• 제목/요약/키워드: In(III)-

검색결과 13,010건 처리시간 0.042초

하악(下顎) 전돌증(前突症)에 관(關)한 방사선(放射線) 두부계측학적(頭部計測學的) 연구(硏究) (A ROENTGENOCEPHALOMETRIC STUDY ON MANDIBULAR PROGNATHISM)

  • 이기수
    • 대한치과교정학회지
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    • 제9권1호
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    • pp.85-98
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    • 1979
  • This investigation was designed to compare the craniofacial and dental morphology of class III malocclusion with that of normal occlusin in children, and to determine the incidence of various class III craniofacial skeletal patterns. The material selected for this study consisted in standard lateral cephalograms of eighty two Korean children, forty one boys and forty one girls, aged 10 through 12 years, having class III malocclusion, and forty two Korean children, twenty boys and twenty two girls, with normal occlusion in the same age. Using the tracings of the standard lateral cephalograms, various angular and linear measurements were recorded, tabulated and statistically analyzed, and then the class III craniofacial skeletal morphology was divided into various patterns by the degree of SNA and SNB, which respectively were below, within or beyond the normal range of those of normal occlusion. The following characteristics of the craniofacial and dental morphology of class III malocclusion were observed. 1. The cranial base length of class III malocclusion was smaller than that of normal occlusion, and the small saddle angle was a characteristic figure of class III malocclucion. 2. Maxillary length of class III malocclusion was smaller than that of normal occlusion, and point A was retropositioned relative to cranial base but not PNS in class III malocclusion. Maxillary base inclination was not significantly different between the two, but occlusal plane to palatal plane was small in class III malocciusion. 3. The mandibular body length shown no difference between the two, but the mandibular body positioned anteriorly relative to cranial base in class III malocclusion. Ramus height, gonial angle, and mandibular effective length were large in class III malocclusion. Mandibular plane angle and joint angle had no difference between the two, and occlusal plane to mandibular plane angle was large in class III malocclusion. 4. Maxillary incisor inclination was not significantly different between class III malocclusion and normal occlusion, but mandibular incisors positioned and inclined lingually and consequently interincisal angle was large in class III malocclusion. 5. Class III malocclusion was divided into six categories of craniofacial skeletal pattern. The most common class III pattern was found to be one in which the maxilla was within the normal range of prognathism while the mandible extended beyond this range. The pattern in which the maxilla was below the normal range of prognathism while the mandible was within this range was approximately one fifth of the class III sample.

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주목세포 배양에 의한 (10-Deacetyl) Baccatin III 생산 연구 (Studies on the Production of (10-Deacetyl) Baccatin III in Cell Cultures of Taxus baccata Pendula)

  • 유병삼;문원종;김진;김동일;변상요
    • KSBB Journal
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    • 제13권2호
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    • pp.174-180
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    • 1998
  • 유럽주목(Taxus baccata Pendula)현탁 세포 배양에서(10-deacetyl) baccatin III 생산을 증진시키는 연구를 하였다. 높은 초기 당 농도가(10-deacetyl) baccain III 생산을 증진시키는 연구를 하였다. 6% 의 초기 포도당과 자당의 경우 1O-deacetyl baccatin III 생산을 각각 3.배와 2.5배씩 증가시켰다. Baccain III도 초기 포도당 8%에서,초기 자당 6%에서 최대값을 보였다. 일리시터로서 methyl jasmonate는(10-deacetyl) baccatin III 의 생성은 $50{\mu}$M에서 최대치를 보였는데 이는 대조구에 비하여 4.5배 증가한 값이었다.Baccatin III 의 경우 methyl jasmonate $100{\mu}$M에서 생성된 Baccatin III 최대치는 대조구에 비하여 7.배 증가한 값이었다. Methyl jasmonate elicitation 에 의한(1O-deacetyl) baccatin III.과 각 taxane의 시간별 생성 경향을 보면 baccatin III와 10-deacetyl baccatin III는 투여 후 1일 까지 생성이 증가하다 그 후부터 감소하였고, paclitaxel, 10-deacetyl taxol 및 cephalomanine 의 생성이 이어졌다. (10-deacetyI) baccatin III의 생합성을 증가시키기 위하여 전구 물질을 투여하였다. Benzoic acid를 $500{\mu}M$로 투여 하였을 때 10-deacetyl baccatin III 및 baccatin III의 생산은 대조구의 비하여 각각 10배와 13배 증가 하였다. Lysine도 $500{\mu}M$로 투여하였을 때 baccatin III 의 생성량을 대조구 보다 8배 증가시켰다. 증가시켰다.

