• Title/Summary/Keyword: Indium-Tin Oxide

Search Result 972, Processing Time 0.028 seconds

Fabrication and Characterization of Blue OLED using TMP-BiP Host and DJNBD-1 Dopant (TMP-BiP 호스트와 DJNBD-1 도펀트를 이용한 청색 OLED의 제작과 특성평가)

  • Chang, Ji-Geun;Ahn, Jong-Myoung;Shin, Sang-Baie;Chang, Ho-Jung;Gong, Su-Choel;Shin, Hyun-Kwan;Gong, Myung-Sun;Lee, Chil-Won
    • Journal of the Semiconductor & Display Technology
    • /
    • v.6 no.2 s.19
    • /
    • pp.19-23
    • /
    • 2007
  • The blue emitting OLEDs using TMP-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl) phosphonate] host and DJNBD-1 dopant have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum thermal evaporation method. Followed by the deposition, blue color emission layer was deposited using TMP-BiP as a host material and DJNBD-1 as a dopant. Finally, small molecule OLEDs with structure of $ITO/2-TNATA/NPB/TMP-BiP:DJNBD-l/Alq_3/LiF/Al$ were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. The effect of dopant into host material of the blue OLEDs was studied. The blue OLEDs with DJNBD-1 dopant showed that the maximum current and luminance were found to be about 34 mA and $8110\;cd/m^2$ at 11 V, respectively. In addition, the color coordinate was x=0.17, y=0.17 in CIE color chart, and the peak emission wavelength was 440 nm. The maximum current efficiency of 2.15 cd/A at 7 V was obtained in this experiment.

  • PDF

Electrical and Structural characteristics of ITO thin films deposited under different ambient gases (분위기 가스에 따른 ITO 박막의 전기적 및 구조적 특성)

  • Heo, Ju-Hee;Han, Dae-Sub;Lee, Yu-Lim;Lee, Kyu-Mann;Kim, In-Woo
    • Journal of the Semiconductor & Display Technology
    • /
    • v.7 no.4
    • /
    • pp.7-11
    • /
    • 2008
  • ITO (Indium Tin Oxide) thin films have been extensively studied for OLED devices because they have high transparent properties in the visible wavelength and a low electrical resistivity. These ITO films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$ and Ar+$H_2$) at $300^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon has been changed from 0.5sccm to 5sccm and from 0.01sccm to 0.25sccm respectively. The resistivity of ITO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while it is nearly constant under Ar+$H_2$. And the peak of ITO films obtained (222) and (400) orientations and the average transmittance was over 80% in the visible range. The OLED device fabricated with different ITO substrates made by configuration of ITO/$\alpha$-NPD/Alq3/LiF/Al to elucidate the performance of ITO substrate for OLED device.

  • PDF

Improved On-off Property of SiO2 Embedded Polyfluorene Polymer-OLED (SiO2의 첨가를 통한 Polyfluorene계 Polymer-OLED의 발광 동작 개선 가능성)

  • Jeon, Byung Joo;Kim, Hyo Jun;Kim, Jong Su;Jeong, Yong Seok
    • Journal of the Semiconductor & Display Technology
    • /
    • v.16 no.1
    • /
    • pp.40-44
    • /
    • 2017
  • The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

  • PDF

Development of Online Speller using Non-contact Blink Detection Glasses (비접촉 눈 깜박임 측정 안경형 디바이스를 이용한 실시간 스펠러의 구현)

