• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.779-787
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• 2010

In this paper, We introduce electrical tracking generated from surface activity associated with flow of leakage current on insulator under wet and contaminated conditions and design electrical tracking pattern recognition system by using LabVIEW. We measure the leaking current of contaminated wire by using LabVIEW software and the NI-c-DAQ 9172 and NI-9239 hardware. As pattern recognition algorithm and optimization algorithm for electrical tracking system, neural networks, Radial Basis Function Neural Networks(RBFNNs) and particle swarm optimization are exploited. The designed electrical tracking recognition system consists of two parts such as the hardware part of electrical tracking generator, the NI-c-DAQ 9172 and NI-9239 hardware and the software part of LabVIEW block diagram, LabVIEW front panel and pattern recognition-related application software. The electrical tracking system decides whether electrical tracking generate or not on electrical wire.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.170-177
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• 2008

In the present work a methodology to minimize short channel effects (SCEs) by modulating the effective channel length is proposed to design 25 nm single and double gate-source/drain underlap MOSFETs. The analysis is based on the evaluation of the ratio of effective channel length to natural/ characteristic length. Our results show that for this ratio to be greater than 2, steeper source/drain doping gradients along with wider source/drain roll-off widths will be required for both devices. In order to enhance short channel immunity, the ratio of source/drain roll-off width to lateral straggle should be greater than 2 for a wide range of source/drain doping gradients.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.38-42
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• 2003

HTS transformer is promising one of HTS power applications to be commercialized in the near future. To realize the applications, insulation technology in the coolant, liquid nitrogen, should be established. So breakdown characteristics should be considered at insulation components; turn-to-turn, layer-to-layer, winding-to-winding, were investigated. Firstly breakdown strengths of Kapton films were compared with Kraft paper these are as turn insulator. And next the characteristics of surface flashover on FRP were measured and the influence on breakdown strength of bubble generated with joule heat was discussed with the shape of cooling channel between layers. Finally barrier effect at winding-to-winding was discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.6-10
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• 2003

In our country, the housing materials of polymeric outdoor insulators have mainly been used EPDM or silicone rubber. EPDM housing materials had been widely used in the field for the first time. The reason why silicone has the high cost of production. But recently, most of the manufacturers that newly developed polymeric insulators make its choice of silicone housing. EPDM showed a good resistance to tracking. We compared the various characteristics for EPDM and silicone insulators that have similar type and design. Silicone insulators have more performance in flashover voltage test and leakage current measurement because of a good water repellent than EPDM ones. Also, the property of EPDM compared with silicone insulators greatly decreased after aging test in combined acceleration ageing facilities for 1000 hours.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.291-294
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• 2013

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.12-19
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• 1993

Because of their high sensitivity and moderate bandwidth, superconducting receivers with SIS (Superconductor Insulator Superconductor) tunnel junction mixer are now widely used for millimeter wave radio astronomy. In this paper we have introduced how to determine the parameters of SIS tunnel junction which have to be optimized to achieve a good mixer performance. From these results of optimized junction parameters determined by this methods, SIS junctions which consist of a series array of four Nb/Al-AlOx/Nb junctions with each area 3.4${\mu}m^{2}$ have been fabricated by SNEP (Selective Niobium Etching Process) and RIE (Reactive Ion Eching). Also we have tested their DC current-voltage characteristics. These SIS junctions will be used as a mixer for 100GHz band cosmic waves receiver.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2001.02a
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• pp.189-192
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• 2001

In order to design thermally trigger controlled persistent current switch (PCS) for superconducting magnet system, it is very important to know information of applied adiabatic method and condition to get designed resistance and characteristics In this paper, we used cotton-gummed tape as thermal insulator and derived experimentally averaged thermal conductivity of it around 10K on the assumption that adiabatic structure of PCS is shape of pipe. The result value is about 0.29 W/mK and it is verified reasonable value by computer simulation and experiment of test PCS. Test PCS was designed and manufactured different dimensions. The experimental results of test PCS were in good agreement with the calculated results.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.895-898
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• 1999

Recently, small signal modeling of CMOS device becomes more difficult because the design rule goes into deep submicron. De-embedding of substrate parameters is important in order to use CMOS devices at RF frequencies. In this paper, we suggest a new de-embedding model with refined physical meaning and accuracy. In GaAs IC’s, the substrate is almost an insulator but Si substrate has the semiconducting characteristics. It offers some troubles if it is treated like GaAs substrate. The conducting substrate is modeled with five resistances, which leads to very accurate modeling so long as the pad layout is symmetrical. Frequency range is up to 39㎓ and fitting accuracy is as small as 0.00037 on least square errors.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.93-98
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• 2000

Drive line shape for reflective magneto-optic spatial light modulator has been designed by computer simulation. A factor of 3 improvement in pixel switching sensitivity and power consumption, compared to the conventional reflective magneto-optic spatial light modulator, has been achieved by the use of wedge-shape drive line and a soft magnetic layer. A factor of 2 higher optical efficiency and a factor of 2 simpler fabrication process have been achieved by the use of drive lines that covers most of the surface of pixel and unpatterned insulator.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.