorphous silicon (a-Si:H) as passivation layer and BSF layer. In this study, antimony, novel material, deposited on back side of the heterojunction solar cell as passivation and BSF layer to substitute the a-Si:H and the characteristics of the solar cell such electrical properties and optical properties were analyzed. And SIMS analysis was carried out to obtain the depth profile of the BSF layer which was deposited by laser annealing process.

• 한국의류학회지
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• 제33권4호
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• pp.563-573
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• 2009

This study analyzed the trends and aesthetic characteristics of fur design found in the contemporary fashion to examine the status of fur material in the contemporary fashion design, and through an analysis of the meaning it attempted to come up with a new viewpoint and form on material for the future fashion design. A literature review was used to explore the kinds and properties of furs. In addition, an empirical analysis of works that have appeared in fashion collections since the year 2000 was conducted with local and foreign fashion magazines such as Gap, Vogue, and Mode & Mode and other publications related to fashion collections. In the contemporary fashion, the trends of fur design are represented by use of various items, material combinations, application to decorative purposes(like trimmings, details, or accessories), and a wide range of colors and textures available by advanced dyeing and finishing techniques. The aesthetic values intrinsic to fur design are that the expression of conspicuous luxury covers even the qualitative aspect of luxury and adds fashionable images to casual items, contributing to the popularization of fur fashion, by using a variety of artificial furs; the expression of sensual feminine beauty allows the animal and primitive feel characteristic of furs to convert a feminine body into a sensual image of more than a simple biological impulse; and the expression of hybridity presents a new viewpoint through distortions, exaggerations, deviations from the existing constituent forms, or futuristic sensibilities in all elements of fashion design.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.362-366
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• 2006

OLEDs(Organic Light Emitting Diodes) are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We investigated electrical properties of N, N-diphenyl-N, N bis (3-methyphenyl-l,1'-biphenyl-4,4'-diamine (TPD) and tris-8-hydroxyquinoline aluminum$(Alq_3)$ when their thicknesses were changed variedly from 3:7 to 5:5 of their thickness ratios. And we also studied properties of OLED depend on their deposition rate between $0.05{\sim}0.2$ nm/s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.275-276
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• 2005

Organic Light Emitting Diodes(OLEDs) are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We invested electrical properties of N,N-diphenyl-N,N bis (3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) and tris-8-hydroxyquinoline aluminum($Alq_3$) when their thicknesses were changed variedly from 3:7 to 7:3 of their thickness ratios. And we also studied properties of OLEDs depend on their deposition rate between 0.05$\sim$0.2 [nm/s].

• 한국표면공학회지
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• 제38권4호
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• pp.163-166
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• 2005

Carbon nanotube-copper composite structures were fabricated using composite plating method and their field emission characteristics were investigated. Multi-walled carbon nanotubes (MWNTs) synthesized by chemical vapor deposition were used in the present study. It was revealed that turn-on field was about $3.0\;V/{\mu}m$ with the current density of $0.1\;{\mu}A/cm^2.$ We observed relatively uniform emission characteristics as well as stable emission current Carbon nanotube-copper composite plating method is efficient and it has no intrinsic limit on the deposition area. Moreover, it gives strong adhesion between emitters and an electrode. Therefore, we recommend that carbon nanotube-copper composite plating method can be applied to fabricate electron field emitters for large area FEDs and large area vacuum lighting sources.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.180-187
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• 1996

The use of preformed copolymers and their cross-linking have been attempted in order to improve the intrinsic fragility of monolayers and Langmuir-Blodgett (LB) films and to make their technological applications. It has shown that an imidization followed a polyion-complexation can stabilize the LB films against heat and solvents. And, when the polymer structure was properly designed, concurrent removal of the alkyl tails together with imide formation could be accomplished. In this paper, the monolayers of the polymers which were polyion-complexed with PAA at the air-water interface can be transferred onto solid substrates such as porous fluorocarbon membranes filter and quartz crystal microbalance. The properties of the monolayers and the LB films will be discussed by .pi.-A isotherms, FT-IR, DSC, deposition ratio, QCM, and SEM. In addition, it was attempted to investigate the response characteristics of polymer LB films to the organic gases by the use of QCM.

• 대한토목학회논문집
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• 제37권2호
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• pp.467-474
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• 2017

하천 합류부에서는 지형적 특성에 기인하는 고유한 수체혼합양상과 흐름특성을 보인다. 이러한 합류부에서의 2차원적 수체혼합양상을 파악하기 위해서는 측선기반이 아닌 평면적 계측이 필요하다. 본 연구에서는 낙동강-금호강 합류부를 대상으로 UAV를 활용한 정성적 수체혼합모니터링과 ADCP, 다항목수질측정기, 현장용광학입도분석기(LISST : Laser In-Situ Scattering & Transmissometry)를 이용한 흐름, 수질, 부유입자특성에 대한 측정을 통해 하천합류부에서의 2차원적 수체흐름 및 물질혼합 특성을 파악할 수 있는 현장측정기법을 제시하고 적용성을 검토하고자 하였다. 수리량, 수질인자, 부유입자의 농도 및 입도분포에 대한 현장측정을 통해 복잡한 지형적 특성을 가지는 하천합류부에서의 2차원적 흐름양상과 그에 따른 수체 및 물질혼합양상을 파악할 수 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.