• Animal Systematics, Evolution and Diversity
• /
• nspc6호
• /
• pp.1-126
• /
• 2007

Thirty new species consisting of 24 poecilostomatoid and six siphonostomatoid copepods are described as associates of marine invertebrates from the Moluccas. New taxa in the order Poecilostomatoida are Amarda curvus n. sp., Anchimolgus gracilipes n. sp., A. partenuipes n. sp., A. parangensis n. sp., A. hastatus n. sp., Andrianellus papillipes n. sp., Exodontomolgus communis n. gen. n. sp., Jamescookina moluccensis n. sp., Odontomolgus flammeus n. sp., O. parvus n. sp., O. pavonus n. sp., Paranchimolgus parallelus n. gen. n. sp., and Scyphuliger karangmiensis n. sp. in the family Anchimolgidae; Enalcyonium circulatum n. sp. and E. ceramensis n. sp. in the family Lamippidae; Parastericola rimosus n. gen. n. sp. in the family Lichomolgidae; Pseudanthessius truncus n. sp. and P. planus n. sp. in the family Pseudanthessiidae; Acanthomolgus gomumuensis n. sp., A. dispadactylus n. sp., A. bandaensis n. sp., A. ambonensis n. sp., Kombia avitus n. sp. and Pionomolgus moluccensis n. sp. in the family Rhynchomolgiae. New taxa in the order Siphonostomatoida are Cryptopontius acutus n. sp. in the family Artotrogidae; Asteropontius fungicola n. sp., A. gonioporae n. sp., Collocheres humesi n. sp. and C. amicus n. sp. in the family Asterocheridae; and Molucomes ovatus n. gen. n. sp. in the family Stellicomitidae. Species new to the Moluccas and new host records are also included. Lists of 263 species of associated copepods known from the Moluccas and their 135 species of invertebrate hosts are provided.

• Animal Systematics, Evolution and Diversity
• /
• nspc7호
• /
• pp.1-90
• /
• 2009

Twenty-two new species of poecilostome copepods associated with marine invertebrates are described from the West Indies, Madagascar, and Pacific coast of Panama. They are Anthessius nosybensis n. sp. and Discanthessius solitarius n. gen. n. sp. in the Anthessiidae; Cemihyclops tenuis n. sp., Hemicyclops tripartitus n. sp., H. humesi n. sp., H. magnus n. sp., and Leptinogaster minuta n. sp. in the Clausidiidae; Schedomolgus crenulatus n. sp. and S. parvipediger n. sp. in the Anchimolgidae; Kelleria multiovigera n. sp. in the Kelleridae; Lichomolgus angustus n. sp. and L. fusiformis n. sp. in the Lichomolgidae; Pseudanthessius acutus n. sp., P. asper n. sp., and Tubiporicola pediger n. gen. n. sp. in the Pseudanthessiidae; Acanthomolgus tenuispinatus n. sp. and Notoxynus lokobensis n. sp. in the Rhynchomolgidae; Eupolymniphilus occidentalis n. sp. and E. brevicaudatus n. sp. in the Sabellephilidae; Enalcyonium robustum n. sp. and E. grandisetigerum n. sp. in the Lamippidae; and O. binoviger n. sp. in the Myicolidae. Hemicyclops geminus Stock is synonymized with H. columnaris Humes which is now known as a species of amphi-American distribution. Hemicyclops columnaris Humes, Modiolicola trabalis Humes, and Ostrincola breviseti Ho and Kim are redescribed.

