• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.284-284
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• 2009

We have fabricated semiconductor nanocrystals using phase separation on flexible substrates for future application in QD-LEDs. The phase separation between the CdSe semiconductor nanocrystals and TPD organic underlayer can occur during the solvent drying, and the CdSe may rise towards the surface of the coated films, which is arranged into close packed array called self-assembly process. In this work, the polyethylene naphthalate (PEN) films of $200{\mu}m$ thickness was used as a flexible substrate, which was coated with indium tin oxide(ITO) as a transparent electrode of <$15{\Omega}/cm^2$. A number of solvents such as chloroform, toluene, and hexane was used and their coating properties were investigated using the spin coating process. The dispersion of both QD and TPD was rather poor in toluene and hexane and resulted in rougher surface and some aggregates. Meanwhile, the surface roughness of templates can be a very critical issue in the fabrication of QD-LED devices. Some experiments was performed to reduce the ~4nm surface roughness of the PEN films and It can be decreased to the minimum of ~0.7nm. Also discussed are the optical properties of semiconductor nanocrystals used in this phase separation and possible large area and continuous coating process for future application.

• Solar Energy
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• v.17 no.2
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• pp.55-66
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• 1997

The structural and optoelectronic properties of polycrystalline CdS films up to several microns in thickness, fabricated by three different methods, are compared to one another for the purpose of preparing CdTe/CdS solar cells. All films were deposited on an indium tin oxide on glass substrate. The three methods are: 1) alternated spraying of cation and anion solution at room temperature; 2) spray pyrolysis with substrate temperature up to $500^{\circ}C$; 3) chemical bath deposition (CBD). Deposited films were thermally treated in various ways. All films showed a well-developed wurtzite structure. Films grown by the alternated-spray method and the chemical bath method consist of randomly-oriented crystallites with dimensions <0.5 microns. Annealing at $400^{\circ}C$ increases the crystallite size slightly. Films which were grown by pyrolysis at substrate temperatures from $400^{\circ}C\;to\;500^{\cir\c}C$ were oriented in the <002> direction. For growth by pyrolysis at $500^{\circ}C$, the surface is rough on a lateral scale of 0.1 to 0.3 microns. The optical band gap and defect states are investigated by optical absorption, photoluminescene, Raman, and photothermal deflection spectroscopies.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.65-65
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• 2011

Single-well carbon nanotubes (SWNT) have been proposed as a promising candidate for various applications owing to their excellent properties. In particular, their fascinating electrical and mechanical properties could provide a new area for the development of advanced engineering materials. A transparent conductive thin film (TCF) has increased for applications such as liquid crystal displays, touch panels, and flexible displays. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. But, a bundle of CNTs has different electrical properties than their individual counterparts. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. Results, we show that 97 ${\Omega}$/> sheet resistance can be achieved with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after ionic doping treatments were discussed.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.212-215
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• 2011

New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20${\AA}$ and 40${\AA}$ in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20${\AA}$-thick doped emitter is referred to as "D-1" and the device with a 4${\AA}$-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 $cd/m^2$ and 6620 $cd/m^2$, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.181-187
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• 1997

The layered BaTiO3 thin films with a high dielectric constant of polycrystalline BaTiO3 and a good in-sulating property of amorphous BaTiO3 were prepared. And their electrical properties were characterized with stacking methods. The BaTiO3 thin films were prepared by rf-magnetron sputtering technique using a ceramic target on Indium-doped Tin oxide coated glasses. A new stacking method resulted in higher dielec-tric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decrease the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a mul-tilayered amorphous/microcrystalline/polycrystalline structure, which was confirmed indirectly by AES depth profile.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.433.1-433.1
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• 2014

The research of graphene, a monolayer of carbon atoms with honeycomb lattice structure, has explosively increased after appeared in 2004. As a result, its high transmittance, mobility, thermal conductivity, and outstanding mechanical and chemical stability have been proved. Especially, many researches were executed about the field of transparent electrode highlighting material of substituting the indium tin oxide (ITO). In addition, qualitative and quantitative improvements have been achieved due to many synthesis methods were discovered. Among them, mostly used method is chemical vapour deposition of graphene grown on copper or nickel. The transmittance, mobility, sheet resistance, and other many properties are completely changed according to these two types of synthesis method of graphene. In this research, considering the difference of characteristics as the synthesis method of graphene, what types of graphene should be used and how to use it were studied. The stacked graphene harvested on copper and multi-layer graphene harvested on nickel were compared and analyzed, as a result, the transmittance of 90% and the sheet resistance of $70{\Omega}{\square}$ was showed even though stacked graphene layers were 4 layers. The reason that could bring these results is lowered sheet resistance due to stacked monolayer graphenes. Moreover, light output power of the three stacked graphene spreading layer shows the highest value, but light-emitting diode with multi-layer graphene died out from 12mA due to also its high sheet resistance. Therefore, we need to clarify about what types of graphene and how to use the graphene in use.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.380-380
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• 2012

