• 한국재료학회지
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• 제18권10호
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• pp.521-528
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• 2008

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-$SiO_x$) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-$SiO_x$ decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between $150^{\circ}\;and\;200^{\circ}$. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-$SiO_x$ thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-$SiO_x$ showed homogeneous alignment; however, in the lower case (x < 1.6), liquid crystals showed homeotropic alignment.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.33-36
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• 2016

In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.

• 신재생에너지
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• 제17권1호
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• pp.1-6
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• 2021

Transparent conducting oxide (TCO) films have been widely used in optoelectronic devices, such as OLEDs, TFTs, and solar cells. However, thin films of indium tin oxide (ITO) have few disadvantages pertaining to process parameters such as substrate temperature and sputtering power. In this study, we investigated the requirements for using TCO films in silicon-based solar cells and the best alternative TCO materials to improve their efficiency. Moreover, we discussed the current status of high-efficiency solar cells using low-temperature TCO films such as indium zinc oxide and Zr-doped indium oxide.

• 청정기술
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• 제21권4호
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• pp.209-216
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• 2015

인듐주석산화물(ITO)은 TFT-LCD, OLED 등의 투명전극에 널리 사용되는 소재이다. ITO의 주요 원소인 인듐(In)은 높은 비용과 제한된 매장량 등으로 인해 머지 않아 고갈될 것으로 예측되고 있다. 이에 대처하는 방법은 공정 후 잔류 ITO 타겟을 재활용하여 ITO 소재의 원료를 확보하는 것이다. 본 원고에서는 공정 후 잔류 ITO 타겟의 재자원화 기술 및 시장 동향 고찰 및 효율적인 재활용을 위한 방향을 제시하였다. 그 결과, 현재 국내 및 일본에서 대부분 잔류 ITO 타겟에서 In만을 재자원화하고 있는 것으로 파악되었다. 이외에도 ITO 나노분말 입자를 제조 및 분산한 용액을 이용하여 투명전극을 제작하는 연구개발이 진행되고 있다. 그러나, ITO 타겟을 이용한 투명전극이 다른 대체 기술을 적용한 것보다 우수하기 때문에, 보다 효율적인 ITO 재자원화 및 타겟 제작을 위해 ITO를 동시에 재생하는 기술 확립이 필요한 것으로 보인다.

• 한국응용과학기술학회지
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• 제34권4호
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• pp.705-716
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• 2017

본 연구에서는 0.5, 1.0, 1.5 wt%의 $TiO_2$를 함유하는 인듐-티타늄 수산화물을 졸 및 염기 첨가에 의해 얻었고, $200^{\circ}C$와 $500^{\circ}C$에서 겔화 과정을 통해 ITiO(Indium Titanate Oxide)를 얻었다. $200^{\circ}C$에서 겔화 과정 후 얻어지는 ITiO 입자가 작아서 조밀성이 있는 ITiO 타겟을 제조하였다. 0.5, 1.0, 1.5 wt%의 $TiO_2$를 함유하는 ITiO 타겟을 스퍼터링하여 ITiO 박막을 유리판위에 제작하여 비저항, 전하 이동도, 캐리어 농도를 조사하였다. 이들 박막 중에서 산소 조성이 0.4 %인 조건에서 0.5 wt% 중량% $TiO_2$를 함유하는 ITiO 타겟으로부터 제작된 ITiO 박막이 가장 낮은 비저항, 가장 큰 전하이동도 및 가장 낮은 캐리어 농도를 보임을 알 수 있었고, 얻어진 ITiO 박막의 광투과율을 측정하여 적외선 영역에서 광투과율이 ITO(Indium Tin Oxide) 박막에 비해 현저히 증가함을 발견하였다.

• 공업화학
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• 제25권3호
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• pp.242-248
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• 2014

정보 통신 분야의 발전에 따라 기존의 전자 기기들은 평면성을 벗어나 투명 유연하고 깨지지 않는 특성이 요구되고 있다. 이러한 부가적인 특성을 갖춘 기기들의 제조를 위해서는 전극의 투명성과 유연성을 동시에 갖고 있어야 하지만, 현재 가장 대표적으로 이용되는 투명전극인 ITO (Indium Tin Oxide)는 유연하지 못하다는 단점과 자원적인 한계를 갖고 있다. 이에 따라 ITO의 한계를 극복하기 위해 다양한 물질들을 이용한 대체 재료 개발이 활발히 연구되고 있으며 대체 물질들의 복합화를 통해 더 향상된 물성을 발현시키기 위한 연구가 진행되고 있다. 본 총설에서는 ITO의 한계를 극복하고 투명전극으로서의 응용 가능한 대체 물질들에 대한 연구 현황을 정리하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.208-208
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• 2010

Indium zinc tin oxide (IZTO) thin films were studied as a possible alternative to indium tin oxide (ITO) films for providing low-cost transparent conducting oxide (TCO) for thin film photovoltaic devices. IZTO films were deposited onto glass substrates at room temperature. A dc/rf magnetron co-sputtering system equipped with a ceramic target of the same composition was used to deposit TCO films. Earlier studies showed that the resistivity value of $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20) films could be lowered to approximately $6{\times}10^{-4}ohm{\cdot}cm$ without sacrificing optical transparency and still maintaining amorphous structure through the optimization of process variables. The growth rate was kept at about 8 nm/min while the oxygen-to-argon pressure ratio varied from 0% to 7.5%. As-deposited films were always amorphous and showed strong oxygen pressure dependence of electrical resistivity and electron concentration values. Influence of forming gas anneal (FGA) at medium temperatures was also studied and proven effective in improving electrical properties. In this study, the chemical composition of the targets and the films varied around the $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20). It was the main objective of this paper to investigate how off-stoichiometry affected TCO characteristics including electrical resistivity and optical transmission. In addition to the composition effect, we have also studied how film properties changed with processing variables. IZTO thin films have shown their potential as a possible alternative to ITO thin films, in such way that they could be adopted in some applications where currently ITO and IZO thin films are being used. Our experimental results are compared to those obtained for commercial ITO thin films from solar cell application view point.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.798-801
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided (ITO)/zinc oxide (ZnO)/Ag/zinc oxide (ZnO)/ITO. With about 50 nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550 nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.