• 마이크로전자및패키징학회지
• /
• 제25권3호
• /
• pp.1-5
• /
• 2018

본 연구에서는 InGaN/GaN multi quantum well (MQW)에서 Indium (In) 도핑효과에 따른 광전기화학적 특성을 관찰하였다. 기판으로는 Sapphire을 사용하였고, 각 Quantum well (QW)을 구성하고 있는 InGaN의 조성을 다르게 하였다. 투과도 측정 결과 일정한 In 조성을 가진 InGaN/GaN MQW에 비해 각 QW의 In 조성을 다르게 한 InGaN/GaN MQW에서 흡수도가 향상되는 것을 확인할 수 있었다. 이는 각각 다른 In 조성을 가진 InGaN 층이 더 넓은 영역의 스펙트럼 에너지를 가지는 빛을 흡수하기 때문인 것으로 생각된다. 광학적 특성을 평가하기 위해 진행한 상온 photoluminescence (PL) 실험을 진행한 결과, 역시 다양한 In 조성을 가진 InGaN/GaN MQW이 더 넓은 파장에서 발광이 나타나는 것을 확인할 수 있었다. 이들 샘플에 대한 광전기화학적 특성평가를 통하여, gradation In 조성을 가지고 있는 InGaN/GaN MQW이 일정한 In 조성을 가지는 InGaN/GaN MQW에 비해 광전기화학적 물분해 능력이 월등히 향상됨을 확인하였다.

• 한국초전도ㆍ저온공학회논문지
• /
• 제18권1호
• /
• pp.33-36
• /
• 2016

Suppression of the superconducting transition temperature ($T_c$) of NbN thin films in superconductor/ferromagnet multilayers has been investigated. Both superconducting NbN and ferromagnetic FeN layers were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. The thickness of FeN films was fixed at 20 nm, while the thickness of NbN films was varied from 3 nm to 90 nm. $T_c$ suppression was clearly observed in NbN layers up to 70 nm thickness when NbN layer was in proximity with FeN layer. For a given thickness of NbN layer, the magnitude of $T_c$ suppression was increased in the order of Si/FeN/NbN, Si/NbN/FeN, and Si/FeN/NbN/FeN structure. This result can be used to design a spin switch whose operation is based on the proximity effect between superconducting and ferromagnetic layers.

• Journal of applied mathematics & informatics
• /
• 제24권1_2호
• /
• pp.437-448
• /
• 2007

Suppose K is a nonempty closed convex nonexpansive retract of a real uniformly convex Banach space E with P as a nonexpansive retraction. Let $T_1,\;T_2\;and\;T_3\;:\;K{\rightarrow}E$ be nonexpansive mappings with nonempty common fixed points set. Let $\{\alpha_n\},\;\{\beta_n\},\;\{\gamma_n\},\;\{\alpha'_n\},\;\{\beta'_n\},\;\{\gamma'_n\},\;\{\alpha'_n\},\;\{\beta'_n\}\;and\;\{\gamma'_n\}$ be real sequences in [0, 1] such that ${\alpha}_n+{\beta}_n+{\gamma}_n={\alpha}'_n+{\beta'_n+\gamma}'_n={\alpha}'_n+{\beta}'_n+{\gamma}'_n=1$, starting from arbitrary $x_1{\in}K$, define the sequence $\{x_n\}$ by $$\{zn=P({\alpha}'_nT_1x_n+{\beta}'_nx_n+{\gamma}'_nw_n)\;yn=P({\alpha}'_nT_2z_n+{\beta}'_nx_n+{\gamma}'_nv_n)\;x_{n+1}=P({\alpha}_nT_3y_n+{\beta}_nx_n+{\gamma}_nu_n)$$ with the restrictions $\sum^\infty_{n=1}{\gamma}_n<\infty,\;\sum^\infty_{n=1}{\gamma}'_n<\infty,\; \sum^\infty_{n=1}{\gamma}'_n<\infty$. (i) If the dual $E^*$ of E has the Kadec-Klee property, then weak convergence of a $\{x_n\}$ to some $x^*{\in}F(T_1){\cap}{F}(T_2){\cap}(T_3)$ is proved; (ii) If $T_1,\;T_2\;and\;T_3$ satisfy condition(A'), then strong convergence of $\{x_n\}$ to some $x^*{\in}F(T_1){\cap}{F}(T_2){\cap}(T_3)$ is obtained.

