• 공업화학
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• 제17권6호
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• pp.644-647
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• 2006

Indium zinc oxide (IZO) 박막이 radio frequency reactive magnetron sputtering 방법을 이용하여 증착되었으며 여러 가지 공정변수 중에서 $O_{2}$ 농도와 증착 후에 열처리 온도를 선택하여 박막의 광학적, 전기적 그리고 구조적인 특성을 조사하였다. $O_{2}$ 농도가 증가할수록 IZO 박막의 증착속도는 감소하였고 저항도는 증가하였으며 투과도는 약간 증가하는 경향을 보였다. Atomic force microscopy 분석의 결과로부터, 순수한 아르곤에서 증착된 박막의 표면이 가장 거칠었고 $O_{2}$가 첨가된 조건에서 증착된 박막들은 덜 거칠었다. 순수한 아르곤의 조건에서 증착된 IZO 박막들을 각각 250, 350, 그리고 $450^{\circ}C$에서 열처리하였다. 투과도와 저항도는 순수한 아르곤 조건에서 증착된 시료에서 가장 낮게 나타났고 $250^{\circ}C$의 열처리 온도까지 낮은 저항도가 유지되었다. 박막의 표면은 높은 온도에서 열처리된 시료일수록 더 매끄러운 표면을 가졌다. X-ray diffraction 결과를 통해서 높은 온도에서 열처리된 시료일수록 박막의 결정화가 잘 이루어진 것을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.50-54
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• 2018

In this study, a femtosecond laser pre-annealing technology based on indium zinc oxide (IZO) thin-film transistors (TFTs) was investigated. We demonstrated a stable pre-annealing process to analyze the change in the surface structures of thin-films, and we improved the electrical performance. Furthermore, static and dynamic electrical characteristics of IZO TFTs with n-channel inverters were observed. To investigate the static and dynamic responses of our solution-processed IZO TFTs, simple resistor-load-type inverters were fabricated by connecting a $1-M{\Omega}$ resistor. The femtosecond laser pre-annealing process based on IZO TFTs showed good performance: a field-effect mobility of $3.75cm_2/Vs$, an $I_{on}/I_{off}$ ratio of $1.8{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Our IZO-TFT-based N-MOS inverter performed well at operating voltage, and therefore, is a good candidate for advanced logic circuits and display backplane.

• Bulletin of the Korean Chemical Society
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• 제28권12호
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• pp.2396-2400
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• 2007

Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process. Even at room temperature, highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 × 10?3 Ω·cm. These values are comparable with those of commercially available ITO. Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied. At the current density of 1 × 103 A/m2, the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m2) of the light emitted from the devices, which are as good as the control device built on a commercial ITO anode.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.76.2-76.2
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• 2007

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1402-1405
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• 2006

Using a indium zinc oxide (IZO) alloy target with a ratio of 90:10 in wt%, highly transparent conducting oxide (TCO) thin films are prepared on polyethersulfone (PES) substrates by lowfrequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. Experiments were carried out as a function of applied voltage. At optimal deposition conditions, thin films of IZO with a sheet resistance of 29 ohm/sq. and an optical transmission of over 82 % in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation or any additional post-deposition annealing treatment.

• 한국진공학회지
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• 제14권4호
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• pp.238-244
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• 2005

rf 마그네트론 스퍼터링 방법을 사용하여 유리기판 위에 $In_2O_3$ : ZnO=90 : 10 $wt.\%$의 조성비를 갖는 indium-zinc-oxide(IZO) 박막을 산소분압 $O_2$/(Ar +$O_2$) : $0\~10 \%$의 Ar가스 분위기에서 제작하였다. IZO 박막의 면저항은 증착 시 유입되는 산소량이 증가함에 따라 현저하게 증가하는데, 순수한 Ar 가스 분위기에서 증착될 때 $3.7\times10^{-4}\Omega\cdot$ cm 정도의 가장 낮은 비저항과 가시광 영역에서 평균 $85\%$ 이상의 투과율을 보이는 박막이 얻어진다. $600^{\circ}C$의 다양한 환경에서 옅처리될 경우, 순수한 Ar 분위기에서 성막된 IZO 박막의 전기적 저항 변화는 박막 내에 포함된 In 또는 InO와 같은 금속 성분들의 결정화와 산화에 의해 설명되어 진다. 또한 IZO 박막을 공기 중에서 열처리하는 동안 $600^{\circ}C$ 이상에서 현저하게 일어나는 산소 흡착과 구조 변화에 의한 전기적 특성들이 조사된다.

• Current Photovoltaic Research
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• 제3권3호
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.2059-2059
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• 2011

This study focused on the performance characteristics of dye-sensitized solar cell electrodes used in the IZO films were investigated. The experiment measured an sheet resistance and transmittance. Measured results showed 90% transmittance, sheet resistance also 18.3 ${\Omega}$/cm]. The results were indicated applications of dye-sensitized solar cell and optoelectronic devices, transparent electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.