• 마이크로전자및패키징학회지
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• 제17권3호
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• pp.59-63
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• 2010

Immersion Sn plating was produced on Cu foil by distributing nano-sized diamonds (ND). The ND distributed on the coating surface broke the continuity of Sn-oxide layer, therefore leading to penetrate the molten solder through the oxide and retarding the wettability degradation during a reflow process. Furthermore, the ND in the Sn coating played a role of diffusion barrier for Sn atoms and decreased the growth rate of intermetallic compound ($Cu_6Sn_5$) layer during the solid-state aging. The study confirmed the importance of ND to improve the wettability and reliability of the Sn plating. Complete dispersion of the ND within the immersion Sn plating needs to be further developed for the electronic packaging applications.

• Corrosion Science and Technology
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• 제15권2호
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• pp.92-107
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• 2016

Graphene was coated on austenitic and martensitic stainless steels to simulate the metallic bipolar plate of proton exchange membrane fuel cell (PEMFC). Graphene oxide (GO) was synthesized and was reduced to reduced graphene oxide (rGO) via a hydrazine process. rGO was confirmed by FE-SEM, Raman spectroscopy and XPS. Interfacial contact resistance (ICR) between the bipolar plate and the gas diffusion layer (GDL) was measured to confirm the electrical conductivity. Both ICR and corrosion current density decreased on graphene coated stainless steels. Corrosion resistance was also improved with immersion time in cathodic environments and satisfied the criteria of the Department of Energy (DOE), USA. The total concentrations of metal ions dissolved from graphene coated stainless steels were reduced. Furthermore hydrophobicity was improved by increasing the contact angle.

• 세라미스트
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• 제21권1호
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• pp.24-43
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• 2018

Organic-inorganic halide perovskite materials have attracted significant attention during the last few years because of their superior properties for electronic and optoelectronic devices, such as their long charge carrier diffusion lengths and high photoluminescence quantum yields of up to 100% with tunable bandgaps over the entire visible spectral range. In addition to solar cells, light emitting diodes (LEDs) represent a fascinating application for halide perovskite materials. In this study, we review the recent progress in halide perovskite LEDs. The current strategies for improving the performance of halide LEDs, focusing on morphological engineering, dimensional engineering, compositional engineering, surface passivation, interfacial engineering, and the plasmonic effect are discussed. The challenges and perspectives for the future development of halide perovskite LEDs are also considered.

• Structural Engineering and Mechanics
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• 제76권5호
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• pp.599-611
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• 2020

A state-space method is developed to investigate the time-dependent behaviors of an angle-ply cylindrical shell in cylindrical bending with surface-bonded piezoelectric layers. Both the interfacial diffusion and sliding are considered to describe the properties of the imperfect interfaces. Particularly, a matrix reduction technique is adopted to establish the transfer relations between the elastic and piezoelectric layers of the laminated shell. Very different from our previous paper, in which an approximate numerical technique, i.e. power series expansion method, is used to deal with the time-dependent problems, the exact solutions are derived in the present analysis based on the piezoelasticity equations without any assumptions. Numerical results are finally obtained and the effects of imperfect interfaces on the electro-mechanical responses of the laminated shell are discussed.

• 한국재료학회지
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• 제10권2호
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• pp.160-165
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• 2000

Sputter Cu(1-4.5at.%Mg) alloy를 100mTorr이하의 산소압력에서 온도를 증가시키며 열처리하였을 때 표연과 계면에서 형성된 MgO의 확산방지막 특성을 살펴보았다 먼저, $Cu(Mg)/SiO_2/Si$ 구조의 샘플을 열처리했을 때 계면에서는 $2Mg+SiO_2{\rightarrow}2MgO+Si$의 화학반응에 의해 MgO가 형성되는데 이 MgO충에 의해 Cu가 $SiO_2$로 확산되는 것이 현저하게 감소하였다. TiN/Si 기판 위에서도 Cu(Mg)과 TiN 계면에 MgO가 형성되어 Cu(4.5at.%Mg)의 경우 $800^{\circ}C$까지 Cu와 Si의 확산을 방지할 수 있었다. 표면에 형성된 MgO위에 Si을 증착하여 $Si/MgO(150\;{\AA})/Cu(Mg)/SiO_2/Si$구조로 만든 후 열처리했을 때 $150\;{\AA}$의 MgO는 $700^{\circ}C$까지 Si과 Cu의 확산을 방지할 수 있었다. 표면에 형성된 MgO($150\;{\AA}$)의 누설전류특성은 break down 5V, 누설전류 $10^{-7}A/\textrm{cm}^2$의 값을 나타냈다. 또한 $Si_3N_4/MgO$ 이중구조에서는 매우 낮은 누설전류밀도를 나타냈으며 MgO에 의해 $Si_3N_4$ 증착시 안정적인 계면이 형성됨을 확인하였다.

