• 한국응용과학기술학회지
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• 제33권4호
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• pp.734-740
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• 2016

The micron-sized indium zinc tin oxide (IZTO) particles were prepared by spray pyrolysis from aqueous precursor solution for indium, zinc, and tin and organic additives such as citric acid (CA) and ethylene glycol (EG) were added to aqueous precursor solution for indium, zinc, and tin. The obtained IZTO particles prepared by spray pyrolysis from the aqueous solution without organic additives had spherical and filled morphologies, whereas the IZTO particles obtained with organic additives had more hollow and porous morphologies. The micron-sized IZTO particles with organic additives were changed fully to nano-sized IZTO particles, whereas the micron-sized IZTO particles without organic additives were not changed fully to nano-sized IZTO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. Surface resistances of micron-sized IZTO's before post-heat treatment and wet-ball milling were much higher than those of nano-sized IZTO's after post-heat treatment and wet-ball milling. From IZTO with composition of 80 wt. % $In_2O_3$, 10 wt. % ZnO, and 10 wt. % $SnO_2$ which showed a smallest surface resistance IZTO after post-heat treatment and wet-ball milling, thin films were deposited on glass substrates by pulsed DC magnetron sputtering, and the electrical and optical properties were investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.571-571
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• 2013

본 연구에서는 유연 유기태양전지용 플렉시블 InZnSnO (IZTO)/PEDOT:PSS 투명전극을 제작하고 그 특성을 연구하였다. 이를 위해 선형 대향 타겟 스퍼터(Linear Facing Target Sputtering: LFTS) 시스템을 이용하여 그라비아 프린팅된 PEDOT:PSS/PET 매우 얇은 IZTO 투명전극을 성막하였다. 일반적으로 PEDOT:PSS 전극은 수분/산소에 약하지만 매우 얇은 IZTO passivation 층을 코팅함으로써 PEDOT:PSS의 안정성을 향상시키는 동시에 전기적 특성을 향상시킬 수 있다. 이러한 PEDOT:PSS 기반 하이브리드 투명 전극을 제작하기 위해 IZTO 두께를 5 nm에서 40 nm 까지 조절하여 IZTO/PEDOT:PSS 다층 투명전극을 제작하였으며, 이때 IZTO 두께 변수에 따라 제작된 하이브리드 IZTO/PEDOT:PSS 투명전극의 전기적, 광학적 특성을 분석하였다. 최적화된 20 nm의 IZTO의 두께에서 IZTO/PEDOT:PSS 하이브리드 투명전극은 PEDOT:PSS 단일층으로 제작된 플렉서블 투명전극과 동일한 우수한 유연성을 가짐과 동시에 PEDOT:PSS 단일층보다 현저히 낮은 면저항 값(353.6 ohm/sq.)과 높은 광투과율(83.09%)을 나타내었다. 최적화된 IZTO/PEDOT:PSS 투명전극으로부터 제작된 플렉서블 유기태양전지는 IZTO의 passivation 특성으로 인해 PEDOT:PSS 단일막을 이용하여 제작된 플렉시블 투명전극보다 우수한 소자효율을(FF: 59.04%, Voc: 0.588 V, Jsc: 7.554 mA/cm2, PCE: 2.622%) 나타내었다. 이러한 결과들은 LFTS 공법으로 PEDOT:PSS위에 성막된 IZTO passivation 층이 PEDOT:PSS의 특성을 향상시킬 뿐만 아니라, PEDOT:PSS의 안정성도 향상시킬 수 있기 때문에 기존 PEDOT:PSS 기반 투명 전극의 문제점을 해결할 수 있는 해결책으로 적용이 가능하다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.601-604
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• 2008

We report on the Ag thickness effect on the electrical and optical properties of indium zinc tin oxide (IZTO)-Ag-IZTO multilayer electrode grown on a PET substrate and the surface plasmon effect of Ag layer on the optical properties of IZTO-Ag-IZTO electrode. Using an IZTO-Ag-IZTO multilayer with a total thickness below ~80 nm, we can obtain high-quality flexible electrode with very low sheet resistance, high transmittance, high work function and superior flexibility.