• Journal of applied mathematics & informatics
• /
• 제39권3_4호
• /
• pp.381-403
• /
• 2021

Consider the three-dimensional system of difference equations $x_{n+1}=\frac{{\prod_{j=0}^{k}}z_n-3j}{{\prod_{j=1}^{k}}x_n-(3j-1)\;\(a_n+b_n{\prod_{j=0}^{k}}z_n-3j\)}$, $y_{n+1}=\frac{{\prod_{j=0}^{k}}x_n-3j}{{\prod_{j=1}^{k}}y_n-(3j-1)\;\(c_n+d_n{\prod_{j=0}^{k}}x_n-3j\)}$, $z_{n+1}=\frac{{\prod_{j=0}^{k}}y_n-3j}{{\prod_{j=1}^{k}}z_n-(3j-1)\;\(e_n+f_n{\prod_{j=0}^{k}}y_n-3j\)}$, n ∈ ℕ₀, where k ∈ ℕ₀, the sequences $(a_n)_{n{\in}{\mathbb{N}}_0$, $(b_n)_{n{\in}{\mathbb{N}}_0$, $(c_n)_{n{\in}{\mathbb{N}}_0$, $(d_n)_{n{\in}{\mathbb{N}}_0$, $(e_n)_{n{\in}{\mathbb{N}}_0$, $(f_n)_{n{\in}{\mathbb{N}}_0$ and the initial values x_-3k, x_-3k+1, …, x₀, y_-3k, y_-3k+1, …, y₀, z_-3k, z_-3k+1, …, z₀ are real numbers. In this work, we give explicit formulas for the well defined solutions of the above system. Also, the forbidden set of solution of the system is found. For the constant case, a result on the existence of periodic solutions is provided and the asymptotic behavior of the solutions is investigated in detail.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.472-472
• /
• 2013

본 논문은 InN와 GaN를 교대로 증착하는 교번성장법을 이용해 제작한 4주기 InN/GaN 박막의 구조적, 광학적, 특성을 X-ray diffraction, Atomic force microscopy, Transmission electron microscopy과 저온 Photoluminescence (PL) 장비를 사용하여 분석한 결과를 보고한다. Fig. 1은 4주기 InN/GaN박막의 XRD 스펙트럼으로 GaN(0002)와 InN(0002)의 회절 신호를 관찰할 수 있다. 그러나 두 피크뿐만 아니라 InN와 GaN 사이에 구분이 되지 않은 추가 신호를 확인할 수 있다. 추가신호는 InN와 GaN 계면에서 발생하는 상호확산 확률로서 해석할 수 있다. Fig. 2는 다양한 조건에서 성장한 InN/GaN 시료의 PL스펙트럼으로 방출 파장은 각각 1,380, 1,290, 1,280, 1,271, 1,246 nm로 측정되었다. 성장 조건 변화에 따른 발광특성 변화를 박막에서 III족 원자 특히, In 원자의 성장 거동에 따른 구속준위(Localized states) 변화로 논의할 예정이다.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권3호
• /
• pp.272-277
• /
• 1995

We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

• Journal of the Optical Society of Korea
• /
• 제17권1호
• /
• pp.16-21
• /
• 2013

In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barriers in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.

• 약학회지
• /
• 제45권1호
• /
• pp.7-15
• /
• 2001

For the purpose of defining the effects of N-acyl groups on the anticonvulsant activities of N-acyl-$\alpha$-amino-glutarimides, various (R)- and (S)-N-acyl-$\alpha$-aminoglutarimide were prepared from the corresponding N-Cbz-glutamic acid and were evaluated their anticonvulsant activities in the MES and PTZ test, including their neurotoxicities. Among the tested compounds, only (R) N-cinnamoyl-$\alpha$-amino-N-methylglutarimide showed anticonvulsant activity in the MES and PTZ test. And the other tested compounds was active in the only PTZ test. The order of anticonvulsant activities in the PTZ test was as followes; for the (R) series, N-4-methoxycinnamoyl = cinnamoyl > N-4-nitrobenzoyl > N-benzoyl > N-phenylacetyl; for the (S) series, N-4-methoxycinnamoyl = N-3-nitrobenzoyl > N-4-nitrobenzoyl = N-cinnamoyl = N-phenylacetyl. From the above results, it was conceivable that the substituted N-acyl group had important effects on the anticonvulsant activities of these compounds. However stereoisomeric deferences in the anticonvulsant activities were not exhibited clearly.