• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.12 no.1
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• pp.45-53
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• 2006

Thermal insulation is used in a variety of applications to protect temperature sensitive products from thermal damage. Several factors affect the performance of insulation packages. Among these factors, the thermal resistance of the insulating wall is the most important factor to determine the performance of the insulating package. In many cases, insulating wall consists of multi-layered structure and the heat transfer through this structure is a very complex process. In this study, an one-dimensional mathematical model, which includes all of the heat transfer principles covering conduction, convection and radiation in multi-layered structure, were developed. Based on this model, several heat transfer phenomena occurred in the air space between the layer of the insulating wall were investigated. From the simulation results, it was observed that the heat transfer through the air space between the layer were dominated by conduction and radiation and the low emissivity of the surface of each solid layer of the wall can dramatically increase the thermal resistance of the wall. For practical use, an equation was derived for the calculation of the thermal resistance of a multi-layered wall.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2002.05a
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• pp.21-26
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• 2002

This paper is intended to verify the efficiency of anti-freeze agent and insulating form by analyzing the temperature history and the property of strength-increase about the concrete that is placed in the insulating form and normal form, using new type anti-freeze agent in batcher plant According to the results about the temperature history, while the lowest temperature shows 3$^{\circ}C$ in case of normal concrete + euroform, 4$^{\circ}C$ in case of normal concrete + insulating form, it shows 6$^{\circ}C$ in anti-freeze agent + the insulating form, so the effect is most favorable. The compressive strength with mixing anti-freeze agent or not, shows high in order of standard curing, structure-managing and open air-placed specimen and the concrete mixing anti-freeze agent shows the highest compressive strength-increase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.347-349
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• 1999

We have fabricated insulating thin films using p-hexadecoxyphenol(p-Hp) that was formed phenol-formaldehyde resin of crosslinked structure from reaction with formaldehyde by LB technique. For fabricated MIM device, the possibility for insulating layers of electronic were investigated by electrical properties of their LB films according to crosslinking of LB films current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. We have provided evidence for the high insulating performance of phenol-formaldehyde thin films by the LB method. Conductivity of their LB films was as follows: pure water > 1 % aq. Formaldehyde > heat treatment, in the current-voltage (I-V) characteristics. It is demonstrated that insulation properties of crosslinked p-HP LB films were improved. In capacitance-frequency properties, the heat-treated p-HP LB films for crosslinking showed a low relative dielectric constant.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.541-542
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• 2009

We have developed an image reversal photoresist with high thermal stability and electric insulating properties for the single isolation structure of OLEDs. The thermal stability and electric insulating properties are investigated and compared with those of conventional insulator and cathode separator materials. The single isolation structure using the image reversal photoresist reduces the fabrication process steps and cuts down the manufacturing cost.

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• 전기의세계
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• v.20 no.2
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• pp.27-31
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• 1971

Using insulating paper (cellophan), we measured the influences of moisture abosrbed for electrical properties i.e. V.I curves which result in deteriorating due to the moisture alsorbed is related to electrical properties Considerally due to the electrolytic effects of moisture involved cellulose Gel structure, we obtained also an evaluation method of deterioration rate Caused by the moisture absorbed in insulating papers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.878-881
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• 2001

In this paper, we analyzed the characteristics of insulating material with ELB(earth leakage circuit breaker) through tracking experiment and the study was carried out three different types of samples. The tracking is breakdown phenomenon of material surface that is generated on the organic insulating material. The test method applied IEC publication 587. The result of the sample breakdown by tracking was carbonized and resistance of between the electrodes is approximately 300$\Omega$. In the result of DSC analysis, the caloric peak was detected before 100$^{\circ}C$ in product of tracking. It appeared weight loss of 10.87% at 537$^{\circ}C$ on TGA. IR spectrum analysis showed carbon-hydrogen(C-H)bond on molecular structure that is the sample of tracking.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.4
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• pp.35-40
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• 1975

The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

• Proceedings of the Korea Concrete Institute Conference
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• 2002.05a
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• pp.663-668
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• 2002

In this paper, insulating effects and strength development of concrete placed at mock up model structure are discussed using anti freezing agent and insulating forms. According to test results, concrete containing 8% of anti freezing agent shows lower freezing temperature, earlier setting time and higher strength development than plain concrete. As for the temperature history of mock up structures, when plain concrete is placed at euro form, the temperature drops to -4${\circ}$ before early 24 hours, and when concrete containing anti freeze agent at euro form, it to -3${\circ}$ before early 24 hours. Nevertheless, when concrete containing anti freeze agent is placed at insulating form, it does not go below zero, and the concrete containing anti freeze agent enhances higher strength development.