• 한국항공우주학회지
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• 제36권11호
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• pp.1126-1131
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• 2008

본 논문은 궤도 기하학 기반 바이어스 추정기법을 다목적실용위성 1호 및 2호의 자기센서 측정데이터에 적용하여 위성체 태양전지판과 전장박스에서 발생하는 유도자기장 바이어스를 추정한다. 유도자기장 바이어스의 추정과 적절한 보정은 자기센서의 노후화를 대처하고 수명을 최대한 연장하여 정상적으로 위성 임무를 수행을 가능하게 한다.

• Journal of Magnetics
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• 제16권4호
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• pp.453-456
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• 2011

Demagnetization for a tube sample which was made of a galvanized steel sheet was performed by applying a magnetic field with a decrement to remove the remanent magnetization of the material. An orthogonal fluxgate magnetic field sensor was used to measure a magnetic field created from a ferromagnetic material. To evaluate the remanent magnetization, the measured magnetic fields were separated into two magnetic field components by the remnant magnetization and the induced one. The horizontal and the vertical bias fields should be controlled separately during demagnetization to remove the horizontal and the vertical components of the remanent magnetization of the tube sample.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.1109-1112
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• 2015

소자장치가 없는 함정의 경우 탈자 시에 지구자계와 반대방향으로 수직자화를 부여하여 수중에서 수직방향의 자계가 발생하지 않도록 한다. 탈자 시에 수직자화를 부여하는 탈자방법으로는 Flash D가 있어나 수직자화의 예측이 어렵다. 본 논문에서는 Flash D와는 달리 바이어스 자계를 인가하여 수직방향으로 자화를 형성하는 것에 대해 검토하였다. 이용된 시편은 두께 0.15mm의 아연도금 강판을 이용하여 함정의 선수에서 선미까지의 형상을 고려하여 원형, 삼각, 사각형의 형태를 가진다. FEM해석을 통해 시편형상에 따른 자계신호의 차이를 구하였고 인가자계에 의한 잔류자화특성곡선을 실험을 통해 구하였다. 바이어스자계를 수평 및 수직으로 각각 인가하여 잔류자화에 의한 자계신호를 측정하였다. 시편에 인가하는 자계는 파형발생기를 이용하여 솔레노이드 코일에 전류를 흘려 발생시켰으며 수직바이어스자계는 솔레노이드 코일 아래에 사각 코일을 설치하여 발생시켰다. 신호측정은 자계센서를 이용하였다. 이 실험을 통해 수직 및 수평 바이어스 자계는 시편에 수직 및 수평자화를 각각 형성시켰으며 수직자화는 수직바이어스 자계와 선형적인 관계를 가져 함정에 형성되는 수직자화를 예측할 수 있음을 알았다.

• 한국군사과학기술학회지
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• 제14권3호
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• pp.359-363
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• 2011

An orthogonal magnetic field is often used for a military vessel in the deperm process such as Flash D deperm protocol and Anhysteretic deperm protocol. The effect of the orthogonal magnetic field on a deperm performance was investigated for a sample with strain-induced magnetization and field-induced magnetization given to different direction. A 70mm wide, 110mm long and 0.25mm thick rectangular steel plate was bent to have U-shape and to generate a strong strain on the bottom region of U-shaped steel plate. Field-induced magnetization was attached by NdFeB permanent magnet. Demagnetization was performed by applying magnetic field with a step decrement from the first field(the first shot) under the action of DC bias field.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.931-937
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.

• 한국세라믹학회지
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• 제44권6호
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• pp.308-312
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• 2007

Ferroelectric, magnetic, and magnetoelectric effects for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics have been investigated. The data show that magnetoelectric polarization coefficient, ${\alpha}_p$ is due to a linear coupling between polarization and magnetization, and that ${\alpha}_p$ is independent of dc magnetic bias and ac magnetic field. The values of ${\alpha}_p$ and magnetic induced susceptibility for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics are much larger than those of single $BiFeO_3$ crystal. We believe that the magnetoelectric effect is significantly enhanced by breaking of the cycloidal spin state of a long-period spiral spin structure due to randomly distributed charged imperfections.

• Investigative Magnetic Resonance Imaging
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• 제22권4호
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• pp.218-228
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• 2018

Purpose: The objective of this study is to determine the effect of physical changes on MR temperature imaging at 7.0T and to examine proton-resonance-frequency related changes of MR phase images and T1 related changes of MR magnitude images, which are obtained for MR thermometry at various magnetic field strengths. Materials and Methods: An MR-compatible capacitive-coupled radio-frequency hyperthermia system was implemented for heating a phantom and swine muscle tissue, which can be used for both 7.0T and 3.0T MRI. To determine the effect of flip angle correction on T1-based MR thermometry, proton resonance frequency, apparent T1, actual flip angle, and T1 images were obtained. For this purpose, three types of imaging sequences are used, namely, T1-weighted fast field echo with variable flip angle method, dual repetition time method, and variable flip angle method with radio-frequency field nonuniformity correction. Results: Signal-to-noise ratio of the proton resonance frequency shift-based temperature images obtained at 7.0T was five-fold higher than that at 3.0T. The T1 value increases with increasing temperature at both 3.0T and 7.0T. However, temperature measurement using apparent T1-based MR thermometry results in bias and error because B1 varies with temperature. After correcting for the effect of B1 changes, our experimental results confirmed that the calculated T1 increases with increasing temperature both at 3.0T and 7.0T. Conclusion: This study suggests that the temperature-induced flip angle variations need to be considered for accurate temperature measurements in T1-based MR thermometry.

• 한국재료학회지
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• 제3권4호
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• pp.327-335
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• 1993

Helmholz구성을 가진 두개의 전자석에 의해 작동되는 RF cylindrical magnetron을 사용하여 이의 플리즈마 성질을 가한 자장의 함수로 조사하고, 또한 $CHF_3$와 $CF_4/H_2$를 3mTorr의 낮은 압력하에서 사용하여 실리콘의 반응성 이온 건식식각 특성을 조사하였다. 또한 여러 자장의 크기 및 개스 분위기하에서 식각한 실리콘으로 제조한 Schottky다이오드의 전류-전압 특성으로 식각으로 인한 실리콘의 손상정도를 측정하였다. Cylindrical magnetron에 가한 자장을 증가시킴에 따라 플라즈마내이온밀도 및 분해될 개스밀도(radical density)가 직선적으로 증가하였으며 시편이 위치한 전극에 유도되는 직류 자기 바이아스 전압(dc self-bais voltage)은, 반면, 지수적인 감소를 하였다. 100Gauss부근의 자장을 가한 경우에 최대의 식각속도를 갖고 이때의 실리콘의 식각속도가 자장을 가하지 않은 경우에 비해서 5배정도로 증가하였으며, 전지적인 특성 역시 습식방법을 사용하여 식각한 실리콘에 가까운 정도의 이온 손상이 없느 식각상태를 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.546-549
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a Matlab program.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.