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Effect of His192 Mutation on the Activity of Alginate Lyase A1-III from Sphingomonas Species A1

  • Yoon, Hye-Jin;Choi, Yong-Jin;Osamu Miyake;Wataru Hashimoto;Kousaku Murata;Bunzo Mikami
    • Journal of Microbiology and Biotechnology
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    • 제11권1호
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    • pp.118-123
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    • 2001
  • The alginate lyase A1-III gene of Sphingomonas species A1 is composed of 1,077 nucleotides, encoding a protein (359 amino acids) with a molecular mass of 40,322 Da. Recombinant A1-III expressed in Escherichia coli exhibited the same full enzymatic activity as native A1-III. In order to identify the critical residue for activity, a site-directed mutation was introduced into the A1-III gene (H192A, His192->Ala). Recombinant A1-III (H192A) exhibited a significant decrease in enzyme activity (one-thirty thousandth of that of A1-III), without any conformational change, as detected by the CD spectra in the far UV region. Also, the chemical modification of wild-type A1-III with methyl 4-nitro benzene sulfonate resulted in a 40% decrease from the initial activity, whereas the same modification of A1-III (H192A) produced no change in the activity. The role of His192 on the catalytic process was also explored based on a model of A1-III docked with mannuronic acid into the active site.

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I급과 III급 부정교합 어린이의 두개안면골 형태의 변화에 관한 연구 (A STUDY ON THE MORPHOLOGICAL CHANGES IN CHILDREN WITH CLASS I AND III MALOCCLUSIONS: CEPHALOMETRIC ANALYSIS)

  • 홍한영;최영철
    • 대한소아치과학회지
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    • 제34권4호
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    • pp.599-612
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    • 2007
  • I급과 III급 부정교합 어린이 두개안면골의 성장양상을 비교하고자, $7{\sim}11$세 146명의 치료전 측모두부계측분석에서 연령에 따른 두개저, 중안면, 하안면 구조물들의 차이를 평가하여 다음과 같은 결과를 얻었다. 1. III급은 I급에 비해 접사골연골결합의 성장이 더 늦은 시기까지 지속되었다. 2. 비상악복합체 전후방적 길이는 III급이 대체로 짧았고 높이는 유사하였다. 3. 하악골 길이와 하악체 길이는 III급이 모든 연령에서 다소 긴 경향이었으나 통계적 유의성은 없었으며, I급과 유사한 성장양상이었다. 4. 상하악골의 치아치조골 높이는 I급과 III급이 대체로 유사한 성장양상이었다. 5. I급은 전두개저 길이가 비상악복합체 및 하악골의 전후방 길이 증가에 뚜렷한 역할을 하였다. 6. III급의 전두개저 길이와 중두개저 길이는 연령이 증가하면서 하악골 길이와 상관성이 커졌다. 사춘기 이전의 시기에는 III급이 I급과 부분적으로 다른 골격적 특징을 지니고 있으나, 성장양상은 전반적으로 유사하게 나타났다. 따라서 III급의 골격성 부조화는 특징적인 골격적 차이가 나타나기 전 조기에 개선시키는 것이 바람직할 것으로 판단된다.

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Surface Preparation of III-V Semiconductors

  • 임상우
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.86.1-86.1
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    • 2015
  • As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

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Electrochemical Behavior of Sm(III) on the Aluminium-Gallium Alloy Electrode in LiCl-KCl Eutectic

  • Ye, Chang-Mei;Jiang, Shi-Lin;Liu, Ya-Lan;Xu, Kai;Yang, Shao-Hua;Chang, Ke-Ke;Ren, Hao;Chai, Zhi-Fang;Shi, Wei-Qun
    • 방사성폐기물학회지
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    • 제19권2호
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    • pp.161-176
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    • 2021
  • In this study, the electrochemical behavior of Sm on the binary liquid Al-Ga cathode in the LiCl-KCl molten salt system is investigated. First, the co-reduction process of Sm(III)-Al(III), Sm(III)-Ga(III), and Sm(III)-Ga(III)-Al(III) on the W electrode (inert) were studied using cyclic voltammetry (CV), square-wave voltammetry (SWV) and open circuit potential (OCP) methods, respectively. It was identified that Sm(III) can be co-reduced with Al(III) or Ga(III) to form AlzSmy or GaxSmy intermetallic compounds. Subsequently, the under-potential deposition of Sm(III) at the Al, Ga, and Al-Ga active cathode was performed to confirm the formation of Sm-based intermetallic compounds. The X-ray diffraction (XRD) and scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS) analyses indicated that Ga3Sm and Ga6Sm intermetallic compounds were formed on the Mo grid electrode (inert) during the potentiostatic electrolysis in LiCl-KCl-SmCl3-AlCl3-GaCl3 melt, while only Ga6Sm intermetallic compound was generated on the Al-Ga alloy electrode during the galvanostatic electrolysis in LiCl-KCl-SmCl3 melt. The electrolysis results revealed that the interaction between Sm and Ga was predominant in the Al-Ga alloy electrode, with Al only acting as an additive to lower the melting point.

