• Korean Journal of Optics and Photonics
• /
• v.10 no.4
• /
• pp.342-347
• /
• 1999

As the waveguide width and the radius of curvature get smaller for the effort of monolithic fabrication of integrated photonic devices, the waveguide characteristics change significantly according to the change of the waveguide width or the radius of curvature. Especially, variation of the waveguide width due to fabrication process errors induces a phase error for each waveguide from the change of the propagation constant. Therefore, it is important to quantify these variation effects on the device characteristics for the design and fabrication of highly integrated photonic devices. Here, we analyze four different types of waveguides to get general characteristics in propagation constant change by utilizing the effective index method and the analytic solution method. Futhermore, the output characteristics of two AWG(Arrayed Waveguide Grating) devices are simulated by a highly-functional computer code. The simulated results have been found to be similar to the realistic device characteristics. The required fabrication error limit for the ridge-type InP-AWG device should be smaller than 0.02 ${\mu}{\textrm}{m}$ to get better channel crosstalk than-25 dB, while the required fabrication error limit for rib-type silica-AWG devices may be allowed up to 0.1 ${\mu}{\textrm}{m}$ to obtain better crosstalk than -30 dB.

• Korean Journal of Materials Research
• /
• v.8 no.10
• /
• pp.890-897
• /
• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Geotechnical Engineering
• /
• v.14 no.5
• /
• pp.89-110
• /
• 1998

Variations of backfill load on the metal-polyethylene composite( MPC ) pipes buried in various trenches backfill afterward were investigated in this paper. The backfill loads obtained by the finite element method( FBM ) were compared with those calculated by the well-known MarstonBpangler(M-5) theory. The reliability of the finite element analysis used in this study was examined by an inaitu best for the buried pipe. The backfill lords and deflections on the real-size pipe buried on-site were measured while increasing the backfill height. In addition, further investigations were made for the variations of the backfill loads as a function of several important parameters such as the backfill soil type, bach. height$(\leq4.0m)$, diameter of the pipe$(B.$1.0m)$, and trench width($\leq 3.0 B_c$). It is confirmed that the M-S theory predicts reasonably well the backfill loafs of the MPC of the M-S backfill coils be 0.13 and 0.15 for the SC and SM coils in the D unman soil model, respectively. The load ratio, Wu-s/WwgM for a narrow trench varies negligibly with the back(111 height but fiends to increase for a wide trench. The ratio increases with increasing diameter of the pipe for a narrow trench while decreasing for a wide trench. It is also found that the ratio generally decreases as the degree of compaction increases and BM soil exhibits larger load ratio than that of SC soil.