• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.176-182
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• 1992

t-Stress and junction leakage current characteristics of CVD-tungsten have been investigated. Stressversus continuous annealing temperature plot. shows hysteresis curve where the stress level of the cooling curveis higher than that of the heating curve. It is found that the thermal and intrinsic stress of tungsten film depositedby SiH4 reduction is higher than that by Hz reduction.The tungsten film deposited by SiHl reduction is in the tensile stress state below 700"Cnd the stress ofthe film decreses with increasing annealing temperature. The stress state changes into compressive stress atabout 700"Cnd the compressive stress increases rapidly with increasing temperature.Leakage current of the n+/p diode increases rapidly especially in the range of 400-450$^{\circ}$C with increasingdeposition temperature of the CVD-W by SiH4 reduction, which is due to the Si consumption by W encroachment.On the other hand leakage current of the n+/p diode slightly increases with increasing SiH4/WF6 ratio.h increasing SiH4/WF6 ratio.

• Korean Journal of Materials Research
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• v.24 no.7
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• pp.375-380
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• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.41-47
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• 2024

In this study, the resistance characteristics of semi-insulating SiC single crystals grown using the PVT method were investigated, considering the purity level of SiC source powders used in PVT growth and the cooling procedure after crystal growth. Two β-SiC powders with different purities were employed, and the cooling rate after growth was adjusted to achieve various resistance values. 4-inch HPSI-SiC ingots were grown using the PVT method, utilizing SiC powders with low nitrogen concentration and relatively high nitrogen concentration. These ingots were then subjected to different cooling procedures to modify the cooling rate. Transmission/absorption spectra and crystal quality of the grown crystals were analyzed through UV/VIs/NIR spectroscopy and X-ray rocking curve analysis, respectively. Additionally, electrical properties were investigated through non-contact resistivity analysis to identify the dominant factors influencing resistivity properties.

• Archives of Pharmacal Research
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• v.4 no.1
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• pp.33-41
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• 1981

The prepared dextran sulfates were characterized by measuring the reduced viscosisty at five different concentrations to obtain an intrinsic viscosity in both phosphate and tris buffers, pH 7.4, ionic strength of 0.1 Dextran sulfates having 0.81, 1.06 sulfate groups per hexose unit have reduced viscosity value below 40 ml/g whereas dextran sulfates having 1.21, 1.43, 1.69 sulfate groups per hexose unit have reduced viscosity value over 40 ml/g. Dextran sulfate having 1.21 sulfate groups per hexose unit had highest value of reduced viscosity. The reduced viscosity of dextran sulfate in tris buffer was always higher than that in phosphate buffer regardless of the sulfate content of dextran sulfate. The influence of the sulfation of the dextran sulfate. The influence of the sulfation of the dextran sulfate molecule on the dextran sulfate-LDL interaction was studied with three different dextran sulfate molecules. Dextran sulfate molecules having more than one sulfate group per hexose unit. The dextran sulfate having 0.81 sulfate groups per hexose unit showed considerably different precipitation curves in phosphate and tris buffers. This peculiar behavior of dextran sulfate having 0.81 sulfate groups per hexose unit in the two buffer systems was not noticed with dextran sulfate having more than one noticed with dextran sulfate having more than one sulfate group per hexose unit.

• Journal of Pharmaceutical Investigation
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• v.39 no.2
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• pp.107-110
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• 2009

To investigate the interaction and skin damage of valsartan with polysorbate 80, the physical mixture of valsartan and polysorbate 80 was prepared and then its adhesion, dispersibility, DSC and skin damage in nude rats were investigated. The physical mixture of valsartan and polysorbate 80 appeared as an aggregated form and could hardly be dispersed in water. The DSC curve showed that physical mixture disappeared the intrinsic peaks of valsartan and polysorbate 80 at about $115^{\circ}C$ and $170^{\circ}C$, respectively. It appeared a new relatively broad endothermic peak at about $150^{\circ}C$, suggesting that valsartan was chemically interacted with polysorbate 80. Furthermore, it induced the severe skin irritation and damage in nude mice. Thus, polysorbate 80 must not be used in the preparation of valsartan-loaded pharmaceutical dosage forms.

• The Korean Journal of Physiology and Pharmacology
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• v.1 no.5
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• pp.477-484
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• 1997

Intracellular recordings of oscillatory firing (bursting activity) were obtained from Purkinje cells (PCs) in rat cerebellar slices. Apamin inhibited post-burst hyperpolarizations (PBHs) progressively and finally terminated oscillatory firing activity of PCs. Apamin did not affect the amplitude or duration of the after-hyperpolarization (AHP) between spikes within the burst. In the voltage clamp mode, apamin shifted the whole-cell, quasi-steady state I/V relationship in an inward direction and abolished the zero slope resistance (ZSR) region by blocking outward current. Nickel ($Ni^{2+}$) terminated oscillatory activity and also abolished the ZSR region. However, $Ni^{2+}$ did not have progressive blocking action on the post-burst hyperpolarization before it blocked oscillatory activity. $Ni^{2+}$ blocked an inward current at potentials positive to approximately -65 mV, which was responsible for the ZSR region and outward current at more negative potentials. These data indicated that oscillatory activity of PCs is sustained by a balance between a slow $Ni^{2+}$-sensitive inward current and an apamin-sensitive outward current in the region of ZSR of the whole-cell I/V curve.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1799-1805
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• 2014

