• 복식문화연구
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• 제28권1호
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• pp.96-113
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• 2020

A new form of media is changing the expression and content of fashion. In this paper, fashion films that have appeared since 2010 - when digital fashion communication was increasing - will be discussed and explored to consider how technological transitions in fashion media are changing the appearance and role of fashion. A literature review was conducted to derive characteristics, types, and expressive elements of new media fashion films, which were defined for this study as fashion films produced and distributed since 2010 using digital media. Films were categorized into three types: promotional, editorial, and independent fashion films. Furthermore, elements of the films were identified as fashion mise-en-scene, auditory structure, and content structure. Types and expressions of digital fashion images in 40 fashion films were analyzed according to these elements. The results showed that promotional fashion films maximize various narrative and sensory effects on fashion products, whilst editorial fashion films strengthen the role of entertainment. Independent fashion films expand the area of fashion and promote the diversification of fashion systems. Moreover, the results show that fashion films are not a secondary form of media that just expresses fashion; they provide a tool for the creation of new fashion content. New media fashion films promote the expansion of expressive spectra and boundaries, offering various multisensory experiences of fashion, and enhancing creativity and the aesthetic values of fashion.

• 한국표면공학회지
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• 제53권3호
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• pp.124-129
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• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

• 한국초전도ㆍ저온공학회논문지
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• 제5권2호
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• pp.41-45
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• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• 전자공학회논문지A
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• 제31A권9호
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• pp.121-127
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• 1994

The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

• 한국재료학회지
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• 제5권7호
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• pp.802-807
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• 1995

진공증착법으로 제작한 V$_2$O$_{5}$ 박막의 두께 및 결정성에 따른 전기변색 특성을 체계적으로 조사하였다. 증착된 박막은 노란색을 띄고 있었으며 14$0^{\circ}C$ 보다 높은 기판온도에서 증착된 V$_2$O$_{5}$ 박막은 결정질로 낮은 기판온도에서 증착된 박막들은 비정질로 밝혀졌다. 리튬 이온 주입에 따른 V$_2$O$_{5}$ 박막의 광 변조 특성 결과 V$_2$O$_{5}$ 박막의 두께와 결정성에 관계없이 300~500nm 파장영역에서는 산화발색이 500~1100nm 파장영역에서는 환원 발색이 나타났다. 비정질과 결정질 Li$_{x}$ V$_2$O$_{5}$ 박막의 optical band gap 에너지는 리튬 이온 주입양이 증가함에 따라 (x=0.0~0.6) 각각 0.75 [eV], 0.17 [eV]씩 높은 에너지쪽으로 이동하였다. 비정질 Li$_{x}$ V$_2$O$_{5}$ 박막의 coloration efficiency는 근적외선 영역에서는 리튬 이온 주입과 박막두께에 따라 거의 변화가 없었으나 blue와 near-UV 영역에서는 absorption edge가 500nm 파장근처에서 높은 에너지 부근으로 이동됨으로 인하여, 박막두께가 증가하고 리튬 이온주입양이 감소할수록 coloration efficiency가 상당히 증가하는 것으로 나타났다. 그러나 결정질 Li$_{x}$ V$_2$O$_{5}$ 박막의 경우 coloration efficiency는 전파장영역에서 리튬 이온 주입양과 박막두께에 거의 영향을 받지 않는 것으로 밝혀졌다.

