• Title/Summary/Keyword: Inductive chopper circuit

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Characteristics of Two Phase Chopper with Two Separate Groups of DC Motors in Regenerative Braking (회생용 2분할 2상쵸퍼의 특성)

  • Han, Kyung-Hue
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.34 no.3
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    • pp.115-123
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    • 1985
  • A two phase chopper system with two separate groups of DC motors for regenerative braking is dealt with in this article. The main circuit consists of two sets of chopping parts, four diodes and two separate groups of DC motors. Although the proposed chopper circuit requires more circuit elements than the conventional two phase chopper system with combined output, it has the following advantages`(1). Ripple frequency of smoothing reactor current becomes twice as high as that of the conventional system, so the continuous current range and the ripple ratio are improved greatly. Therefore, the efficiency becomes even higher, the capacity of commutation equipment is reduced and the inductive interference become less.(2). Load current division becomes equalized. Therefore it is possible to drive not only series motors but also shunt, separately excited and compound motors.

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A Study on Chopper Circuit for Variation of Inductance and Threshold Voltage based on IGBT (IGBT 기반 인덕턴스 및 문턱전압 변화에 따른 초퍼 회로의 연구)

  • Lho, Young-Hwan
    • Journal of the Korean Society for Railway
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    • v.13 no.5
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    • pp.504-508
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    • 2010
  • The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.