• Title/Summary/Keyword: Inductor-less

Search Result 88, Processing Time 0.026 seconds

Inductor-less 6~18 GHz 7-Bit 28 dB Variable Attenuator Using 0.18 μm CMOS Technology (0.18 μm CMOS 기반 인덕터를 사용하지 않는 6~18 GHz 7-Bit 28 dB 가변 신호 감쇠기)

  • Na, Yun-Sik;Lee, Sanghoon;Kim, Jaeduk;Lee, Wangyoung;Lee, Changhoon;Lee, Sungho;Seo, Munkyo;Lee, Sung Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.27 no.1
    • /
    • pp.60-68
    • /
    • 2016
  • This paper presents a 6~18 GHz 7-bit digital-controlled attenuator. The proposed attenuator is based on switched-T architecture, but no inductor is used for minimum chip size. The designed attenuator was fabricated using $0.18{\mu}m$ CMOS process, and characterized using on-wafer testing setup. The resolution(minimum attenuation step) and the maximum attenuation range of the attenuator were measured to be 0.22 dB and 28 dB, respectively. The measured RMS attenuation error and the RMS phase error for 6~18 GHz were less than 0.26 dB and $3.2^{\circ}$, respectively. The reference state insertion loss was less than 12.4 dB at 6~18 GHz. The measured input and output return losses were better than 9.4 dB over all frequencies and attenuation states. The chip size is $0.11mm^2$ excluding pads.

Design of the Voltage-Controlled Sinusoidal Oscillator Using an OTA-C Simulated Inductor

  • Park, Ji-Mann;Chung, Won-Sup;Park, Young-Soo;Jun, Sung-Ik;Chung, Kyo-Il
    • Proceedings of the IEEK Conference
    • /
    • 2002.07b
    • /
    • pp.770-773
    • /
    • 2002
  • Two sinusoidal voltage-controlled oscillators using linear operational transconductance amplifiers are presented in this paper: One is based on the positive-feedback bandpass oscillator model and the other on the negative-feedback Colpitts model. The bandpass VCO consists of a noninverting amplifier and a current-controlled LC-tuned circuit which is realized by two linear OTA's and two grounded capacitors, while the Colpitts VCO consists of an inverting amplifier and a current-controlled LC-tuned circuit realized by three linear OTA's and three grounded capacitors. Prototype circuits have been built with discrete components. The experimental results have shown that the Colpitts VCO has a linearity error of less than 5 percent, a temperature coefficient of less than rm 100 ppm/$^{circ}C$, and a $pm1.5 Hz $frequency drift over an oscillation frequency range from 712Hz to 6.3kHz. A total harmonic distortion of 0.3 percent has been measured for a 3.3kHz oscillation and the corresponding peak-to-peak amplitude was 1V. The experimental results for bandpass VCO are also presented.

  • PDF

A simple energy recovery circuit with current-fed type for plasma display panel (PDP) (간단한 전류원 형태의 구조를 갖는 새로운 PDP 에너지 회수 회로)

  • Yi, Kang-Hyun;Han, Sang-Kyoo;Choi, Seong-Wook;Kim, Chong-Eun;Moon, Gun-Woo
    • Proceedings of the KIPE Conference
    • /
    • 2005.07a
    • /
    • pp.376-379
    • /
    • 2005
  • High efficiency and low cost sustain driver for plasma display panel (PDP) with current fed is proposed. Main concept of the proposed circuit is using the current source to charge and discharge panel. As a result, all power switches can achieve the zero voltage switching (ZVS) and every auxiliary switch can also do the zero current switching (ZCS). Moreover, since the inductor current can compensate the discharge current, the current stress of all power switches can be reduced considerably. Furthermore, it has features as a simpler structure, less mass, less cost, and lower electromagnetic interference than prior circuit.

  • PDF

Implementation of High-Quality Si Integrated Passive Devices using Thick Oxidation/Cu-BCB Process and Their RF Performance (실리콘 산화후막 공정과 Cu-BCB 공정을 이용한 고성능 수동 집적회로의 구현과 성능 측정)

  • 김동욱;정인호
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.15 no.5
    • /
    • pp.509-516
    • /
    • 2004
  • High-performance Si integrated passive process was developed using thick oxidation process and Cu-BCB process. This passive process leads to low-cost and high-quality RF module with a small form factor. The fabricated spiral inductor with 225 um inner diameter and 2.5 turns showed the inductance of 2.7 nH and the quality factor more than 30 in the frequency region of 1 ㎓ and above. Also WLCSP-type integrated passive devices were fabricated using the high-performance spiral inductors. The fabricated low pass filter had a parallel-resonance circuit inside the spiral inductor to suppress 2nd harmonics and showed about 0.5 ㏈ insertion loss at 2.45 ㎓. And also the high/low-pass balun had the insertion loss less than 0.5 ㏈ and the phase difference of 182 degrees at 2.45 ㎓.

