• Title/Summary/Keyword: Inter Electrode Gap

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Fabrication and Characteristics of Lateral Type Field Emitter Arrays

  • Lee, Jae-Hoon;Kwon, Ki-Rock;Lee, Myoung-Bok;Hahm, Sung-Ho;Park, Kyu-Man;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.2
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    • pp.93-101
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    • 2002
  • We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

Measurement of Electron Temperature and Number Density and Their Effects on Reactive Species Formation in a DC Underwater Capillary Discharge

  • Ahmed, Muhammad Waqar;Rahman, Md. Shahinur;Choi, Sooseok;Shaislamov, Ulugbek;Yang, Jong-Keun;Suresh, Rai;Lee, Heon-Ju
    • Applied Science and Convergence Technology
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    • v.26 no.5
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    • pp.118-128
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    • 2017
  • The scope of this work is to determine and compare the effect of electron temperature ($T_e$) and number density ($N_e$) on the yield rate and concentration of reactive chemical species ($^{\bullet}OH$, $H_2O_2$ and $O_3$) in an argon, air and oxygen injected negative DC (0-4 kV) capillary discharge with water flow(0.1 L/min). The discharge was created between tungsten pin-to pin electrodes (${\Phi}=0.5mm$) separated by a variable distance (1-2 mm) in a quartz capillary tube (2 mm inner diameter, 4 mm outer diameter), with various gas injection rates (100-800 sccm). Optical emission spectroscopy (OES) of the hydrogen Balmer lines was carried out to investigate the line shapes and intensities as functions of the discharge parameters such as the type of gas, gas injection rate and inter electrode gap distances. The intensity ratio method was used to calculate $T_e$ and Stark broadening of Balmer ${\beta}$ lines was adopted to determine $N_e$. The effects of $T_e$ and $N_e$ on the reactive chemical species formation were evaluated and presented. The enhancement in yield rate of reactive chemical species was revealed at the higher electron temperature, higher gas injection rates, higher discharge power and larger inter-electrode gap. The discharge with oxygen injection was the most effective one for increasing the reactive chemical species concentration. The formation of reactive chemical species was shown more directly related to $T_e$ than $N_e$ in a flowing water gas injected negative DC capillary discharge.

Fabrication and Electrical Characteristics of a Lateral type GaN Field Emission Diode

  • Lee, Jae-Hoon;Lee, Hyung-Ju;Lee, Myoung-Bok;Hahm, Sung-Ho;Lee, Jung-Hee;Choi, Kue-Man
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.647-650
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    • 2002
  • A lateral type GaN field emission diodes were fabricated by utilizing metal organic chemical vapor deposition (MOCVD). In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for 7 ${\mu}m$ gap and an emission current of ${\sim}580$ nA/10tips at anode-to-cathode voltage of 100 V These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance.

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Electrical Compound Action Potential: Effects of different parameters (전기 자극 청신경 복합활동전위: 변인 영향)

  • Heo, S.D.
    • Journal of rehabilitation welfare engineering & assistive technology
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    • v.8 no.1
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    • pp.9-17
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    • 2014
  • Electrical compound action potential (ECAP) can be recorded on cochlear implant. This study will investigate stimulation and recording to enhance the efficacy of ECAP. 34 articles was used. We analyzed pulse and stimulating condition, artifact suppression, recording condition. The cathod-leading biphasic pulse was used with as short as possible pulse width and inter phase gap for the efficacy of neural firing, stable threshold and preventing neural degeneration. Around C-level was stimulated to apical, middle and basal turn of cochlea. Artifact was eliminated by forward-masking, template-subtraction technique. For clearer waveform, we need to change distance between stimulating and recording electrode, the gain of amplification, number of average.

