• Title/Summary/Keyword: Inner conductive film

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Study on the Surface Electric Resistance for Inner COnductive Film in CRT Funnel (브라운관 Funnel Glass 내면의 흑연피막의 표면전기저항에 관한 연구)

  • 김상문;김태옥;신학기
    • Journal of the Korean Ceramic Society
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    • v.35 no.11
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    • pp.1155-1161
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    • 1998
  • We have studyed the surface electric resistiance for inner conductive film consisted of graphite and iron oxide by coating the conductive paint on inner face of 28" wide CRT funnel and have evaluated the working properties of 28" wide CRT according to the surface electric resistiance. We found that the viscosity of paint and the thickness of conductive film became the higher but the surface electric resistiance of con-ductive films was the lower than before in accordance with the increase of solid contents in conductive paint and that the surface condition and the surface electric resistiance of conductive films changed highly ac-cording to the drying conditions also. From these results we could get the uniform thickness and the un-iform film resistance and the optimum working property of selectric propertise in CRT when we used the conductive paint with solid contents 28% and viscosity about 13cps.

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FCCL 제작 시 Cu Sputter 조건에 따른 Through Hole 특성 연구

  • Kim, Sang-Ho;Yun, Yeo-Wan
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.15-16
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    • 2008
  • In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

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Electrical Characterization of Nanoscale $Au/TiO_2$ Schottky Diodes Probed with Conductive Atomic Force Microscopy

  • Lee, Hyunsoo;Van, Trong Nghia;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.290.1-290.1
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    • 2013
  • The electrical characterization of Au islands on TiO2 at nanometer scale (as a Schottky nanodiode) has been studied with conductive atomic force microscopy in ultra-high vacuum. The diverse sizes of the Au islands were formed by using self-assembled patterns on n-type TiO2 semiconductor film using the Langmuir-Blodgett process. Local conductance images showing the current flowing through the TiN coated AFM probe to the surface of the Au islands on TiO2 was simultaneously obtained with topography, while a positive sample bias is applied. The boundary of the Au islands revealed a higher current flow than that of the inner Au islands in current AFM images, with the forward bias presumably due to the surface plasmon resonance. The nanoscale Schottky barrier height of the Au/TiO2 Schottky nanodiode was obtained by fitting the I-V curve to the thermionic emission equation. The local resistance of the Au/TiO2 nanodiode appeared to be higher at the larger Au islands than at the smaller islands. The results suggest that conductive atomic force microscopy can be used to reveal the I-V characterization of metal size dependence and the electrical effects of surface plasmon on a metal-semiconductor Schottky diode at nanometer scale.

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Analysis of Wireless Signal Strength in Indoor Environment with Film-Type Dual-Band Frequency Selective Structure (필름형 이중 대역 주파수 선택 구조가 적용된 실내 환경의 무선신호강도 분석)

  • Cho, Sung-Sil;Lee, Sang-Hwa;Yoon, Sun-Hong;Hong, Ic-Pyo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.1
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    • pp.1-9
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    • 2018
  • In this paper, we propose a film-type dual-band frequency selective structure for improving the wireless communication environment in a building. The proposed frequency-selective structure is a miniaturized structure that can control the resonant frequencies of 2.4 GHz and 5 GHz dual band through simple design parameters. We fabricated the frequency-selective surface by screen printing using conductive ink on a thin transparent film and confirmed its performance by measurement. We analyzed the attenuation performance of the unnecessary signal from the outside when the frequency-selective structure designed using the software to analyze the propagation environment performance is applied to the building. To verify the analytical results, the signal strength of the indoor environment was measured by applying the frequency-selective film fabricated on the inner wall of the actual building. The measurement results show that the dual-band frequency-selective film has 29.4 dB and 15.94 dB attenuation performance in the 2.4 GHz and 5 GHz, respectively.