In this article, we described about the preparation and electrochemical properties of a flexible energy storage system based on a plastic polyethylene terephthalate (PET) substrate. The PET treated with UV/ozone was fabricated with multilayer films composed of 30 polyaniline (PANi)/graphene oxide (GO) bilayers using layer-by-layer assembly of positively charged PANi and negatively charged GO. The conversion of GO to the reduced graphene oxide (RGO) in the multilayer film was achieved using hydroiodic acid vapor at $100^{\circ}C$, whereby PANi structure remained nearly unchanged except a little reduction of doping state. Cyclic voltammetry and charge/discharge curves of 30 PANi/RGO bilayers on PET substrate (shorten to PANi-$RGO_{30}$/PET) exhibited an excellent volumetric capacitance, good cycling stability, and rapid charge/discharge rates despite no use of any metal current collectors. The specific capacitance from charge/discharge curve of the PANi-$RGO_{30}$/PET electrode was found to be $529F/cm^3$ at a current density of $3A/cm^3$, which is one of the best values yet achieved among carbon-based materials including conducting polymers. Furthermore, the intrinsic electrical resistance of the PANi-$RGO_{30}$/PET electrodes varied within 20% range during 200 bending cycles at a fixed bend radius of 2.2 mm, indicating the increase in their flexibility by a factor of 225 compared with the ITO/PET electrode.

• Bulletin of the Korean Chemical Society
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• v.26 no.2
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• pp.260-264
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• 2005

The nature of the active site of Tobacco acetohydroxyacid synthase (AHAS) in the substrate- and cofactorbinding was studied by kinetics and fluorescence spectroscopy. The substrate saturation curve does not follow Michaelis-Menten kinetics at different temperatures (7, 21 and 37 ${^{\circ}C}$), pH (6.5, 7.5 and 8.5) and buffers (Tris-HCl and MOPS). The concentration of one half of the maximum velocity ($S_{0.5}$) decreased in the following order: pyruvate $\gt$ ThDP $\approx$$Mg^{+2}$ $\gt$ FAD. However, the catalytic efficiency (K$_{cat}/S_{0.5}$) inversely decreased in the following order; FAD $\gt$ $Mg^{+2}$ $\approx$ThDP $\gt$ pyruvate, indicating that the cofactors by in decreasing order; FAD, $Mg^{+2}$, ThDP, affect the catalysis of AHAS. The dissociation constant ($K_d$) of the intrinsic tryptophan fluorescence decreased with the same tendency of the concentration of one half of the maximum velocity ($S_{0.5}$) decreasing order. This data provides evidence that the substrate and cofactor binding natures of the active site, as well as its activation characteristics, resemble those of other ThDP-dependent enzymes.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.4
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• pp.160-167
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• 2012

This paper is concerned with a particular fracture mechanics parameter ${\Delta}K_{th}$, known as the 'threshold stress intensity range', or 'fatigue threshold'. This threshold ${\Delta}K_{th}$ constitutes, as it were, a hinge between the notion of crack initiation and the notion of crack growth. It has often been thought that, like the endurance limit, it could be an intrinsic criterion of the material. The study was conducted on a SA-508 pressure vessel steel used in the nuclear power industry. This material exhibits a typical threshold effect in the range of the crack growth rates which were determined; that is, below approximately $da/dN=10^{-6}mm/cycle$, the slope of the da./dN versus ${\Delta}K$ curve is almost vertical. The value of ${\Delta}K_{th}$ was determined at a growth rate of $10^{-7}$ mm/cycle according to the ASTM Standard for threshold testing. The fatigue threshold values are in the range 21 $kg/mm^{3/2}$ to 12 $kg/mm^{3/2}$ depending on the stress ratio effect.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.239-242
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• 1990

The effect of $CaCo_3$, $SrCo_3$, $SiO_2$ and $H_3BO_3$ in the range of 0.1-1.0 wt% on strontium ferrites consisting of the magnetoplumbite phase $SrO-5.7Fe_2O_3$ were investigated. The hysteresis loop, density, demagnetization curve and the intrinsic coercive force were measured on anisotropic ferrite. The particle diameter and 0.5(wt%) of second additive $CaCo_3$ is particularly important for the properties of anisotropic ferrite. When the particle diameter is decreased from 1.98(${\mu}m$) to 1.07(${\mu}m$), the remance is increased from 2900 to 4010(G) and the coercive force from 2150 to 2850(Oe) at a sintering temperature 1230 ($^{\circ}C$). Remance Br(G), coercleve force(Oe) and maximum energy product of sample A-16 are87(%), 56(%), 67(%) of S-W model theoretical value.