유기물 나노 복합체는 고집적/저전력/플렉서블 특성을 가지는 초고효율 비휘발성 메모리 소자를 제작하는데 많은 이점을 가지고 있어, 차세대 비휘발성 메모리 소자에 사용되는 소재로 매우 각광받고 있다. 그 중, WORM 특성을 가지는 메모리 소자는 1회 쓰기 후 수많은 읽기가 가능하기 때문에, 그 효율성이 매우 뛰어나 이목을 끌고 있다. 유기물 나노 복합체 중에서, poly(3-hexylthiophene) (P3HT)는 화학적/전기적 안정성과 전하의 이동도 특성이 뛰어나기 때문에 전자 소자에 응용하려는 연구가 활발히 진행되고 있다. 본 연구에서는 $P_3HT$ 고분자를 polymethylmethacrylate(PMMA) 고분자에 분산시킴으로써, 상태를 기억하는 저장 매체로 사용하였다. 본 연구의 소자를 제작하기 위하여 약 9 : 1 비율을 가지는 PMMA 와 $P_3HT$를 용매인 클로로벤젠에 녹여 용액을 준비하였다. Indium Tin Oxide (ITO)가 코팅된 glass를 화학적 처리를 통해 청결하게 만든 후, PMMA와 $P_3HT$가 용해되어 있는 용액을 스핀 코팅 방법으로 박막을 형성하였다. PMMA 속에 $P_3HT$가 분산되어 있는 활성층 위에 상부 전극으로 Al을 열 증착 방식을 통하여 형성하였다. 제작된 WORM 특성을 갖는 유기물 나노 복합체 플렉서블 소자의 메모리 효과에 대한 분석을 위하여, -5V에서 5V까지 전압을 인가하여 전류-전압 특성을 측정하였다. 초기 낮은 전도도 (OFF 상태, 10-10A에서 10-4A)를 유지하다가, 쓰기 전압을 1회 가해준 후부터는 높은 전도도 (ON 상태, 10-5A 에서 10-2A)를 유지하는 특성을 관측하였다. 또한 WORM 특성을 갖는 메모리 소자로써의 능력을 보여주기 위하여, 1회 쓰기 전압 후 읽기 전압인 1V를 인가하여 높은 전도도 상태에 대한 상태 유지 능력을 측정하였고, 전하 수송 메커니즘을 규명하기 위하여 피팅 모델을 통해 설명하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.368-368
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• 2012

무기물 나노입자를 포함하는 유기물/무기물 나노복합체는 플렉시블 전자 소자에 적용이 가능하기 때문에 차세대 비휘발성 메모리 소자에 대한 응용연구가 활발히 진행되고 있다. 본 논문에서는 $CuInS_2$ (CIS)/ZnS 코어-쉘 나노 입자를 포함한 poly(N-vinylcarbazole) (PVK) 고분자 박막을 기억 매체로 사용하는 유기 쌍안정성 소자(organic bistable devices, OBD) 메모리 소자를 제작하고 전기적 성질에 대하여 관찰하고 전하 수송 메카니즘에 대하여 규명하였다. 화학적 방법으로 형성한 CIS/ZnS 코어-쉘 나노 입자와 PVK를 toluene 용매에 녹인 후 초음파 교반기를 사용하여 나노 복합 소재를 형성하였다. 하부 전극으로 indium-tin-oxide (ITO)가 증착되어 있는 유리 기판 위에 나노 복합 소재를 스핀코팅 방법으로 도포한 후 열을 가해 잔류 용매를 제거하였다. CIS/ZnS 코어-쉘 나노 입자가 분산되어 있는 PVK 나노 복합 소재로 구성된 박막위에 상부 전극으로 Al을 열증착하여 메모리 소자를 제작하였다. 전류-전압 (I-V) 측정 결과에서 저전압에서는 전도도가 낮은 OFF 상태를 유지하다 어느 특정 양의 전압에서 전도도가 갑자기 증가하여 높은 전도도의 ON 상태로 전이되는 쌍안정성이 관찰되었다. 전류의 ON/OFF 비율은 약 $10^3$이며 역방향 바이어스를 가해주었을 때 특정 음의 전압에서 전도도가 ON 상태에서 OFF 상태로 전환되는 전형적인 OBD 메모리 소자의 I-V 특성을 나타났다. 메모리 전하 수송 메커니즘 분석 결과 쓰기 과정은 thermionic emission (TE), space-charge-limited-current (SCLS) 모델과 지우기 과정은 Fowler-Nordheim (FN) 터널링 모델로 설명이 되었다. 제작된 소자에 대해 기억 시간 측정 결과는 ON과 OFF 상태의 전류가 장시간에도 변화가 거의 없는 소자의 안정성을 보여주었다. 이 실험 결과는 CIS/ZnS 코어-쉘 나노 입자가 분산되어 있는 PVK 나노 복합 소재를 사용하여 안정성을 가진 OBD 메모리 소자를 제작할 수 있음을 보여주고 있다.