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Numerical Modeling of Very High Frequency Multi Hollow Cathode PECVD (Very High Frequency Multi Hollow Cathode PECVD 장치의 수치모델링)

  • Joo, Jung-Hoon
    • Journal of the Korean Vacuum Society
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    • v.19 no.5
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    • pp.331-340
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    • 2010
  • 3D fluid based numerical modelling is done for a VHF multi hollow cathode array plasma enhanced chemical vapor deposition system. In order to understand the fundamental characteristics of it, Ar plasma is analyzed with a condition of 40 MHz, 100 Vrf and 1 Torr. For hole array of 6 mm diameter and 20 mm inter-hole distance, plasma is well confined within the hole at an electrode gap of 10 mm. The peak plasma density was $5{\times}10^{11}#/cm^3$ at the center of the hole. When the substrate was assumed at ground potential, electron temperature showed a peak at the vicinity of the grounded walls including the substrate and chamber walls. The reaction rate of metastable based two step ionization was 10 times higher than the direct electron impact ionization at this condition. For $H_2$, the spatial localization of discharge is harder to get than Ar due to various pathways of electron impact reactions other than ionization.

Understanding of Non-Thermal Atmospheric Pressure Plasma Characteristics Produced in Parallel Plate Type Geometry

  • Choe, Wonho;Moon, Se Youn;Kim, Dan Bee;Jung, Heesoo;Rhee, Jun Kyu;Gweon, Bomi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.144-144
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    • 2013
  • Non-thermal atmospheric pressure plasmas have recently garnered much attention due to their unique physical and chemical properties that are sometimes significantly different from those of low pressure plasmas. It can offer many possible application areas including nano and bio/medical areas. Many different types of plasma sources have been developed for specific needs, which can be one of the important merits of the atmospheric pressure plasmas since characteristics of the produced plasma depend significantly on operating parameters such as driving frequency, supply gas type, driving voltage waveform, gas flow rate, gas composition, geometrical factor etc. Among many source configurations, parallel plate type geometry is one of the simplest configurations so that it can offer many insights for understanding basic underlying physics. Traditionally, the parallel plate type set up has been studied actively for understanding low pressure plasma physics along with extensive employment in industries for the same reason. By considering that understanding basic physics, in conjunction with plasma-surface interactions especially for nano & bio materials, should be pursued in parallel with applications, we investigated atmospheric pressure discharge characteristics in a parallel plate type capacitive discharge source with two parallel copper electrodes of 60 mm in diameter and several millimeters in gap distance. In this presentation, some plasma characteristics by varying many operating variables such as inter-electrode distance, gas pressure, gas composition, driving frequency etc will be discussed. The results may be utilized for plasma control for widening application flexibility.

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Evaluation of Machining Characteristics and Performance Analysis of Air-Lubricated Dynamic Bearing (공기동압베어링의 성능 해석 및 가공특성 평가)

  • Baek, Seung-Yub;Kim, Kwang-Lae
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.12
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    • pp.5412-5419
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    • 2011
  • The need is growing for high-speed spindle because various equipment are becoming more precise, miniaturization and high speed with the development of industries. Air-lubricated dynamic bearings are widely used in the optical lithographic manufacturing of wafers to realize nearly zero friction for the motion of the stage. Air-lubricated dynamic bearing can be used in high-speed, high-precision spindle system and hard disk drive(HDD) because of its advantages such as low frictional loss, low heat generation, averaging effect leading better running accuracy. In the paper, numerical analysis is undertaken to calculate the performance of air-lubricated dynamic bearing with herringbone groove. The static performances of herringbone groove bearings which can be used to support the thrust load are calculated. Electrochemical micro machining($EC{\mu}M$) which is non-contact ultra precision machining method has been developed to fabricate the air-lubricated dynamic bearing and optimum parameters which are inter electrode gap size, concentration of electrolyte, machining time are simulated using numerical analysis program.

Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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Development of an Improved Numerical Methodology for Design and Modification of Large Area Plasma Processing Chamber

  • Kim, Ho-Jun;Lee, Seung-Mu;Won, Je-Hyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.221-221
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    • 2014
  • The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

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