• Title/Summary/Keyword: Interfacial Phenomena

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Carriers Behavior in Metal-Polymer (금속-고분자에서 캐리어의 거동)

  • Kim, Dae-Yeol;Choi, Chung-Seog
    • Proceedings of the KIEE Conference
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    • 2008.09a
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    • pp.227-228
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    • 2008
  • In this paper, the behaviour of charge carriers near the metal/polymer interface and its effects on conduction and breakdown phenomena are discussed. The metal/polymer interface strongly affects tarrier injection space charge formation and breakdown phenomena. Based on their experimental results, the physical backgrounds of the interfacial phenomena are explained.

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A Study on the Flow with Interfacial Phenomena Using VOF Method

  • Baek, J.H.
    • 한국전산유체공학회:학술대회논문집
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    • 2006.10a
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    • pp.9-10
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    • 2006
  • A numerical method for simulating tree surface flows including the surface tension is presented. Numerical scheme is based an a fractional-step method with a finite volume formulation and the interface between liquid and gas is tracked by Volume of Fluid (VOF) method. Piecewise Linear Interface Calculation (PLIC) method is used to reconstruct the interface and the surface tension is considered using a Continuum Surface Force (CSF) model. Several free surface flow phenomena were simulated to show its effectiveness to find such phenomena.

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Carriers Behavior in Metal-Polymer Interface (금속-고분자 계면에서 캐리어의 거동)

  • Lee, Seung-Hoon;Choi, Yong-Sung;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.2313-2314
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    • 2008
  • In this paper, the behaviour of charge carriers near the metal/polymer interface and its effects on conduction and breakdown phenomena are discussed. The metal/polymer interface strongly affects carrier injection, space charge formation and breakdown phenomena. Based on their experimental results, the physical backgrounds of the interfacial phenomena are explained.

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Quantitative Measurement of Nano-scale Force using Atomic Force Microscopy (AFM을 이용한 나노스케일 힘의 정량적 측정)

  • Chung, Koo-Hyun
    • Tribology and Lubricants
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    • v.28 no.2
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    • pp.62-69
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    • 2012
  • Atomic force microscopy (AFM) has been widely utilized as a versatile tool not only for imaging surfaces but also for understanding nano-scale interfacial phenomena. By measuring the responses of the photo detector due to bending and torsion of the cantilever, which are caused by the interactions between the probe and the sample surface, various interfacial phenomena and properties can be explored. One of the challenges faced by AFM researchers originates in the physics of measuring the small forces that act between the probe of a force sensing cantilever and the sample. To understand the interactions between the probe and the sample quantitatively, the force calibration is essential. In this work, the procedures used to calibrate AFM instrumentation for nano-scale force measurement in normal and lateral directions are reviewed.

Electrical Conduction Characteristics of XLPE Film According to Electrode Metals (전극금속재질에 따른 XLPE Film의 전기전도특성)

  • Lee, H.G.;Park, Y.G.;Shin, T.S.;Lim, K.J.;Kim, Y.J.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1419-1421
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    • 1998
  • Many kind of factors have influence on the electrical properties of polymer such as mechanical stress, impurity, additives, chemical blend, interfacial phenomena and so on. In this study, we lay emphasis on interfacial phenomena which is important part in insulating design of power cable. The electrical conduction characteristics of XLPE film are investigated as a function of different electrode materials in MIM Interfaces.

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Interfacial Structures and Activation Processes of Doped Si Semiconductors (Doping된 Si반도체의 계면구조와 활성화과정)

  • Chun, Jang-Ho
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.7
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    • pp.1042-1048
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    • 1990
  • The approximations of charge relationships at normally doped semiconductor interfaces were qualitatively derived basis on electrical neutrality conditions. Effects of ion adsorptions, activation processes, interfacial structures, rectifying phenomena, and effects of surface potential barriers at the p- and n-Si/CsNO3 aqueous electrolytes, and the p-Si/(1HF:3HNO3:6H2O) electrolyte solutions were investigated using a cyclic voltammetric method. The space charge acts the most important role for the pn junction structures, the rectifying phenomena, and the activation processes. The Current-Voltage (I-V) characteristics curves significantly depend on developing of the Helmholtz double layers and charging of the show surface states during the activation processes. A linear Current-Voltage characteristics region was observed at the p-Si/(1HF:3HNO3: 6H2O) electrolyte solution interface.

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Clad강의 debonding 현상에 대한 연구 2

  • 윤중근;김희진
    • Journal of Welding and Joining
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    • v.5 no.4
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    • pp.22-27
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    • 1987
  • The debonding of clad steel was often occurred at interface between stainless steel and carbon steel during the fabrication of pressure vessel. In order to clarify the causes of debonding phenomena, the fabrication sequences were fully analyzed. As a result, possible factors were noticed for causing the debonding of clad steel, that is, thermal treatment on weldment and welding. Moreover the existence of hydrogen diffused from surroundings also expedites the debonding of clad steel. In this stud, the effect of welding thermal cycle, hydrogen and mixed condition under thermal treatment on the interfacial strength of clad steel were investigated to understand the debonding mechanism of clad steel. From this study, it has been confirmed that the interfacial strength of clad steel was remarkablely deteriorated due to welding and/or existence of hydrogen under thermal treatment. In the case of welding thermal cycle effect, the higher temperature at interface experienced by welding, the more reduction in interfacial strength of clad steel resulted in. And the existence of diffusible hydrogen also reduced the interfacial strength. It is also found that the interfacial strength of clad steel became much lower value than that of the as-received plate under coexistence of above mentioned factors.

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