  • Lee, Jeong Su;Lee, Hong Ji;Lee, Won Kyu;Lim, Yong Gyu;Park, Kwang Suk
    • Journal of Biomedical Engineering Research
    • /
    • v.36 no.6
    • /
    • pp.283-290
    • /
    • 2015
  • We proposed blink based online speller for the locked-in syndrome (LIS) patients, paralyzed in nearly all voluntary muscles expect for the eyes, with a simple and easy-to-use eye blink detection glasses. Electrooculogram (EOG) is the golden standard method of eye movement or blink measurement with Ag/AgCl electrodes. However, this method has several drawbacks such as skin irritation and dehydration of conductive gel. To resolve the shortcomings, we used a blink detection system based on a transparent capacitively coupled electrode, which is conductive indium tin oxide (ITO) films. The films make it possible to measure eye blink without direct skin contact and obstruction of field of view. We finally developed user-friendly blink based online speller with the blink detection system. To classify voluntary and non-voluntary blink, we used the double blink for command of the speller. The online speller experiment result with six healthy subjects shows that mean accuracy is 98.96% and letter per minute (LPM) is 4.73, which are better result by comparison with conventional P300 or auditory brain-computer interface (BCI) paradigm. The result of the experiment demonstrates the possibility of applying the proposed system as a communication method for the LIS patients.

The Electrochemical Characterization of Mixture LB Films of Fatty Acid and Phospholipids (지방산과 인지질 혼합 LB막의 전기화학적 특성)

  • Son, Tae-Chul;Kim, Nam-Seok;Park, Keun-Ho
    • Journal of the Korean Applied Science and Technology
    • /
    • v.20 no.2
    • /
    • pp.94-100
    • /
    • 2003
  • We studied electrochemical characteristics of Langmuir-Blodgett(LB) films by using cyclic voltammetry with a three-electrode system. An Ag/AgCl as a reference electrode, a platinum wire as a counter electrode and LB film-coated indium tin oxide(ITO) as a working electrode were used to study electrochemical characteristics at a various concentration of $NaClO_4$ solution. LB films were reduced from initial potential to -1350 mV, continuously oxidized to l650mV and returned to the initial point. The scan rate was l00mV/s. The monolayer surface morphology of the LB film have been measured by Atomic Force Microscope(AFM). As a result, We comfirmed that the microscopic properties of LB film by AFM showed the good orientation of momolayer molecules and the thickness of monolayer was 3.5-4.lnm. The cyclic voltammograms(CV) of the ITO-coated glass showed the peak potentials for the reduction-oxidation reation. LB films of 4-octyl-4'-(5-carboxypentamethyleneoxy) azobenzene(8A5H) / L-${\alpha}$-phosphayidyl choline, dilauroyl(DLPC) seemed to be irreversible process caused by only the oxidation current from the cyclic voltammogram. The current of oxidatation increased at cyclic voltammogram by increasing 8A5H density in LB films. The diffusivity(D) of LB films increased with increasing of a 8A5H amount and was inversely proportional to the concentration of $NaClO_4$ solution.

Preparation and characterization of silver nanowire transparent electrodes using shear-coating (Shear-coating을 사용한 은 나노와이어 투명 전극 제조 및 특성 분석)

  • Cho, Kyung Soo;Hong, Ki-Ha;Park, Joon Sik;Chung, Choong-Heui
    • Journal of the Korean institute of surface engineering
    • /
    • v.53 no.4
    • /
    • pp.182-189
    • /
    • 2020
  • Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

The effect of $Ar\;+\;H_2$ Plasma on the Low Temperature ITO Film Synthesized on Polymer (폴리머 기판상에 합성된 저온 ITO 박막에 미치는 $Ar\;+\;H_2$ 플라즈마의 영향)

  • Moon, Chang-S.;Chung, Yun-M.;Lee, Ho-Y.;Kim, Yong-M.;Kim, Kab-S.;Gaillard, M.;Han, Jeon-G.
    • Journal of the Korean institute of surface engineering
    • /
    • v.39 no.5
    • /
    • pp.206-209
    • /
    • 2006
  • Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at $5.27\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ without substrate heating in comparison with $2.65\;{\times}\;10{-3}\;{\Omega}{\cdot}cm$ under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in $Ar\;+\;H_2$ plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In II and O II and neutral Sn I was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.

