• Title/Summary/Keyword: InP Gunn 다이오드

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A Evaluation of the Maximum Power of the 94 GHz Gunn Diode Based on the Measured Oscillation Power (발진출력 측정을 통한 94 GHz Gunn Diode의 최대 전력 조사)

  • Lee, Dong-Hyun;Yeom, Kyung-Whan;Jung, Myung-Suk;Chun, Young-Hoon;Kang, Yeon-Duk;Han, Ki-Woong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.5
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    • pp.471-482
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    • 2015
  • In this paper, design and implementation of the 94 GHz Gunn oscillator and the evaluation of the maximum power of the Gunn diode used in the oscillator are presented. The 94 GHz Gunn oscillator is used InP Gunn diode and designed employing a WR-10 waveguide. The designed oscillator is fabricated through machining and its performance is measured. The fabricated oscillator shows an oscillation frequency of 95 GHz, output power of 12.64 dBm, and phase noise of -92.7 dBc/Hz at 1 MHz offset frequency. To evaluation the maximum power of the InP Gunn diode used in oscillator, the oscillator structure is modified to a structure having a diaphram. The height of thick diaphram which is used in the oscillator is varied. As a result, an oscillator has several different load impedances, which makes it possible to plot $G_L-V^2$ plot at the post plane. Using the $G_L-V^2$ plot, the maximum power of used Gunn diode including post is computed to be 16.8 dBm. Furthermore using the shorted and zero bias Gunn diode, the post loss used for DC biasing can be computed. Using the two losses, The maximum power of a InP Gunn diode is computed to be 18.55 dBm at 95 GHz. This result is close to a datasheet.

Design and fabrication of current limiting InP Gunn diode for W-band waveguide FTO (W-band 도파관 FTO 적용을 위한 전류제한 InP Gunn diode 설계 및 제작)

  • Ko, Dong-Sik;Kwak, No-Seong;Kim, Young-Jin;Heo, Jun-Woo;Ko, Pil-Seok;Kim, Sam-Dong;Park, Hyun-Chang;Rhee, Jin-Koo;Chun, Young-Hoon;Lee, Seok-Chul
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.3
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    • pp.45-54
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    • 2014
  • In this paper, We have designed and fabricated 20 InP Gunn diodes using a current limiting epitaxial structure by MINT's optimized fabrication processes. We have also packaged the fabricated InP Gunn diodes using our optimized packaging method, and then designed and fabricated a W-band waveguide FTO to measure characteristics of the packaged InP Gunn diodes. The packaged InP Gunn diode have a ceramic ring, a Au plated stud and a lid, and a Maltese cross. The fabricated InP Gunn diodes have good RF characteristics such as high output powers (11.8~17 dBm) and limiting low currents (less than 400 mA) between 92.9 and 94.78 GHz.