• 한국세라믹학회지
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• 제42권9호
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• pp.637-644
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• 2005

In order to find a proper buffering material which can prohibit an unwanted interfacial reaction between anode and electrolyte of LSGM-based SOFC, we examined a gadolinium doped ceria and scandium doped zirconia as a candidate. For this examination, we investigated the microstructural and phase stability of the interface under different buffering layer conditions. According to the investigation, ceria based material induced a serious La diffusion out of the LSGM electrolyte resulted in the formation of very resistive $LaSrGa_3O_7$ phase at the interface. On the other hand zirconia based material was directly reacted with LSGM electrolyte and thus produced very resistive reaction products such as $La_2Zr_2O_7,\;Sr_2ZrO_4,\;LaSrGaO_4\;and\;LaSrGa_3O_7$. From this study we found that an improper buffering material induced the higher internal cell resistance rather than an interfacial stability.

• 한국세라믹학회지
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• 제44권12호
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• pp.710-714
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• 2007

LSGM$(La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_{3-{\delta}})$ is the very promising electrolyte material for lower-temperature operation of SOFCs, especially when realized in anode-supported cells. But it is notorious for reacting with other cell components and resulting in the highly resistive reaction phases detrimental to cell performance. LDC$(La_{0.4}Ce_{0.6}O_{1.8})$, which is known to keep the interfacial stability between LSGM electrolyte and anode, was adopted in the anode-supported cell, and its effect on the interfacial reactivity and electrochemical performance of the cell was investigated. No severe interfacial reaction and corresponding resistive secondary phase was found in the cell with LDC buffer layer, and this is due to its ability to sustain the La chemical potential in LSGM. The cell exhibited the open circuit voltage of 0.64V, the maximum power density of 223 $mW/cm^2$, and the ohmic resistance of $0.17{\Omega}cm^2$ at $700^{\circ}C$. These values were much improved compared with those from the cell without any buffer layer, which implies that formation of the resistive reaction phases in LSGM and then deterioration of the cell performance is resulted mainly from the La diffusion from LSGM electrolyte to anode.

• 마이크로전자및패키징학회지
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• 제19권1호
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• pp.67-73
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• 2012

본 연구는 고밀도 미세회로 형성 및 원가절감에 유리한 페이스트의 인쇄/건조, 프리프레그 관통 및 적층 공법을 이용한 $B^2it$ 공법을 이용하여 FMC 기판을 제조한 후 열적 스트레스에 대한 범프의 계면반응 연구를 수행하였다. 열적 스트레스에 대한 Ag 범프의 접합 신뢰성을 조사하기 위해 열충격시험, 열응력시험을 수행한 후 전기적 특성 및 단면분석을 통해 균열발생 여부를 조사하였다. 또한 Ag 범프와 Cu 랜드의 접합계면에 대한 계면반응 특성을 분석하기 위해 주사전자현미경(SEM), 에너지분산스펙트럼(EDS) 및 FIB분석을 수행하여 계면에서 발생되는 확산반응을 분석하였다. 이러한 결과를 바탕으로 열적 스트레스에 대한 Ag 페이스트 범프/Cu 랜드 접합계면에서 계면반응에 의해 형성된 Ag-Cu 합금층을 확인할 수 있었다. 이러한 합금층은 Cu ${\rightarrow}$ Ag 보다, Ag ${\rightarrow}$ Cu 로의 확산속도가 빠르기 때문에, Cu층에서의 (Ag, Cu) 합금층이 보다 많이 관찰되었으며, 합금층이 Ag범프의 계면 접합력 향상에 기여하는 것을 알 수 있었다.

• 접착 및 계면
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• 제22권4호
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• pp.144-152
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• 2021

유기반도체와 게이트 절연체 간 계면전하이동을 이해하는 것은 고성능 유기메모리, 고안정성 유기전계효과 트랜지스터 (이하 유기트랜지스터) 개발에 기여할 수 있다. 본 연구에서는 계면 간 전하이동의 특이거동, 즉 홀전하가 유기반도체에서 고분자절연체로 이동되어 편재화되는 것이 편재화 준위간의 커플링에 의해 비선형적으로 가속화될 수 있음을 최초로 밝혀내었다. 이의 규명을 위해 rubrene 단결정과 Mylar 절연체를 기반으로 한 유기트랜지스터를 vacuum lamination 공정으로 제작하여 반도체-절연체 계면의 반복적인 전사와 박리에도 안정적인 소자를 개발하였다. Rubrene 단결정과 Mylar film의 표면을 각각 광유도 산소 확산법과 UV-오존 처리를 통해 결함을 생성시켰다. 그 결과, 계면 간 전하이동과 이에 의한 바이어스 스트레스 효과가 rubrene과 Mylar가 가진 편재화 준위 간 커플링에 의해 비선형적으로 급격하게 가속화되었음을 관측하였다. 특히, rubrene 단결정에 있는 적은 밀도의 편재화 준위가 계면 간 전하이동을 촉진하는데 가교역할을 함을 밝혀내었다

• Bulletin of the Korean Chemical Society
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• 제20권12호
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• pp.1479-1482
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• 1999

We have studied the behavior of interdiffusion between partially miscible polymer pair from a theoretical viewpoint by applying the reptation model for collective interdiffusion and spinodal decomposition in polymer mixtures with different molecular weights. We find that our predictions agree well with the experiments of Klein and co-workers, where the exponent α of the initial increase of interfacial width with time in $t^{\alpha}$ is significantly lower than 0.5 for free diffusion.