• 한국정보통신학회논문지
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• 제21권3호
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• pp.578-584
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• 2017

PET (Polyethylene terephthalate) 플라스틱 기판 위에 IZTO (In-Zn-Sn-O) 박막을 증착하기 전에, $SiO_2$ 버퍼층을 전자빔 증착 방법으로 100 nm 의 두께로 증착하였다. IZTO 박막은 RF 마그네트론 스퍼터링법으로 RF 파워는 30~60 W 로, 공정 압력은 1~7 mTorr 로 변화시켜가며 $SiO_2$/PET 에 증착하여 IZTO 박막의 구조적, 전기적, 광학적 특성을 분석하였다. RF 파워 50 W 와 공정 압력 3 mTorr 에서 증착한 IZTO 박막이 $4.53{\times}10^{-3}{\Omega}$ 의 제일 큰 재료평가지수와 이때 $4.42{\times}10^{-4}{\Omega}-cm$ 의 비저항과 $27.63{\Omega}/sq.$ 의 면저항으로 가장 우수한 전기적 특성을 보였고, 가시광 영역 (400~800 nm) 에서의 평균 투과도도 81.24 % 로 가장 큰 값을 나타내었다. AFM 으로 IZTO 박막의 표면 형상을 관찰한 결과, 모든 IZTO 박막이 핀홀이나 크랙 같은 결함이 없는 표면을 가지며, RF 파워 50 W 와 공정 압력 3 mTorr에서 증착한 박막이 1.147 nm 의 가장 작은 표면 거칠기를 나타내었다. 이로부터 $SiO_2$/PET 구조위에 증착한 IZTO 박막이 차세대 플렉시블 디스플레이 소자에 응용될 수 있는 매우 유망한 재료임을 알 수 있었다.

• 한국세라믹학회지
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• 제52권4호
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.203-204
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• 2009

The Indium Zinc Tin Oxide (IZTO) thin films for flexible display electrode were deposited on poly carbonate (PC) and polyethersulfone(PES) and glass substrates at room temperature by facing targets sputtering (FTS). Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90 wt.%, $SnO_2$ 10 wt.%), the other is IZO ($In_2O_3$ 90 wt.%, ZnO 10 wt.%). As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a Hall Effect measurement system. As a result, we could prepare the IZTO thin films with the resistivity of under $10^{-4}\;[{\Omega}{\cdot}cm]$ and IZTO thin films deposited on glass substrate showed an average transmittance over 80% in visible range (400~800 nm) in all IZTO thin films except in IZTO thin film deposited at $O_2$ gas flow rate of 0.1[sccm].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.227-227
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• 2012

본 연구에서는 RF스퍼터링법에 의하여 glass substrate에 In-Zn-Sn-O (IZTO)를 Zn 성분에 변화를 주면서 $350{\AA}$ 만큼 증착시키고, 1시간 동안 $350^{\circ}C$로 열처리 하였다. In:Zn:Sn의 성분 비율은 20:48:32 (IZTO1), 13:60:27 (IZTO2)이다. 박막의 전자적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy), UV-Spectrometer를 이용하여 연구하였고, 박막의 전기적 특성은 van der Pauw 법을 이용하여 측정하였다. XPS측정결과, IZTO박막은 In-O, Sn-O and Zn-O의 결합을 가진다. REELS를 이용해 Ep=1,500 eV에서의 밴드갭을 얻어보면, $350^{\circ}C$로 열처리 한 박막은 열처리를 하지 않은 것에 비해 밴드갭이 IZTO1는 3.36 eV에서 3.54 eV로, IZTO2는 3.15 eV에서 3.31 eV로 증가하였다. 반면에 Zn 함량이 증가할수록 밴드갭이 감소하는 것을 확인할 수 있었다. 이 값은 UV-Spectrometer를 이용한 광학적 밴드갭과 일치하였다. 또한 van der Pauw method를 이용한 전기적 특성 분석 결과, 열처리를 하기 전에 비하여 carrier concentration이 IZTO1는 $-4.4822{\times}10^{18}cm^{-3}$에서 $-2.714{\times}10^{19}cm^{-3}$로, IZTO2는 $-3.6931{\times}10^{17}cm^{-3}$에서 $-1.7679{\times}10^{19}cm^{-3}$로 증가하였다. 반면에 Resistivity는 IZTO1의 경우 $1.7122{\times}10^{-1}{\Omega}{\cdot}cm$에서 $5.5496{\times}10^{-3}{\Omega}{\cdot}cm$로, IZTO2는 $1.3290 {\Omega}{\cdot}cm$에서 $1.3395{\times}10^{-2}{\Omega}{\cdot}cm$로 감소하였다. 그리고 UV-Spectrometer를 이용한 광학적 특성을 측정해본 결과, 가시광선영역인 380~780 nm에서의 투과율이 83%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.168-168
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• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.92-92
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• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.