• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.30 no.6_1
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• pp.519-528
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• 2012

It was pointed out that the terrain distortion of SAR image is even worse than that of optical image although SAR imagery has the advantages of being independent of solar illumination and weather conditions. It is thus necessary to correct terrain distortion in SAR image for various application areas to integrate SAR and optical image information. There has to be a clear evaluation of terrain correction of high resolution SAR image according to the quality of DEM because the DEM of study site is generally used in the process of terrain correction. To achieve this issue, this paper compared the effects of quality of Digital Elevation Model(DEM) in the process of terrain correction of high resolution SAR images, using the DEM produced from 1:5000 topographic contour maps, LiDAR DEM, ASTER GDEM, SRTM DEM. We used TerraSAR-X and Cosmo-SkyMed, as the test data set, which are constructed on the same X-band SAR system as KOMPSAT-5. In order to evaluate quantitatively the correction results, we conducted comparative evaluation with the KOMPSAT-2 ortho image of the same region. The evaluation results showed that the DEM produced from 1:5000 topographic contour maps achieved successful results in the terrain correction of SAR image compared with the other DEM data, and the widely used SRTM DEM data in various applications was not suitable for the terrain correction of high resolution SAR images.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of Internet Computing and Services
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• v.16 no.1
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• pp.29-37
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• 2015

In this paper, we propose a robust pre-processing module for camera-based Optical Music Score Recognition (OMR) on mobile device. The captured images likely suffer for recognition from many distortions such as illumination, blur, low resolution, etc. Especially, the complex background music sheets recognition are difficult. Through any symbol recognition system, the staff line height and staff line space are used many times and have a big impact on recognition module. A robust and accurate staff line height and staff line space are essential. Some staff line height and staff line space are proposed for binary image. But in case of complex background music sheet image, the binarization results from common binarization algorithm are not satisfactory. It can cause incorrect staff line height and staff line space estimation. We propose a robust staff line height and staff line space estimation by using run-length encoding technique on edge image. Proposed method is composed of two steps, first step, we conducted the staff line height and staff line space estimation based on edge image using by Sobel operator on image blocks. Each column of edge image is encoded by run-length encoding algorithm Second step, we detect the staff line using by Stable Path algorithm and removal the staff line using by adaptive Line Track Height algorithm which is to track the staff lines positions. The result has shown that robust and accurate estimation is possible even in complex background cases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.28 no.9
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• pp.343-349
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• 2016

Due to the recent increase in lighting energy consumption in buildings, there are a growing number of studies seeking solutions this problem. The effectiveness of light-shelves as natural lighting systems to solve this problem has been recognized, and various studies regarding such systems are being carried out currently. However, the lighting efficiency of light-shelves decreases if illumination intensity is low-such as at night time, and it also obstructs the views of building occupants. Therefore, the purpose of this study is to examine a movable drawer type light-shelf which allows for the width of the reflector to be adjusted and verify its performance through a simulated test-bed. The following conclusions were reached. 1) The purpose of this study is to solve the problem previously associated with the light-shelf system- of obstructed views-by responding to external environments and minimizing the width of the light-shelf at night time when the efficiency of the light-shelf declines. 2) The proper variables of the movable drawer type light-shelf which enables the width adjustment of the reflector were ascertained in this study according to four solar terms : a width of 0.6 m at an angle of $20^{\circ}$, a width of 0.4m with an angle of $20^{\circ}$, and a width of 0.1 m with an angle of $20^{\circ}$ were determined for the summer solstice, fall/spring equinoxes, and winter solstice respectively; revealing that width adjustment of the light-shelf is a significant factor. 3) The movable drawer type light-shelf which enables${\backslash}$width adjustment of the reflector suggested in this study can reduce the lighting energy consumption by 18.7% and 14.3% in comparison to previous light-shelves with a fixed width of 0.3 m and 0.6m, indicating that it is effective for saving energy.

• The Journal of Art Theory & Practice
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• no.8
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• pp.123-144
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• 2009

The history of art during the first half of the last decade was founded the discussion with highly impressive and confident. The art might establish its unique area based on self recognition at that era. The self-confidence of modern art may be possible on enlightenment, which is the firm relationship for knowledge and reality. However the faith of modernism which shows rational tendency, objective, and the existence of universal knowledge has been drastically doubted and criticized thereafter. A internal ideological system which had leaded the modern art was exhausted. Postmodernism revolved to the dramatic openness leaning against the deoedipalizational confession. According to the dissipation of the vitality of modern art postmodern art has been evolved and then various phenomena which follow the trends has been emerged. The avant-garde and resisteive attribute of modern art was diluted fast due to the influx of popular culture. As time goes it can be attracted by spectacle taste than metaphysical peculiarity. It has to inevitably justified the drift of light and quick themes, contents, and images. Such as these phenomena realistically shows fact that postmodern art had been failed to open a new chapter of consilience which intermediates beauty and usual communication to overcome the solipsism of modernism. A trial to pursuit the opened esthetics conceived more 'heroic' 'Star-Subject' than before by dismantling the modern 'Hero-Subject'. Postmodernism has been recorded as a regression of art, which is the technology of profound spirit that mitigates antagonism and confrontation and mediates mutual encountering of human being. Prevailing of postmodern freedom had been accompanied by popularity, osetentation consumption, marketing, gambling level exitement, mixtures of desires with price fluctuations. We witness 'self-confinement' and 'lasting absence of exit' phenomena in postmodernism ideology and practice. We have to deal postmodernism as an 'ideology which closes the discussion for the future' in the context of 'absence of way' at this point. We are going to investigate how postmodern ideology and practice takes part in the prospection beyond thereafter through discussion. We also pay attention to the 'absence of prospection' as a internal problem in itself nevertheless mention the three merge points such as tradition or memory, earthy thought, the self who confrontation others as the clue of prospecting thought which is allowing coming over postmodern absence.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• KIPS Transactions on Software and Data Engineering
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• v.12 no.6
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• pp.267-274
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• 2023

In this paper, a method for estimating the illuminant chromaticity of a scene for an input image is proposed. The illuminant chromaticity is estimated using the illuminant reference region. The conventional method uses a certain number of reference lighting information. By comparing the chromaticity distribution of pixels from the input image with the chromaticity set prepared in advance for the reference illuminant, the reference illuminant with the largest overlapping area is regarded as the scene illuminant for the corresponding input image. In the process of calculating the overlapping area, the weights for each reference light were applied in the form of a Gaussian distribution, but a clear standard for the variance value could not be presented. The proposed method extracts an independent reference chromaticity region from a given reference illuminant, calculates the characteristic values in the r-g chromaticity plane of the RGB color coordinate system for all pixels of the input image, and then calculates the independent chromaticity region and features from the input image. The similarity is evaluated and the illuminant with the highest similarity was estimated as the illuminant chromaticity component of the image. The performance of the proposed method was evaluated using the database image and showed an average of about 60% improvement compared to the conventional basic method and showed an improvement performance of around 53% compared to the conventional Gaussian weight of 0.1.