• 한국콘텐츠학회논문지
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• 제20권7호
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• pp.195-202
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• 2020

100주년을 맞이하게 된 한국영화는 그간 괄목할 만한 성장을 이루었다. 하지만 외부에 드러난 사실과는 달리 마주하고 있는 고질적인 문제점들이 존재하고 있었다. 대표적으로 수직계열화의 문제, 예술·독립영화에 대한 지원 미비, 영상콘텐츠의 다양성 부재, 수출 관련 부진의 네 가지로 추려졌다. 이에, 한국영화의 지속적인 발전을 위해 본 연구에서는 기회의 창 이론을 활용하여 국내 영화 산업의 발전 방안을 탐색하였다. 연구 결과, 후발추격자로서의 대한민국 영화 산업은 새로운 기술과 패러다임으로의 편승 전략과 기존 디지털 플랫폼 등에 대한 낮은 진입비용을 활용하여 진입하는 전략, 정부의 적극적인 개입 및 규제의 변화를 통해 발전하는 방안이 도출되었다. 이를 통해, 궁극적으로 전체적인 영화생태계가 공생적인 협력을 통해 나아가야 함을 밝혔다.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.439-444
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• 2012

For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.

• Journal of Pharmaceutical Investigation
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• 제17권3호
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• pp.111-126
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• 1987

Methyl methacrylate-butyl methacrylate copolymer (MMBM)-dibutyl phthalate (DBP) films were investigated as a potential topical drug delivery system for the controlled release of nitrofurazone. The kinetic analysis of release data indicated that drug release followed a diffusion-controlled granular matrix model, where the quantity released per unit area is proportional to the square root of time. DBP of several hydrophobic plasticizers selected was found to give the highest release of nitrofurazone. However, hydrophilic plasticizers such as propylene glycol and polyethylene glycol 400 had no controlled release properties and acceptable film formation. The effects of changes in film composition, drug concentration, film thickness, pH of release medium, and temperature on the in vitro release of nitrofurazone were analyzed both theoretically and experimentally. The release rate constant (k') was found to be proportional to DBP content, pH, and the temperature of release medium, but independent of film thickness, and drug concentration in a range of 0.1-0.4% by weight. The linear relationship was found to exist between the log k' and DBP content. The release of nitrofurazone from MMBM-DBP (8:2) films was found to be an energy-linked process. Two energy terms were calculated ; the activation energy for matrix diffusion was 13.45 kcal/mole, and the heat of drug crystal solvation was 27.26-29.34 kcal/mole. Observation of scanning electron micrographs and microscopic photographs showed that the incorporation of DBP in films increased markedly the particle size of nitrofurazone dispersed in the film matrix, comparing with the fine dispersion of nitrofurazone in pure MMBM film alone.

• 한국광학회지
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• 제31권4호
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• pp.169-175
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• 2020

격자의 구조가 간단하고 격자의 대조비가 낮은 SBC 시스템 구성을 위한 무편광 유전체 다층박막 회절격자를 설계하였다. SBC 방법으로 결합한 빔의 빔 품질을 높게 유지하기 위하여 회절격자의 파면 왜곡이 최소화되는 구조를 제안하였으며, 오염에 의한 흡수가 발생하지 않고 회절격자를 제작할 수 있는 구조로 회절격자를 최적화 설계하였다. 설계된 회절격자는 1055 nm 중심파장에서 Littrow 각도로 입사하는 경우 무편광 -1차 회절 효율이 99.36%이었으며, 96% 이상의 무편광 회절 효율을 나타내는 공정 여분이 확보되어 있음을 확인하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.275-280
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• 1997

We have investigated the deposition characteristics of (Ni0.8Fe0.2)20Ag80 thin films as a function of chamber pressure and nitrogen flow rate with scanning electron microscopy(SEM), atomic force microscopy(AFM), XRD and $\alpha$-step. The deposition rate of these film is decreased with increasing the chamber pressure and the nitrogen flow rate. With raising the chamber pressure, the growth mode of thin film is changed from island growth to columnar one, which is probably due to energy of atom. Contrary, the nitrogen flow rate is raised, growth mode is changed from columnar to island one. According to the XRD patterns, the preferred orientation is inhibited as the nitrogen flow rate is kept above 10 sccm, but that is nearly independent on the chamber pressure. When the chamber pressure decrease or the nitrogen flow rate increase, phase separation into permoally and silver is occured.