• 전기의세계
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• v.24 no.5
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• pp.91-96
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• 1975

In this paper, with a view to study the impurity effect, Ge-Si-Te memory devices are investigated experimentally about the dependence of temperature and frequency. Conductivity depends upon temperature and frequency and it is some-what influenced by heat treatment. With increasing frequency, conductivity has a tendency to be independent of temperature. We found that switching time and threshold voltage are reduced by it.

• Applied Chemistry for Engineering
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• v.27 no.3
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• pp.335-341
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• 2016

In this study, impurity effects on diffusive-convection flow fields by physical vapor transport under terrestrial and microgravity conditions were numerically analyzed for the mixture of $Hg_2Cl_2-I_2$ system. The numerical analysis provides the essence of diffusive-convection flow as well as heat and mass transfer in the vapor phase during the physical vapor transport through velocity vector flow fields, streamlines, temperature, and concentration profiles. The total molar fluxes at the crystal regions were found to be much more sensitive to both the gravitational acceleration and the partial pressure of component $I_2$ as an impurity. Our results showed that the solutal effect tended to stabilize the diffusive-convection flow with increasing the partial pressure of component $I_2$. Under microgravity conditions below $10^{-3}g_0$, the flow fields showed a one-dimensional parabolic flow structure indicating a diffusion-dominant mode. In other words, at the gravitational levels less than $10^{-3}g_0$, the effects of convection would be negligible.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.426-432
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• 2011

The oxidation behavior of CVD ${\beta}$-SiC was investigated for Very High Temperature Gas-Cooled Reactor (VHTR) applications. This study focused on the surface analysis of the oxidized CVD ${\beta}$-SiC to observe the effect of impurity gases on active/passive oxidation. Oxidation test was carried out at $950^{\circ}C$ in the impurity-controlled helium environment that contained $H_2$, $H_2O$, CO, and $CH_4$ in order to simulate VHTR coolant chemistry. For 250 h of exposure to the helium, weight changes were barely measurable when $H_2O$ in the bulk gas was carefully controlled between 0.02 and 0.1 Pa. Surface morphology also did not change based on AFM observation. However, XPS analysis results indicated that a very small amount of $SiO_2$ was formed by the reaction of SiC with $H_2O$ at the initial stage of oxidation when $H_2O$ partial pressure in the CVD ${\beta}$-SiC surface placed on the passive oxidation region. As the oxidation progressed, $H_2O$ consumed and its partial pressure in the surface decreased to the active/passive oxidation transition region. At the steady state, more oxidation did not observable up to 250 h of exposure.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.581-588
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• 1997

The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8870-8878
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• 2015

During the carbon-dioxide capture and storage(CCS) process, $CO_2$ is captured from large point source, and then injected and stored in stable geological structure for thousands and more years. Inside the captured $CO_2$ flow, various impurities, such as $N_2$, $O_2$, argon, etc, are included inevitably. These impurities affect on the CCS process on various aspects. In this study, we designed and built experimental facility to evaluate the various impurity effect on the $CO_2$ pipeline flow, and analyzed the effect of argon ratio and pressure variation on the pressure drop of $CO_2$ flow. By comparing experimental data with 4 kinds of pressure drop model, we figured out and recommended the Cicchitti's model since it showed most accurate result among compared models in this study.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.134-136
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• 2001

In this paper, we investigated the electrical and piezoelectric characteristics of $Pb(Sb,Nb)O_3-Pb(Zr,Ti)O_3$ for piezoelectric transformer and actuator etc. Effect of $WO_3$ addition($0\;wt%{\sim}0.6\;wt%$) on the PSN-PZT ceramic was investigated. Anisotropic properties of electromechanical coupling factor and piezoelectric properties were proved to be varied with amount of $WO_3$ impurity and sintering temperature($1100{\sim}1300^{\circ}C$). The electromechanical coupling factor $k_p$ of 0.41 and the mechanical quality factor am of 1243 were obtained from the specimen with 0.6 wt% $WO_3$ addition sintered at $1100^{\circ}C$ Experimental results indicated that the PZT-PSN ceramics with $WO_3$ impurity can be effectively used for piezoelectric transformer and actuator. etc.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.141-154
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• 1996

Intrinsic layers of homoepitaxial InP grown by the hydride vapor phase epitaxy (VPE) technique were investigated by Fourier-transform photoluminescence(FTPL) and variable temperature Hall measurements. The effect of process variables (i.e., source zone temperature and inlet mole fractions of HCl and $PH_{3}$) on the backgroudn impurity levels was investigated. The background carrier concentration was found to decrease with decreasing source zone temperature and increasing HCl, but was relatively independent of $PH_{3}$ for the range of mole fraction studied. The presence of background donors and acceptors was clearly verified in the FTPL spectra, and the major impurities were tentatively identified as Si donors and Zn acceptors as well as some unidentified acceptors.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.4
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• pp.291-298
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• 2008

Carbon monoxide(CO) is one of the contamination source in reformed hydrogen fuel with an influence on performance of polymer electrolyte membrane fuel cell(PEMFC). The studies of CO injection presented here give information about poisoning and recovery processes. The aim of this research is to investigate cell performance decline due to carbon monoxide impurity in hydrogen. Performance of PEM fuel cell was investigated using current vs. potential experiment, long time(10 hours) test, cyclic feeding test and electrochemical impedance spectra. The concentrations of carbon monoxide were changed up to 10 ppm. Performance degradation due to carbon monoxide contamination in anode fuel was observed at high concentration of carbon monoxide. The CO gas showed influence on the charge transfer reaction. The performance recovery was confirmed in long time test when pure hydrogen was provided for 1 hour after carbon monoxide had been supplied. The result of this study could be used as a basis of various reformation process design and fuel quality determination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.88-90
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• 1990

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].