• Journal of Magnetics
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• v.6 no.1
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• pp.9-12
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• 2001

The dependence of the magnetoimpedance effect (MI) on magnetic properties has been investigated in mumetal thin films prepared by rf magnetron sputtering. Coercivity of thin films prepared at 400 W was about 0.4 Oe, and the magnetic anisotropy field of films deposited under a uniaxial magnetic field decreased with increasing film thickness. The saturation magnetization of mumetal films increased with rising input power and thickness and was smaller than that of permalloy films. Transverse incremental Permeability (TPR) of films of 1$\mu m$ thick increased with increasing effective permeability. The magneto impedance ratio (MIR) was proportional to TPR in films 1$\mu m$ thick but in spite of lower effective permeability at higher thicknesses, MIR increased due to skin effect. The height of the double peaks in the MIR curves decreased with decreasing anisotropy and thickness. The maximum MIR value for a 4$\mu m$ thick 75% at 36.5 MHz.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• Bulletin of the Korean Chemical Society
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• v.17 no.8
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• pp.715-719
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• 1996

Thin films of polyaniline (PANI) salts were in situ deposited on a Pt plate during either chemical polymerization or electrochemical polymerization. The oxidation states of the salt films were controlled by the applied DC potential. AC impedance of the Pt/PANI electrode were measured in monomer-free 1 N HCl solution in order to investigate the electrodic properties of the films at the following applied DC potentials: 0, 0.45 and 0.75 V vs. SCE. Very small differences in film conductivity according to its oxidation state were observed by analysis of the impedance spectra, the reasons of which are complicated by enriched water content in the film and possible decrease in the film thickness during the measurements. The electrochemical activity of the film/solution interface varied with its oxidation state. Stability of the film in 1 N HCl solution was also evaluated by impedance and cyclic voltammetry measurements.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.313-320
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• 1995

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.417-421
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• 2016

We improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC) by preparing a working electrode (WE) with localized surface plasmon resonance (LSPR) by inducing Au thin films with thickness of 0.0 to 5.0 nm, deposited via sputtering. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the microstructure of the blocking layer (BL) of the Au thin films. Micro-Raman measurement was employed to confirm the LSPR effect, and a solar simulator and potentiostat were used to evaluate the photovoltaic properties, including the impedance and the I-V of the DSSC of the Au thin films. The results of the microstructural analysis confirmed that nano-sized Au agglomerates were present at certain thicknesses. The photovoltaic results show that the ECE reached a value of 5.34% with a 1-nm thick-Au thin film compared to the value of 5.15 % without the Au thin film. This improvement was a result of the increase in the LSPR of the $TiO_2$ layer that resulted from the Au thin film coating. Our results imply that the ECE of a DSSC may be improved by coating with a proper thickness of Au thin film on the BL.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.477-480
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• 2004

We studied the characteristics of impedance and electromechanical coupling coefficient in ZnO and AIN thin films by using resonance frequency spectrum method. The response peak of impedance decreased with the decrease of thickness of piezoelectrics, the number of mode of response peak increased with the increase of substrate thickness. An error of $k_{t}^{2}$ estimated from input $k_{t}^{2}$ increased as the thickness of piezoelectrics decreased and the thickness of substrate increased. Also, the error was increased in case of a large acoustic impedance of substrate. It was found that the composite resonator operating in optimized condition could be designed through the resonance frequency spectrum analysis of composited resonator consisted of piezoelectric thin film and substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.459-466
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• 1996

A great amount of effort has been devoted to the constant improvement of such basic performance as dirvability, safety and enviromental protection. As a result, the total combination of various technologies has made it possible to produce safer and more comfortable automobiles. Among these technologies, plasma and thin film techniques are mainly cocerned with sensors, optics, electronics and surface modification. This paper first describes a concept of thin film processing in materials synthesis for sensors based on particle-surface interaction during deposition to provide a long life sensor applicable to sutomobiles. Some examples of parctical application of thin films to sensors are then given. These include(1) a thin films strain gauge for gravity sensors, (2) a giant magneto resistance film for speen sensors, and (3) a Magneto-impedance sensors fordetection of low magnetic field. Further progress of sophisticated thin film technology must be considered in detail to explore advanced thin film materials science and to ensure the field reliability of future sensor devices for automobile.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.411-415
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• 2001

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of tin oxide $(SnO_2)$ thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the cathode material by an analysis with optical emission spectroscopy as well as by the plasma impedance. The etching ability of this plasma was evaluated by an emission intensity as well as by the evaluation of impedance using a plasma I-V curve.