• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.728-732
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• 2014

Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.196-203
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• 2004

A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.

• Journal of information and communication convergence engineering
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• v.14 no.4
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• pp.268-271
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• 2016

An efficient inductive switching noise suppression technique for mixed-signal integrated circuits (ICs) using standard CMOS digital technology is proposed. The proposed design technique uses a parallel RC circuit, which provides a damping path for the switching noise. The proposed design technique is used for designing a mixed-signal circuit composed of a ring oscillator, a digital output buffer, and an analog noise sensor node for $0.13-{\mu}m$ CMOS digital IC technology. Simulation results show a 47% reduction in the on-chip inductive switching noise coupling from the noisy digital to the analog blocks in the same substrate without an additional propagation delay. The increased power consumption due to the damping resistor is only 67% of that of the conventional source damping technique. This design can be widely used for any kind of analog and high frequency digital mixed-signal circuits in CMOS technology

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.783-793
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• 1997

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.4
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• pp.103-109
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• 2015

This paper presents the development of a ROM writer for shmoo test of a flash memory integrated into the MCU(Micro Controller Unit). A shmoo test is a graphical display of the response of a component or system varying over a range of conditions and inputs. Often used to represent the results of the testing of complex electronic systems such as computers or integrated circuits such as DRAMs, ASICs or microprocessors. A shmoo test and data write time(32k) of the development ROM writer is 6.4 seconds, which was improved by about 20% compared to the rate of the currently used ROM writer.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.269-274
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• 1999

As the semiconductor industry enters the next century, we are facing to the technological changes and challenges. Optical lithography has driven by the miniaturisation of semiconductor devices and has been accompanied by an increase in wafer productivity and performance through the reduction of the IC image geometries. In the last decade, DRAM(Dynamic Random Access Memories) have been quadrupoling in level of integration every two years. Korean chip makers have been produced the memory devices, mainly DRAM, which are the driving force of IC＇s(Integrated Circuits) development and are the technology indicator for advanced manufacturing. Therefore, Korean chip makers have an important position to predict and lead the patterning technology. In this paper, we will be discussed the limitations of the optical lithography, such as KrF and ArF. And, post optical lithography technology, such as E-beam lithography, EUV and E-beam Projection Lithography shall be introduced.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.52-58
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• 2006

Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.4
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• pp.180-186
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• 2002

This paper describes on the development of power detection system with one-chip microcontroller. The designed system is composed of power detection circuits and analyzing software. The system detects, 3-phases voltage, 3-phases current, external temperature, leakage current and stores in flash memory. AT89C52 was used as CPU and AM29F040B was used as memory to store the data. The analysis saftware was developed to detect the cause of the electrical fire incidents. With a data-compression technology, the data can be stored for the 43.5 days in a normal state, four hours and fifteen minutes in emergency state.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.10
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• pp.1559-1562
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• 2022

As electronic devices technology scales down into the deep-submicron to achieve high-density, low power and high performance integrated circuits, multiple bit upsets by soft errors have become a major threat to on-chip memory systems. To address the soft error problem, single error correction, double error detection and double adjacent error correction (SEC-DED-DAEC) codes have been recently proposed. But these codes do not troubleshoot mis-correction problem. We propose the SEC-DED_DAEC code with without mis-correction. The decoder for proposed code is implemented as hardware and verified. The results show that there is no mis-correction in the proposed codes and the decoder can be employed on-chip memory system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.11
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• pp.1747-1750
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• 2022

As shrinking the semiconductor process into the deep sub-micron to achieve high-density, low power and high performance integrated circuits, MBU (multiple bit upset) by soft errors is one of the major challenge of on-chip memory systems. To address the MBU, single error correction, double error detection and double adjacent error correction (SEC-DED-DAEC) codes have been recently proposed. But these codes do not resolve mis-correction. We propose the SEC-DED-DAEC-TAED(triple adjacent error detection) code without mis-corrections. The generated H-matrix by the proposed heuristic algorithm to accomplish the proposed code is implemented as hardware and verified. The results show that there is no mis-correction in the proposed codes and the 2-stage pipelined decoder can be employed on-chip memory system.