• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.559-562
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• 2004

A 2.2-inch QCIF+ $(176{\times}RGB{\times}220)$ TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature $({\sim}-20^{\circ}C)$, the integrated row driver operation is dramatically effected by the electron drift mobility variation $({\sim}50%)$ and the threshold voltage shift $({\sim}1V)$ of the a-Si TFT. We studied the temperature dependency of the circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.11
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• pp.1164-1169
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• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.

• Journal of Information Display
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• v.2 no.2
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• pp.1-6
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• 2001

A $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with a new integrated 8-bit parallel-serial digital data driver was proposed and designed. For high resolution, the proposed parallel-serial digital driver used serial video data rather than parallel ones. Thus, digital circuits for driving one column line could be integrated within very small width. The parallel-serial digital data driver comprised of shift registers, latches, and serial digital-to-analog converters (DAC's). We designed a $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with integrated 8-bit parallel-serial digital data drivers by a circuit simulator which has physical-based analytical model of poly-Si TFT's. The fabricated shift register well operated at 2 MHz and $V_{DD}$=10V and the fabricated poly-Si TFT serial DAC's, which converts serial digital data to an analog signal, could convert one bit within $2.8{\mu}s$. The driver circuits for one data line occupied $8100{\times}50{\mu}m^2$ with $4{\mu}m$ design rule.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.68-72
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• 2020

A new method for array testing of TFT-CD panel with the integrated gate driver circuits is presented. As larger size/high resolution TFT-LCD with the peripheral driver circuits has emerged, one of the important problems for manufacturing is array testing on the panel. This paper describes the technology of detecting defective arrays and optimizing the array testing process. For the effective characterization of pixel array, the pixel storage capability is simulated and measured with voltage imaging system. This technology permits full functional testing during the manufacturing process, enabling fabrication of large TFT-LCD panels with the integrated driver circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.264-268
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• 2005

A 2.2-inch QCIF+(176${\times}$RGB${\times}$220) TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature, the integrated row driver operation is dramatically effected by the electron drift mobility reduction(■50 %) and the threshold voltage shift (■1V) of the a-Si TFT. We studied the dependency of circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1176-1178
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• 2007

A novel integrated a-Si:H gate driver with high reliability has been designed and simulated. Since the a-Si:H TFT is easily degraded by gate bias stress, we should optimize the circuit considering the threshold voltage shift. The conventional circuit shows voltage drop at the input stage by threshold voltage of the TFT, however, the proposed circuit dose not shows voltage drop and keeps constant regardless of threshold voltage shift of the TFT.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.583-586
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• 2009

A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1009-1012
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• 2008

We have succeeded in producing the world $1^{st}$ TFT LCD panel adapting the data line sharing method. In the data line sharing structure, two neighboring pixels share one data line. We also adapted time shared data driving with a-Si TFT based circuit integration technology of LG Display's own. By using these technologies, we can reduce the number of source driver ICs by half, compared to that of the existing gate driver integrated TFT LCD panel.

• Journal of Information Display
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• v.7 no.3
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• pp.5-8
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• 2006

A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two modes, "wake" and "sleep". The degradation of the circuit is retarded because the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.822-824
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• 2007

This paper investigated a gate driver circuit with amorphous silicon for mobile TFT-LCD. In the conventional circuit, the fluctuation of the off-state voltage causes the fluctuation of gate line voltages in the panel and then image quality becomes worse. Newly designed gate driver circuit with dynamic switching inverter and carry out signal reduce the fluctuation of the off-state voltage because dynamic switching inverter is holding the off-state voltage and the delay of carry signal is reduced. The simulation results show that the proposed a-Si:H gate driver has low noise and high stability compared with the conventional one.