Critical Conduction Mode Bridgeless PFC Converter Based on a Digital Control (디지털 제어 기반의 경계점모드 브릿지리스 PFC 컨버터)

  • Kim, Tae-Hun;Lee, Woo-Cheol
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.65 no.12
    • /
    • pp.2000-2007
    • /
    • 2016
  • Generally, in order to implement the CRM(Critical Conduction Mode), the analog controller is used rather than a digital controller because the control is simple and uses less power. However, according to the semiconductor technology development and various user needs, digital control system based on a DSP is on the rise. Therefore, in this paper, the CRM bridgeless PFC converter based on a digital control is proposed. It is necessary to detect the inductor current when it reaches zero and peak value, for calculating the on time and off time by using the current information. However, in this paper, the on-time and off-time are calculated by using the proposed algorithm without any current information. If the switching-times are calculated through the steady-state analysis of the converter, they do not reflect transient status such as starting-up. Therefore, the calculated frequency is out of range, and the transient current is generated. In order to solve these problems, limitation method of the on-time and off-time is used, and the limitation values are varied according to the voltage reference. In addition, in steady state, depending on the switching frequency, the inductance is varied because of the resonance between the inductor and the parasitic capacitance of the switching elements. In order to solve the problem, inductance are measured depending on the switching frequency. The measured inductance are used to calculate the switching time for preventing the transient current. Simulation and experimental results are presented to verify the proposed method.

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

  • Jeong, Nam Hwi;Cho, Choon Sik;Min, Seungwook
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.14 no.1
    • /
    • pp.100-108
    • /
    • 2014
  • Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, important performance metrics such as voltage gain, return loss, noise figure and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high impedance-matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that input impedance can be described in the form of second-order frequency response, where poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor located between the gate and the drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this wideband LNA is $0.202mm^2$, including pads. Measurement results illustrate that the input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 6-8 dB over 1.5 - 13 GHz. In addition, good linearity (IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

Low-noise Design Method of Small-size Underwater Acoustic System and Module (초소형 수중 음향 시스템 모듈의 저잡음 설계 방법)

  • Lee, Dong-Ho;Shin, Young-San;Song, Jin-Ho;Wee, Jae-Kyung;Lee, Jeong-Min;Seol, Jae-Soo
    • The Journal of the Acoustical Society of Korea
    • /
    • v.31 no.5
    • /
    • pp.309-316
    • /
    • 2012
  • This paper suggest configuration method of small-size system and design method of module using multi power. In particular module designed to focus on PDN(Power Distribution Network) and filter configuration method to improve the characteristics of noise sensitive analog IC. For the prevention of high-voltage noise, manufactured module is used the ground-isolated technique and via stitching, and is connected grounds with a series of filters. In this paper, so we analyzed PDN structure through the simulation using lumped modeling and confirmed through measurement. Simulation results, when connecting 4.7uH inductor, we made certain that noise of -7dB decreases much more than when it did not. And it was confirmed 12% less than Background Noise.

Design and Fabrication of a LTCC Diplexer for GSM/CDMA Applications (GSM/CDMA 대역용 LTCC Diplexer설계 및 제작)

  • Kim, Tae-Wan;Lee, Young-Chul
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.13 no.7
    • /
    • pp.1267-1271
    • /
    • 2009
  • In this paper, a diplexer circuit to separate GSM from CDMA band is designed using a LTCC (Low Temperature Cofired Ceramic) multi-layer technology. In order to increase a integration capability of the diplexer, it is designed using 3-dimensional (3-D) multi-layer compact inductor and capacitors in e-layer LTCC substrate with a relative dielectric constant of 7. In order to achieve high selectivity of the bands, a shunt capacitor and inductor are designed in the high-pass filter (HPF) and low-pass filter (LPF), respectively. The size of the fabricated diplexer including CPW pads is 3,450 ${\times}$4,000 ${\times}$694 ${\mu}m^3$An insertion loss (IL) and return loss in GSM band are less than -1.35dB and more than -5.66dB,respectively. In the case of CDMA band, the IL of -1.54dBandRLof above -9.30dBare archived.

A Simple ZVZCS Sustain Driver for a Plasma Display Panel

  • Yi Kang-Hyun;Han Sang-Kyoo;Choi Seong-Wook;Kim Chong-Eun;Moon Gun-Woo
    • Journal of Power Electronics
    • /
    • v.6 no.4
    • /
    • pp.298-306
    • /
    • 2006
  • A high efficiency and low cost sustain driver for a plasma display panel (PDP) utilizing a current pumping method is proposed. The main concept of the proposed circuit is using the current source to charge and discharge the panel. As a result, all power switches can achieve zero voltage switching (ZVS) and every auxiliary switch can also achieve zero current switching (ZCS). Since the inductor current can compensate for the discharge current, the current stress of all the power switches can be reduced considerably. Furthermore, it has features such as a simpler structure, less mass, lower cost, and lower electromagnetic interference than in previous circuits.

Tapped Inductor Boost Converter with Losses-less Passive Snubber (무손실 수동 스너버를 갖는 탭인덕터 부스트 컨버터)

  • Song, Joon-Keun;Kim, Tae-Woo;Park, Sin-Kyun
    • Proceedings of the KIPE Conference
    • /
    • 2013.11a
    • /
    • pp.9-10
    • /
    • 2013
  • 본 논문에서는 무손실 수동 스너버를 갖는 탭인덕터 부스트 컨버터를 제안한다. 기존의 탭인덕터 부스트 컨버터는 누설 인덕턴스와 기생 커패시턴스의 공진에 의한 전압 스트레스의 증가와 그것을 저감시키기 위한 손실 스너버가 사용되어야 한다. 그리고 MOSFET가 하드 스위칭하므로 방열을 위한 추가 PCB 공간확보가 필요하다. 이런 문제점을 무손실 스너버 회로를 추가하여 부품의 스트레스와 스위칭 손실을 최소화하고 PCB 면적을 최적화할 수 있다. 본 논문에서는 제안된 부스트 컨버터의 동작원리를 이론적으로 해석하고, 모의실험 및 시제품 제작하여 검증한다.

  • PDF