• Korean Journal of Materials Research
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• v.4 no.1
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• pp.113-116
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• 1994

InSb thin film magnetic sensor, which have been prepared on glass substrate by vacuum evaporation, is investigated in this paper. The dependance of Hall voltage on magnetic field and temperature is examined by Hall effect. The variation of Hall voltage with magnetic field is almost linear at constant current drive but it is deviated from the linearity at constant voltage drive. Hall voltage decreases as the ambient temperature increases, so it is necessary to take into account the temperature effect when the InSb thin film is used as magnetic sensor.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.3
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• pp.15-20
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• 1997

This paper presents the experimental study of the non-contact temperature measurement for the shadow mask of cathode ray tube using InSb sensor. At present, High resolution of CRT(Cathode Ray Tube) is needed broadly; therefore, the measurement of temperature distribution of shadow mask in CRT during operation is important to analyze the thermal deformation of shadow mask. Most of the studies could not measure the temperature distribution of shadow mask precisely. We studied the temperature dis- tribution of shadow mask using InSb photo sensor for 17" cathode ray tube (CRT). Experiments using ther- mocouple are performed to validate the results of non-contact measurement. The results agree well with those results of non-contact method using InSb sensor.nsor.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.33-38
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• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

• Journal of the Korean Chemical Society
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• v.36 no.4
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• pp.496-503
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• 1992

An ISFET urea sensor was fabricated by immobilizing the urease using photosensitive polymer, poly(vinyl alcohol)-SbQ on the H$^+$ sensing $Si_3$$N_4$ thin film of pH-ISFET. The sensor could determine the urea concentration in the range of 1∼50 mg/dl with fast response and good repeatability. For its application to clinical analysis, the interferences of the various materials which cause inhibition in urease catalytic reactions in blood was investigated. The results of the urea measurements in blood plasma using the ISFET urea sensor were compared with these of conventional spectrophotometric method.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.35-40
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• 1993

A FET(field effect transistor) type lipid sensor was fabricated uy immobilizing lipase enzyme on the gate of pH-ISFET($SiO_{2}/Si_{3}N_{4}$). A water soluble polymer, polyvinyl alcohol(PVA) was modified with 1-methyl-4-(formyl-styryl) pyridinium methosulfate(SbQ) to give a photosensitive membrane(PVA-SbQ) in which lipase was immobilized. The optimum photolithographic conditions were ; spin coating speed $5,000{\sim}6,000$ rpm. UV exposure time $20{\sim}30$ seconds, developing time in water $30{\sim}40$ seconds, and vacuum drying time 45 min. at room temperature with the suspension containing PVA-SbQ aqueous solution(SbQ 1mol%, 10 wt %) $200{\mu}L$, bovine serum albumin (BSA) 7.5 mg, and lipase 10 mg. The lipid sensor showed good linear calibration curve in the range of $10{\sim}100$ mM triacetin as a lipid sample.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.302-307
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• 2013

The Sb-doped $SnO_2$ nanowire network sensors were prepared by thermal evaporation of the mixtures between tin and antimony powders. Pure $SnO_2$ nanowire networks showed high sensor resistance in air ($99M{\Omega}$), similar gas responses to 4 diffferent gases (5 ppm $C_2H_5OH$, CO, $H_2$, and trimethylamine), and very sluggish recovery speed (90% recovery time > 800 s). In contrast, 2 wt% Sb-doped $SnO_2$ showed the selective detection toward $C_2H_5OH$ and trimethylamine, relatively low resistance ($176k{\Omega}$) for facile measurement, and ultrafast recovery speed (90% recovery times: 6 - 18 s). The change of gas sensing charactersitics by Sb doping was discussed in relation to gas sensing mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.177-182
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• 2014

In this paper, we propose an energy efficient sink node based MAC protocol for Wireless Sensor Networks (WSNs). The proposed sink node-based MAC (SB-MAC) protocol uses a RB(rapid beacon) frame to save sender's energy consumption and to reduce transmission delay. The RB frame is a modified IEEE 802.15.4 beacon frame. The RB frame contains the length of the sender nodes data. Using this information other nodes except sender and receiver nodes can be stay sleep mode long time to reduce energy consumption. Results have shown that the SB-MAC protocol outperformed other protocols like X-MAC and RI-MAC in terms of packet delivery delay and energy consumption. The SB-MAC protocol is especially energy efficient for the networks with one sink node and many senders.