• 산업공학
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• 제20권4호
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• pp.539-546
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• 2007

This study has been conducted on touch screen interface design for mobile devices. It was intended to measure user’s satisfaction on one-handed thumb input mobile devices. Recent studies proposed the optimal touch button size, but it is inappropriate for mobile devices. Therefore, this study was focused on four touch key factors-width, height, the horizontal and vertical distance between touch keys-as independent variables. The ANOVA results showed that the user satisfaction of four touch key factors was significantly affected by the thumb input. It also apparent that the interactions between four factors were significant. As a result, the horizontal and vertical distance as well as the width and height affected the satisfaction of users. In addition, this study suggested satisfaction models which represent the top 30%, 50%, 70% of user satisfaction measurement. The results of this study could be used to design touch keys that are able to enhance the usability on touch screen based mobile devices.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.542-550
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• 1996

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.209.2-209.2
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• 2015

Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.177-185
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• 2005

Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.266-270
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• 2011

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.492-499
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• 2013

We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

• 대한치과보철학회지
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• 제44권1호
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• pp.85-102
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• 2006

Statement of problem: Currently, there are some 20 different geometric variations in implant/abutment interface available. The geometry is important because it is one of the primary determinants of joint strength, joint stability, locational and rotational stability. Purpose: As the effects of the various implant-abutment connections and the prosthesis height variation on stress distribution are not yet examined this study is to focus on the different types of implant-abutment connection and the prosthesis height using three dimensional finite element analysis. Material and method. The models were constructed with ITI, 3i TG, Bicon, Frialit-2 fixtures and solid abutment, TG post, Bicon post, EstheticBase abutment respectively. And the super structures were constructed as mandibular second premolar shapes with 8.5 mm, 11 mm, 13.5 mm of crown height. In each model, 244 N of vertical load and 244 N of $30^{\circ}$ oblique load were placed on the central pit of an occlusal surface. von Mises stresses were recorded and compared in the crowns, abutments, fixtures. Results: 1. Under the oblique loading, von Mises stresses were larger in the crown, abutment, fixture compared to the vertical loading condition. 2. The stresses were increased proportionally to the crown height under oblique loading but showed little differences with three different crown heights under vertical loading. 3. In the crown, the highest stress areas were loading points under vertical loading, and the finish lines under oblique loading. 4. Under the oblique loading, the higher stresses were located in the fixture/abutment interface of the Bicon and Frialit-2 systems compared to the ITI and TG systems. Conclusions: The stress distribution patterns of each implant-abutment system had difference among them and adequate crown height/implant ratio was important to reduce the stresses around the implants.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1999년도 제29회 춘계학술대회
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• pp.53-60
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• 1999

As the flying height decreased, it is essential that hard disk drives perform reliable under various environmental conditions. In this paper the tribological characteristics of a head/disk interface are investigated under various temperature, relative humidity, altitude and outgas conditions. Specially, Contact-Start-Stop(CSS) tests were performed to assess the stiction, acoustic emission, slider take-off behavior, and track average amplitude(TAA). It is shown that the surface damage and head failure are accelerated by high temperature and humidity as well as low ambient pressure.

• Journal of Welding and Joining
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• 제3권2호
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• pp.27-34
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• 1985

The mechanical properties and bonding mechanism of aluminum, copper and mild steel have been determined in cold pressure welding. The brittle cover layer to be established by scratch-brushing plays an important role in bond strength and has an influence on the threshold of deformation. The cold pressure welding was achieved at 54% of height reduction in A1-A1, 75% in Cu-Cu, 56% in Al-Cu, and 74% in Cu-steel. The height reduction at which the bond strength of weld interface was the same as the tensile strength of base metal should be over 76% in Al-Al, 82% in Cu-Cu, and 78% in Al-Cu.