• 분석과학
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• 제6권2호
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• pp.197-205
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• 1993

닉켈과 크롬 20% 혼합분말을 실험실용 아트리터에서 시간을 달리하여 밀링하였고 입도분포, 미세조직 및 X-레이 회절 특성을 조사하였다. 합금화 상태를 확인하고자 포화자화값과 보자력값을 측정하였고 플라즈마 용해 잉곳 경우와 비교하였다. 기계적 합금화는 분말의 미세화 단계 후 크롬이 닉켈 속으로 확산이 일어나는 계면적의 증가에 의해서 진행하였다. 그러나 15시간 이상 밀링 후 서브 미크론 크기의 결정립으로 정상상태가 이루어졌음에도 불구하고 용해 잉곳과 같이 조성적으로 균일한 고용합금의 자성특성이 관찰되지 않았다. 밀링 시간이 길어질수록 결정립의 크기는 미세화되었으며 합금층이 증가하였다. 따라서 조성의 균질화는 분말의 소성변형에 의해서 일어나는 성분분말 사이의 계면적 증가와 계면내에서 입계 또는 전위와 같은 격자결함을 통해 크롬의 닉켈 속으로 확산에 의해서 율속되는 것으로 생각된다.

• 한국재료학회지
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• 제28권5호
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• pp.268-272
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• 2018

An $Al_2O_3/AlN$ bilayer deposited on GaN by atomic layer deposition (ALD) is employed to prepare $Al_2O_3/AlN/GaN$ metal-insulator-semiconductor (MIS) diodes, and their interfacial properties are investigated using X-ray photoelectron spectroscopy (XPS) with sputter etch treatment and current-voltage (I-V) measurements. XPS analyses reveal that the native oxides on the GaN surface are reduced significantly during the early ALD stage, indicating that AlN deposition effectively clelans up the GaN surface. In addition, the suppression of Al-OH bonds is observed through the ALD process. This result may be related to the improved device performance because Al-OH bonds act as interface defects. Finally, temperature dependent I-V analyses show that the barrier height increases and the ideality factor decreases with an increase in temperature, which is associated with the barrier inhomogeneity. A Modified Richardson plot produces the Richardson constant of $A^{**}$ as $30.45Acm^{-2}K^{-2}$, which is similar to the theoretical value of $26.4Acm^{-2}K^{-2}$ for n-GaN. This indicates that the barrier inhomogeneity appropriately explains the forward current transport across the $Au/Al_2O_3/AlN/GaN$ interface.

• 소성∙가공
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• 제28권3호
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• pp.135-144
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• 2019

Electromagnetic impulse welding (EMIW) is a type of solid state welding using the Lorentz force generated by interaction between the magnetic field of the coil and the current induced in the workpiece. Although many experimental studies have been investigated on the expansion and compression welding of tube using the EMIW process, studies on the EMIW process of lap joint between flat sheets are uncommon. Since the magnetic field enveloped inside the tube can be controlled with ease, the electromagnetic technique has been widely used for tube welding. Conversely, it is difficult to control the magnetic field in the flat sheet welding so as to obtain the required welding velocity. The current study analyzed the effects of coil shape on the impulse velocity for suitable flat one-turn coil for the EMIW of the flat sheets. The finite element (FE) multi-physics simulation involving magnetic and structural field of EMIW were conducted with the commercial software LS-DYNA to evaluate the several shape variables, viz., influence of various widths, thicknesses, gaps and standoff distances of the flat one-turn coil on the impulse velocity. To obtain maximum impulse velocity, the flat one-turn coil was designed based on the FE simulation results. The experiments were performed using an aluminum alloy 1050 sheets of 1.0mm thickness using the designed flat one-turn coil. Through the microscopic interfacial analysis of the welded specimens, the interfacial connectivity was observed to have no defects. In addition, the single lap joint tests were performed to evaluate the welding strength, and a fracture occurred in the base material. As a result, a flat one-turn coil was successfully designed to guarantee welding with bond strength equal to or greater than the base material strength.

• 한국결정성장학회지
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• 제9권2호
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• pp.162-167
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• 1999

3가지 방향성을 가진 사파이어 기판 위에 GaN 박막을 OMVPE방식으로 증착시켜 증착된 GaN epilayer를 투과전자현미경으로 분석하여 각 미세구조의 차이를 비교분석하였다. 3 가지 방향 모두에서 GaN 증착층이 관찰되어졌으며 그중 가장 좋은 경계면의 상태와 단일결정성을 보여준 것은 사파이어{0001} 방향의 기판을 사용한 경우였다. 결함들도 {0001} 방향의 기판을 사용한 경우에서 가장 적게 나타났다. 모든 경우에서 buffer layer는 발견되어지지 않았고 그럼에도 불구하고 경계면에서의 격자 뒤틀림이 일어나는 지역이 수 나노미터(nanometer) 정도밖에 안되는 우수한 경계면들이 관찰되었다. 따라서 일반적으로 GaN 박막 증착시에 가장 많이 사용되는 사파이어 basal plane 외에도 결함이 많기는 하지만, {1120}와 {1102} plane 위에도 GaN 증착층이 buffer layer 없이 증착 될 수 있다는 사실을 TEM 관찰을 통하여 알 수 있었으며 사파이어 {0001}면를 기판으로 사용한 경우에 미세구조 측면에서 볼 때 hetero-epitaxial한 GaN 박막층을 얻을 수 있는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Computers and Concrete
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• 제24권3호
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• pp.207-222
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• 2019

This paper has presented an effective and accurate meso-scale finite element model for simulating the fracture process of concrete under compression-shear loading. In the proposed model, concrete is parted into four important phases: aggregates, cement matrix, interfacial transition zone (ITZ), and the initial defects. Aggregate particles were modelled as randomly distributed polygons with a varying size according to the sieve curve developed by Fuller and Thompson. With regard to initial defects, only voids are considered. Cohesive elements with zero thickness are inserted into the initial mesh of cement matrix and along the interface between aggregate and cement matrix to simulate the cracking process of concrete. The constitutive model provided by ABAQUS is modified based on Wang's experiment and used to describe the failure behaviour of cohesive elements. User defined programs for aggregate delivery, cohesive element insertion and modified facture constitutive model are developed based on Python language, and embedded into the commercial FEM package ABAQUS. The effectiveness and accuracy of the proposed model are firstly identified by comparing the numerical results with the experimental ones, and then it is used to investigate the effect of meso-structure on the macro behavior of concrete. The shear strength of concrete under different pressures is also involved in this study, which could provide a reference for the macroscopic simulation of concrete component under shear force.

• 한국재료학회지
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• 제32권9호
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• pp.396-402
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• 2022

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm² and Test was 5.61 × 10 A/cm², which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10¹² cm^-2 in slow state density and 0.41 × 10¹³ cm^-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10¹¹ cm^-2 in slow state density and 1.33 × 10¹² cm^-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

• 한국재료학회지
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• 제4권2호
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• pp.127-135
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• 1994

직접 접합된 Si 기판들의 접합계면에 관하여 연구하였다. 경사 연마 및 결함묘사, 계면의 비등방성 식각, TEM 및 HR-TEM 등의 방법들을 이용하여 접합계면에 발생하는 계면결함과 과도영역, 여러형태의 void 들, 계면 산화막의 형성 및 안정화 과정등을 조사하였다. 또한 접합된 $Si-Sio_{2}$계면과 일반적인 $Si-Sio_{2}$계면의 형상등을 비교 검토하였다.

• 한국세라믹학회지
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• 제49권6호
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• pp.637-641
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• 2012

Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.