Al(III) 응집제의 염기도에 따른 총인 제거효율의 변화 (Changes in the Removal Efficiency of Total Phosphorus by the Basicity of Al(III) Coagulant)

  • 한승우;이철희;이재관;강임석
    • 상하수도학회지
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    • 제26권2호
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    • pp.229-236
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    • 2012
  • 염기도를 달리하여 제조된 PACl에 대한 Al(III)종 분포는 염기도가 높을수록 monomeric Al(III)종은 적어지고, precipitate Al(III)종은 증가하는 것으로 나타났다. 염기도 13.6%의 경우에서는 monomeric Al(III)종이 81%, polymeric Al(III)종이 19%, precipitate Al(III)종은 0%로 monomeric Al(III)종이 주종을 이루고 있었다. 염기도 13.6%의 경우에서 재안정화 없이 80% 정도의 탁도제거 효율을 유지하고 있었으며, $UV_{254}$ 제거효율이 향상되는 것은 낮은 응집 pH 범위에서 유기물 응집효과가 우수하게 나타나기 때문으로 판단된다. 그리고 13.6% 염기도를 가진 PACl이 T-P 제거효율 및 $PO_{4}-P$의 제거효율이 가장 우수한 것으로 나타났으며 이는 높은 monomeric Al 성분에 기인하리라 판단된다.

KSR-III 추진제 탱크 압력 조절용 레귤레이터 개발 (The Development of Pressure Regulator of Propellant Tank for KSR-III)

  • 정영석;조기주;조인현;김용욱;오승협
    • 한국추진공학회지
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    • 제6권4호
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    • pp.47-58
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    • 2002
  • 압력조절 레귤레이터는 KSR-III 추진제 탱크의 압력 조절용으로 개발하였다. KSR-III 가압 시스템은 가압 탱크, 압력조절용 레귤레이터, 추진제 탱크로 구성된 가장 기본적인 시스템이며 레귤레이터는 헬륨 탱크, 파이로밸브, 헬륨주입밸브와 더불어 가장 핵심적인 부품이다. 1차 시제품으로 기밀, 강도, 기본 성능을 만족하는 상세 설계를 완성하였고 2차 시제품으로 추진기관 종합수류시험을 수행하였다. 2차시험을 통해서 밸브의 용량(Cv)을 늘려야 할 필요성이 나타났다. 3차 시제품에 이를 개선하였으며 추진기관 종합 실추진제 시험과 연소시험을 통해 최종 검증하였다.

소 허피스바이러스 gIII 유전자 크론닝 및 발현 (Cloning and Expression of Bovine Herpesvirus-1 gIII of Korean Isolate PQ Strain)

  • 권창희;민부기
    • 대한바이러스학회지
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    • 제26권2호
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    • pp.173-179
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    • 1996
  • The gene encoding gIII of bovine herpesvirus type 1 (BHV-1) PQ strain was cloned and expressed in baculovirus. Although the gIII gene is located in Hind III I fragment as the case of the other BHV-1 strains, differences in size and restriction endonuclease site within the fragment were identified. The gIII expression was predominantly detected on the surface on insect cells by indirect immunofluoresecnce assay using monoclonal antibody. The western blotting analysis also revealed the presence of expressed protein of a similar molecular size to the original gIII protein. The immunogenicity of expressed protein were tested in guinea pigs. The immunized guinea pigs with expressed protein developed the neutralizing antibodies against BHV-1.

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수용액중에서의 Nd(III) 및 Ho(III)의 Hypersensitive Transition에 관한 연구 (The Hypersensitive Transitions of Nd(III) and Ho(III) Complexes in Aqueous Solution)

  • 신대현;김종혁;윤석승
    • 대한화학회지
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    • 제26권3호
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    • pp.148-154
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    • 1982
  • 수용액중에서 Nd(III)와 Ho(III) 이온의 hypersensitive 전이대의 oscillator strength에 미치는 몇가지 리간드의 효과를 연구하였다. 이때에 사용한 리간드는 furoate, anthranilate와 squarate이다. 각 착화합물에 있어서 금속-리간드 결합간에 존재하는 공유결합성을 리간드의 $pK_a$와 착화합물의 hypersensitive 전이대의 oscillator strength 사이에 정립된 관계에 근거를 두고 논하였다.

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