• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1273-1275
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• 1998

The main faults at cable joint are mainly originate from double layered structure, which is composed of different kinds of materials such as XLPE/EPDM laminatest. In this paper, to investigate the effect of interfacial condition and coagents on dielectric strength of XLPE/EPDM, we prepared XLPE/grease/EPDM, XLPE/grease + coagent/EPDM laminates. Dielectric strength of the XLPE/EPDM laminates pasted with the grease compounded crosslinking coagent (TMPTA, TMPTMA) is higher than that of the laminates paseted with the grease without coagent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.225-228
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• 1997

The main fault in this interface is that power cable insulating materials are mainly composed of a double layered structure, XLPE/FPDM laminates in cable joint. In this parer, we instituted the interface of XLPE/EPDM laminates and then investigated the breakdown and conduction characteristics as a function of heat treatment time. The results showed that conduction current was influenced by volatile crosslinking by-products which remained inside the insulating material during the production of XLPE and EPDM, especially during heat treatment process. And conduction current of XLPE/Oil 12500cSt/EPDM was more stable than XLPE/Grease/EPDM from the long heat treatment time. AC breakdown strength of silicone oil itself from the heat treatment was changed during the 4∼12 hour heat treatment time.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.2
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• pp.213-218
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• 2013

In this study, epoxy/mica composite was prepared by mixing with mechanical stirrer together with homogenizer, and the effect of amino-type silane coupling agent was also studied. To reduce the viscosity without any decrement of other properties, 1,4-Butanediol diglycidyl ether (1,4-BDGE) as an aliphatic epoxy reactive diluent was introduced to the epoxy/mica composite in order to use as vanish for high voltage motor and generator stator winding. It was confirmed by scanning electron microscopy (SEM) observation that interfacial characteristics between organic epoxy and inorganic mica was modified by coupling agent treatment so that glass transition temperature increased, and tensile strength and electrical breakdown strength increased. The properties were estimated by Weibull statistical analysis and the ac electrical breakdown strength was 20.2% modified by treating silane coupling agent.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.114-119
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• 2005

We investigated compatibilizing effects of electrical properties such as charge distributions and electrical breakdown in blends of low density polyethylene (LDPE) / polystyrene (PS) with poly [styrene-b-(ethylene-co-butylene)-b-styrene] (SEBS), the triblock copolymer. The blends with $70\;wt\%$ of LDPE and $30\;wt\%$ of PS were prepared through a melt blending in a batch type kneader at a temperature of $220^{\circ}C$ when the SEBS content increased up to $10\;wt\%$. Scanning electron microscopy (SEM) was investigated for observation of morphology of LDPE / PS blends increasing SEBS contents. The morphological observation showed that addition of SEBS results in the domain size reduction of the dispersed PS phase and a better interfacial adhesion between LDPE and PS phases. Measurements of space charge distributions for blends was carried out with pulsed electroacoustic (PEA) method. It was possible to observe that the amount of charge storage in the LDPE / PS blends decreased wiか increasing of SEBS content. The location of SEBS at a domain interface enables charges to move from one phase to the other via domain interface and results in a indicative decrease in the amount of space charge for the LDPE / PS blends with SEBS. Electrical breakdown strength of these blends was observed. It was found that the maximum breakdown strength of the blend was 51.55 kV/mm. These results were better than 38.38 kV/mm of LDPE used electrical insulator for cables and were caused by crystalinity of blends. Because the crystalinity of blends were lower than LDPE, electrical breakdown strength of LDPE / PS blends is higher than that of LDPE. We evaluated the possibility of these blends for insulating material substituted LDPE.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1685-1687
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• 2004

초고압 케이블의 절연물질로 널리 사용되고 있는 가교 폴리에틸렌의 전기적 특성은 라멜라 결정 조직의 밀도와 라멜라 조직의 성장방향과 밀접한 관련이 있는 것으로 알려지고 있다. 본 연구에서는 반도전 물질에 계면활성제를 첨가하고, 제조 온도를 제어하여 폴리에틸렌의 미세 조직을 변화시킴으로써, 라멜라 조직이 전기적 특성에 미치는 영향을 분석하였다. 전기적 특성은 절연파괴 전압을 측정하였고, TEM 분석을 통하여 폴리에틸렌의 모폴러지 분석을 하였으며, XRD 분석을 통하여 라멜라 조직의 밀도를 분석하였다.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.232-233
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• 2005

The Surface of semi-conductive silicone rubber was treated by oxygen plasma to improve adhesion and electric performance in joints between insulating and semi-conductive silicone materials. Surface characterizations were assessed using contact angle measurement and Fourier transform infrared spectroscope (FTIR). Adhesion level was understood from T-peel tests between plasma treated semi-conductive and insulating material. Electrical breakdown strength was measured to understand the charge of electrical performance. From the results, the oxygen plasma treatment produces a significant increase in function group of containing oxygen which can be mainly ascribed to the creation of carbonyl groups on the silicone surface from the strength were improved. Therefore it is concluded then plasma treatment leads to decrease voids originating form poor adhesive, and the improve the adhesion in silicone interface. So we could obtain higher electrical design level of silicone material used for electrical apparatus using oxygen plasma treatment.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.75-78
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• 1995

Gas source molecular beam epitaxy have been used in the growth of InAlAsAnGaAs MSM-PD structure, in which InAlAs ultra thin layer was used as Schottky barrier enhancement material. High performance MSM-PDs have been constructed on the grown wafer. High breakdown voltage of >30V, low dark current density of $3pA/\mu \textrm{cm}^2$ at 10V bias and fast transient response of <20ps rise time / <40ps FWHM have been measured, which confirm the results that GSMBE is a superior method for the growth of materials with high layer and interfacial quality, especially for InP based InAIAdInGaAs system.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.