The Preparation of Phosphor Screen for Video Phone Tube by Screen Printing Method (Screen Printing법에 의한 Video Phone Tube용 형광막 제조)

  • Lee Mi-Young;Lee Jong-Wook;Kim Young-Bae;Nam Su-Yong;Lee Sang-Nam;Moon Myung-Jun
    • Journal of Environmental Science International
    • /
    • v.14 no.8
    • /
    • pp.801-810
    • /
    • 2005
  • The phosphor and ITO(Indium Tin Oxide) films for video phone tube (VPT) were simply prepared by the screen printing and thermal transfer methods. The increasing order of thermal firing of acrylic binder for phosphor and ITO was M6003 < M6664 < A/A 1919 < M500l < M670 1 and all mass of binders were perfectly decomposed at lower temperature than $400^{\circ}C.$ After thermal firing of phosphor paste, the residual of binder on the surface of phosphor could not be found by SEM. Aerosil as thickner provides the thixotropy property for phosphor paste but decrease the brightness of phosphor screen as residual after thermal firing. Since the thixotropy of M5001 binder without aerosil was shown and the storage modulus of phosphor paste by increasing the angular frequency was not nearly changed and the decrease of the storage modulus of phosphor paste by increasing the strain was remarkably shown. It was possible to prepare the phosphor paste which was predominant in the plate separation and the reproduction of pattern after the screen printing. Since the addition of dispersing agent to improve the printing process decreases the electrical conductivity and light transmission of ITa film, it could be found to be necessary the development of binder for phosphor paste that decreases the amount of dispersing agent possibly and does not use the aerosil as additive.

he deposition and analysis of ITO thin film by DC magnetron sputter at room temperature (DC 마그네트론 스펏터를 이용한 ITO 박막의 실온 증착 및 특성 분석)

  • Kim, Howoon;Yun, Jung-Oh
    • Journal of IKEEE
    • /
    • v.24 no.1
    • /
    • pp.59-66
    • /
    • 2020
  • In this study, the characteristics of ITO thin film was investigated to finding a low cost and highly transparent electrodes for display of mobile communication devices. The ITO film was deposited by DC magnetron sputter. The experimental conditions were changed as follows: 1. ambient pressure changed 1 to 3 mTorr with 1mTorr step, 2. bias electric voltage changed with 10V step. The chamber was pumped out by rotary pump until 10-3Torr then the diffusion pump was used to lower the pressure of 10-6Torr. The results shows us the film growth was obvious when the bias voltage was larger than 300V, but the overall thickness tendency was existed: the more voltage is the thicker thickness. At 330V bias voltage condition, the deposition rate was the largest and apparent grain was showed.

Property change of organic light-emitting diodes due to an ITO surface reformation (ITO 표면 개질에 의한 유기 발광 소자의 특성 변화)

  • Na, Su-Hwan;Joo, Hyun-Woo;An, Hui-Chul;Lee, Suk-Jae;Oh, Hyun-Suk;Min, Hang-Gi;Kim, Tae-Wan;Lee, Ho-Sik;Lee, Won-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.411-412
    • /
    • 2008
  • We have studied a property change of organic light-emitting diodes (OLED) due to an indium tin oxide (ITO) surface reformation. The characteristics of OLED were improved by oxygen plasma processing of an ITO in this work. ITO is widely used as a transparent electrode in light-emitting devices, and the OLED device performance is sensitive to the surface properties of the ITO. The OLED devices with the structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using various characterization techniques. The oxygen plasma process of an ITO was processed by using RF power of 125W and oxygen partial pressure of $2\times10^{-2}$ Torr. The oxygen plasma processing of an ITO processed for 0/1/2/3/4min. Current-voltage-luminance characteristics of the devices show that turn-on voltage is 4V for 2min device and the luminance reaches about 27,000cd/$m^2$ for 4min device. The current efficiency shows that 3min device becomes saturated to be about 8cd/ A. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

  • PDF